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Электронный компонент: AT818

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PHASE CONTROL THYRISTOR
AT706
Repetitive voltage up to
800
V
Mean on-state current
4305
A
Surge current
70
kA
FINAL SPECIFICATION
feb 97 - ISSUE : 02
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
800
V
V
RSM
Non-repetitive peak reverse voltage
125
900
V
V
DRM
Repetitive peak off-state voltage
125
800
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
200
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
200
mA
CONDUCTING
I
T (AV)
Mean on-state current
180 sin, 50 Hz, Th=55C, double side cooled
4305
A
I
T (AV)
Mean on-state current
180 sin, 50 Hz, Tc=85C, double side cooled
3335
A
I
TSM
Surge on-state current
sine wave, 10 ms
125
70
kA
I t
I t
without reverse voltage
24500
x1E3
As
V
T
On-state voltage
On-state current =
10000
A
25
1.5
V
V
T(TO)
Threshold voltage
125
0.84
V
r
T
On-state slope resistance
125 0.060
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
From 75% VDRM up to 3100 A, gate 10V 5ohm 125
320
A/s
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
125
500
V/s
td
Gate controlled delay time, typical
VD=100V, gate source 10V, 10 ohm , tr=.5 s
25
3
s
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/s linear up to 75% VDRM
160
s
Q rr
Reverse recovery charge
di/dt=-20 A/s, I= 2050 A
125
C
I rr
Peak reverse recovery current
VR= 50 V
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=5V, tp=30s
25
700
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3.5
V
I
GT
Gate trigger current
VD=5V
25
250
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0.25
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
5
V
P
GM
Peak gate power dissipation
Pulse width 100 s
150
W
P
G
Average gate power dissipation
2
W
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
11
C/kW
R
th(c-h)
Thermal impedance
Case to heatsink, double side cooled
2
C/kW
T
j
Operating junction temperature
-30 / 125
C
F
Mounting force
40.0 / 50.0
kN
Mass
1700
g
ORDERING INFORMATION : AT706 S 08
standard specification
VDRM&VRRM/100
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
AT706 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 02
DISSIPATION CHARACTERISTICS
SQUARE WAVE
DC
180
120
90
60
30
0
1000
2000
3000
4000
5000
6000
7000
0
1000
2000
3000
4000
5000
6000
I
F(AV)
[A]
P
F(AV)
[W]
ANSALDO
DC
180
120
90
60
30
50
60
70
80
90
100
110
120
130
0
1000
2000
3000
4000
5000
6000
I
F(AV)
[A]
Th [C]
AT706 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 02
DISSIPATION CHARACTERISTICS
SINE WAVE
180
120
90
60
30
0
1000
2000
3000
4000
5000
6000
7000
0
1000
2000
3000
4000
5000
6000
I
F(AV)
[A]
P
F(AV)
[W]
ANSALDO
180
120
90
60
30
50
60
70
80
90
100
110
120
130
0
1000
2000
3000
4000
5000
6000
I
F(AV)
[A]
Th [C]
ANSALDO
AT706 PHASE CONTROL THYRISTOR
FINAL SPECIFICATION feb 97 - ISSUE : 02
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
ON-STATE CHARACTERISTIC
Tj = 125 C
0
2000
4000
6000
8000
10000
12000
14000
0.6
1
1.4
1.8
On-state Voltage [V]
On-state Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 125 C
0
10
20
30
40
50
60
70
1
10
100
n cycles
ITSM [kA]
ANSALDO
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03
mm and roughness < 2 m.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.