1
Trench Gate Design
Dual IGBTMODTM
100 Amperes/1200 Volts
CM100DU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
1
Dimensions
Inches
Millimeters
A
3.70
94.0
B
1.89
48.0
C
1.18 +0.04/-0.02 30.0 +1.0/-0.5
D
3.15
0.01
80.0
0.25
E
0.43
11.0
F
0.16
4.0
G
0.71
18.0
H
0.02
0.5
Dimensions
Inches
Millimeters
J
0.53
13.5
K
0.91
23.0
L
1.13
28.7
M
0.67
17.0
N 0.28 7.0
P M5 M5
Q 0.26 Dia. 6.5 Dia.
R 0.16 4.0
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-24F is a
1200V (V
CES
), 100 Ampere Dual
IGBTMODTM Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
100
24
Q (2 PLACES)
CM
A
B
C
D
R
K
K
C2E1
E2
C1
H
M
N
E
F
G
F
J
L
E2
G2
G1
E1
C2E1
RTC
E2
E1
G1
C1
E2
G2
RTC
P - NUTS (3 PLACES)
TC MEASURING
POINT
2
CM100DU-24F
Trench Gate Design Dual IGBTMODTM
100 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM100DU-24F
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
100
Amperes
Peak Collector Current
I
CM
200*
Amperes
Emitter Current** (T
c
= 25
C)
I
E
100
Amperes
Peak Emitter Current**
I
EM
200*
Amperes
Maximum Collector Dissipation (T
c
= 25
C, T
j
150
C)
P
c
500
Watts
Mounting Torque, M5 Main Terminal
31
in-lb
Mounting Torque, M6 Mounting
40
in-lb
Weight
310
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V
20
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 10mA, V
CE
= 10V
5
6
7
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 100A, V
GE
= 15V, T
j
= 25
C
1.8
2.4
Volts
I
C
= 100A, V
GE
= 15V, T
j
= 125
C
1.9
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
1100
nC
Emitter-Collector Voltage**
V
EC
I
E
= 100A, V
GE
= 0V
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
3
CM100DU-24F
Trench Gate Design Dual IGBTMODTM
100 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
39
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
1.7
nf
Reverse Transfer Capacitance
C
res
1
nf
Inductive
Turn-on Delay Time
t
d(on)
V
CC
= 600V, I
C
= 100A,
100
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
50
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 3.1 ,
400
ns
Times
Fall Time
t
f
Inductive Load
300
ns
Diode Reverse Recovery Time**
t
rr
Switching Operation
150
ns
Diode Reverse Recovery Charge**
Q
rr
I
E
= 100A
4.1
C
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/2 Module, T
c
Reference
0.25
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/2 Module, T
c
Reference
0.35
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
'Q
Per IGBT 1/2 Module,
0.15
C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied 0.035
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
4
CM100DU-24F
Trench Gate Design Dual IGBTMODTM
100 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
16
12
8
4
0
1600
1200
800
400
V
CC
= 400V
V
CC
= 600V
I
C
= 100A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
0
10
1
10
2
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 125
C
Inductive Load
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 25
C
Inductive Load
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
0
1.0
2.0
3.0
4.0
10
0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
6
8
10
12
14
16
18
20
4
3
2
1
0
T
j
= 25
C
I
C
= 40A
I
C
= 200A
I
C
= 100A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
0
40
80
120
160
2
1
0
200
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
120
40
0
V
GE
= 20V
15
10
9
9.5
8
T
j
= 25
o
C
80
160
200
8.5
11
T
j
= 25
C
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
(NORMALIZED VALUE)
Per Unit Base
R
th(j-c)
= 0.25
C/W (IGBT)
R
th(j-c)
= 0.35
C/W (FWDi)
Single Pulse
T
C
= 25
C
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