Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
I
T (RMS)
........................................................................ 3A
V
DRM
..............................................................400V/600V
I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 15mA (10mA)
V
2
BCR3AS
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V
1
Non-repetitive peak off-state voltage
V
1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360
conduction, T
c
=108
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
C
C
g
Ratings
3
30
3.7
3
0.3
6
0.3
40 ~ +125
40 ~ +125
0.26
V
1. Gate open.
6.5
5.00.2
2.3
2.3
0.9 MAX
1.0
5.50.2
2.3
10 MAX
0.50.1
0.50.2
0.8
1.50.2
1
.0 MAX
2
2
3
4
1
3
4
1
1
2
3
4
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
T
2
TERMINAL
TYPE
NAME
VOLTAGE
CLASS
2.3 MIN
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3
Feb.1999
5
0
1
2
3
4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
C
= 25C
10
0
2 3
5 7 10
1
2 3
5 7 10
2
4
4
30
35
20
25
10
15
5
40
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
V
2
Gate trigger current
V
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=4.5A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case
V
4
Unit
mA
V
V
V
V
mA
mA
mA
V
C/ W
V/
s
Typ.
--
--
--
--
--
--
--
--
--
--
--
!
@
#
!
@
#
V
2. High sensitivity (I
GT
10mA) is also available.
V
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V
4. Case temperature is measured on the T
2
terminal.
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Limits
Min.
--
--
--
--
--
--
--
--
0.2
--
V
3
Max.
2.0
1.7
1.5
1.5
1.5
15
V
2
15
V
2
15
V
2
--
3.8
--
PERFORMANCE CURVES
Test conditions
Voltage
class
8
12
V
DRM
(V)
400
600
Commutating voltage and current waveforms
(inductive load)
(dv/dt)
c
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
Min.
5
Unit
V/
s
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutating current
(di/dt)
c
=1.5A/ms
3. Peak off-state voltage
V
D
=400V
Feb.1999
10
0
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
V
GD
= 0.2V
P
G(AV)
= 0.3W
P
GM
= 3W
I
GM
=
0.5A
I
FGT I,
I
RGT III
I
RGT I
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
I
FGT I,
I
RGT I
I
RGT III
TYPICAL EXAMPLE
10
8
6
4
2
0
5
0
1
2
3
4
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
4.0
0
0.5
1.5
2.5
3.5
40
80
140
1.0
2.0
3.0
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= tC)
GATE TRIGGER CURRENT (T
j
= 25C)
100 (%)
GATE TRIGGER VOLTAGE
( T
j
= t
C
)
GATE TRIGGER VOLTAGE
( T
j
= 25
C
)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Feb.1999
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = xV/s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/s
)
160
100
80
40
20
0
140
40
40
60
20 0
20
60 80
140
100 120
60
120
TYPICAL EXAMPLE
140
40
40
60
20 0
20
60 80 100 120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
TYPICAL EXAMPLE
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
120
0
20
40
60
80
100
140
160
T
j
= 125C
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
160
120
100
60
20
0
1.6
0
0.2
0.6
1.0
1.4
40
80
140
0.4
0.8
1.2
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
140
60
20
20
60
100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
40
0
40
80
120
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
T
2
+
, G
+
T
2
, G
T
2
+
, G
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
100 (%)
HOLDING CURRENT
( T
j
= t
C
)
HOLDING CURRENT
( T
j
= 25
C
)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= t
C
)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= 25
C
)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
= 25
C
)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Feb.1999
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/s)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
10
1
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
4
4
4
4
I
RGT III
I
RGT I
I
FGT I
TYPICAL EXAMPLE
10
0
10
2
7
5
3
2
10
0
2 3
5 7 10
1
10
1
7
5
3
2
2 3
5 7 10
2
4
4
4
4
TYPICAL
EXAMPLE
T
j
= 125C
I
T
= 4A
= 500s
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
VOLTAGE WAVEFORM
CURRENT WAVEFORM
V
D
t
(dv/dt)
C
I
T
t
(di/dt)
C
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
PDF 
ZIP