FAST SWITCHING THYRISTOR
ATF514
Repetitive voltage up to
1200
V
Mean on-state current
1100
A
Surge current
16
kA
TARGET SPECIFICATION
Turn-off time
20
s
mag 97 - ISSUE : 06
Symbol
Characteristic
Conditions
Tj
[C]
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
125
1200
V
V
RSM
Non-repetitive peak reverse voltage
125
1300
V
V
DRM
Repetitive peak off-state voltage
125
1200
V
I
RRM
Repetitive peak reverse current
V=VRRM
125
100
mA
I
DRM
Repetitive peak off-state current
V=VDRM
125
100
mA
CONDUCTING
I
T (AV)
Mean on-state current
180 sin, 50 Hz,Th=55C, double side cooled
1100
A
I
T (AV)
Mean on-state current
180 sin, 1 kHz,Th=55C, double side cooled
1025
A
I
TSM
Surge on-state current, non repetitive
sine wave, 10 ms
125
16
kA
I t
I t
without reverse voltage
1280 x1E3
As
V
T
On-state voltage
On-state current =
2000 A
25
2.5
V
V
T(TO)
Threshold voltage
125
1.50
V
r
T
On-state slope resistance
125 0.350
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current, min
From 75% VDRM up to 1200 A, gate 10V 5 ohm
125
500
A/s
dv/dt
Critical rate of rise of off-state voltage, min
Linear ramp up to 75% of VDRM
125
600
V/s
td
Gate controlled delay time, typical
VD=200V, gate source 20V, 10 ohm , tr=.5 s
25
0.85
s
tq
Circuit commutated turn-off time
di/dt =
60
A/s, I= 1000 A
I =
1000 A
125
20
s
dV/dt =
200 V/s , up to 80%
VDRM
Q rr
Reverse recovery charge
di/dt =
60
A/s, I= 1000 A
I =
1000 A
125
130
C
I rr
Peak reverse recovery current
VR =
50
V
105
A
I
H
Holding current, typical
VD=5V, gate open circuit
25
mA
I
L
Latching current, typical
VD=12V, tp=30s
25
mA
GATE
V
GT
Gate trigger voltage
VD=5V
25
3.5
V
I
GT
Gate trigger current
VD=5V
25
350
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0.25
V
V
FGM
Peak gate voltage (forward)
25
30
V
I
FGM
Peak gate current
25
10
A
V
RGM
Peak gate voltage (reverse)
25
5
V
P
GM
Peak gate power dissipation
Pulse width 100 s
25
150
W
P
G(AV)
Average gate power dissipation
25
3
W
MOUNTING
R
th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
26
C/kW
T
j
Operating junction temperature
-30 / 125
C
F
Mounting force
14.0 / 17.0
kN
Mass
500
g
tq code
D 10 s C 12 s B 15 s A 20 s L 25 s
ORDERING INFORMATION : ATF514 S 12 A
tq code
M 30 s N 35 s P 40 s R 45 s S 50 s
standard specification
VDRM&VRRM/100
T 60 s U 70 s W 80 s X 100s Y 150s
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
ATF514 FAST SWITCHING THYRISTOR
TARGET SPECIFICATION mag 97 - ISSUE : 06
SWITCHING CHARACTERISTICS
ANSALDO
REVERSE RECOVERY CURRENT
Tj = 125 C
0
200
400
600
0
50
100
150
200
250
300
350
di/dt [A/s]
Irr [A]
2000 A
1000 A
500 A
ta = Irr / (di/dt) tb = trr - ta
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr (Qrr - Irr ta / 2 )
di/dt
Irr
I
F
ta
tb
Vr
REVERSE RECOVERY CHARGE
Tj = 125 C
0
50
100
150
200
250
300
350
400
450
0
50
100
150
200
250
300
350
di/dt [A/s]
Qrr [C]
500 A
1000 A
2000 A
ATF514 FAST SWITCHING THYRISTOR
TARGET SPECIFICATION mag 97 - ISSUE : 06
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
ON-STATE CHARACTERISTIC
Tj = 125 C
0
500
1000
1500
2000
2500
3000
3500
0.6
1.1
1.6
2.1
2.6
On-state Voltage [V]
On-state Current [A]
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
0
5
10
15
20
25
30
35
0.001
0.01
0.1
1
10
100
t[s]
Zth j-h [C/kW]
SURGE CHARACTERISTIC
Tj = 125 C
0
2
4
6
8
10
12
14
16
1
10
100
n cycles
ITSM [kA]
ANSALDO
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 m.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
PDF 
ZIP