PHASE CONTROL THYRISTOR
b
AT804
Repetitive voltage up to
1600
V
Mean on-state current
985
A
Surge current
12.5
kA
FINAL SPECIFICATION
Feb 97 - ISSUE : 04
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
1600
V
V
RSM
Non-repetitive peak reverse voltage
125
1700
V
V
DRM
Repetitive peak off-state voltage
125
1600
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
50
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
50
mA
CONDUCTING
I
T (AV)
Mean on-state current
180 sin, 50 Hz, Th=55C, double side cooled
985
A
I
T (AV)
Mean on-state current
180 sin, 50 Hz, Tc=85C, double side cooled
770
A
I
TSM
Surge on-state current
sine wave, 10 ms
125
12.5
kA
I t
I t
without reverse voltage
781 x1E3
As
V
T
On-state voltage
On-state current =
1600 A
25
1.63
V
V
T(TO)
Threshold voltage
125
1.0
V
r
T
On-state slope resistance
125 0.380
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
From 75% VDRM up to 1050 A, gate 10V 5ohm 125
200
A/s
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
125
500
V/s
td
Gate controlled delay time, typical
VD=100V, gate source 25V, 10 ohm , tr=.5 s
25
1.1
s
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/s linear up to 75% VDRM
200
s
Q rr
Reverse recovery charge
di/dt=-20 A/s, I= 700 A
125
C
I rr
Peak reverse recovery current
VR= 50 V
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=5V, tp=30s
25
700
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3.5
V
I
GT
Gate trigger current
VD=5V
25
250
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0.25
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
5
V
P
GM
Peak gate power dissipation
Pulse width 100 s
150
W
P
G
Average gate power dissipation
2
W
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
37
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
7
C/kW
T
j
Operating junction temperature
-30 / 125
C
F
Mounting force
11.8 / 13.2
kN
Mass
300
g
ORDERING INFORMATION : AT804 S 16
standard specification
VDRM&VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
AT804 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION Feb 97 - ISSUE : 04
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
ON-STATE CHARACTERISTIC
Tj = 125 C
0
500
1000
1500
2000
2500
3000
0.6
1.1
1.6
2.1
2.6
On-state Voltage [V]
On-state Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 125 C
0
2
4
6
8
10
12
14
1
10
100
n cycles
ITSM [kA]
ANSALDO
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03
mm and roughness < 2 m.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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