1
Trench Gate Design
Six IGBTMODTM
100 Amperes/1200 Volts
CM100TJ-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
1
Dimensions
Inches
Millimeters
A
4.78
121.5
B
2.42
61.5
C
0.67
17.0
D
4.33
0.01
110.0
0.25
E
3.00
76.2
F
0.75
19.05
G
0.60
15.24
H
0.15
3.81
J
2.26
57.5
K
1.97
0.01
50.0
0.25
L
1.07
27.0
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TJ-24F is a
1200V (V
CES
), 100 Ampere Six-
IGBT IGBTMODTM Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
100
24
Dimensions
Inches
Millimeters
M
0.15
3.81
N
0.75
19.05
P
0.15
3.81
Q
3.00
76.2
R
0.60
15.24
S
0.45
1.15
T
0.04
1.0
U 0.22 Dia. 5.5 Dia.
V
0.12
3.0
W
0.81
20.5
X
3.72
94.5
Y
4.62
118.11
2
1
4
3
5 6
8
7
9
10
11 12
17
NOT
19
15
CONNECTED
CONNECTED
NOT
20
21
14
13
16
18
1
2
3
4
21
20
19
8
7
6
5
12
11
10
9
13
14
17
15
A
F
H
B
J
K
Q
P
R
D
L
C
T
S
N
G
U
Tc
Tc
V
X
Y
E
L
M
W
2
CM100TJ-24F
Trench Gate Design Six IGBTMODTM
100 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25 C unless otherwise specified
Ratings
Symbol
CM100TJ-24F
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
100
Amperes
Peak Collector Current (T
j
150
C)
I
CM
200*
Amperes
Emitter Current (T
c
= 25
C)**
I
E
100
Amperes
Peak Emitter Current**
I
EM
200*
Amperes
Maximum Collector Dissipation (T
j
< 150
C) (T
c
= 25
C)
P
c
390
Watts
Mounting Torque, M5 Mounting
31
in-lb
Weight
300
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25 C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V
20
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 10mA, V
CE
= 10V
5
6
7
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 100A, V
GE
= 15V, T
j
= 25
C
1.8
2.4
Volts
I
C
= 100A, V
GE
= 15V, T
j
= 125
C
1.9
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 100A, V
GE
= 15V
1100
nC
Emitter-Collector Voltage**
V
EC
I
E
= 100A, V
GE
= 0V
3.3
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
3
CM100TJ-24F
Trench Gate Design Six IGBTMODTM
100 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics,
T
j
= 25 C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
39
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V, f = 1MHz
1.7
nf
Reverse Transfer Capacitance
C
res
1.6
nf
Inductive
Turn-on Delay Time
t
d(on)
V
CC
= 600V,
100
ns
Load
Rise Time
t
r
I
C
= 100A,
50
ns
Switch
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V,
400
ns
Times
Fall Time
t
f
R
G
= 3.1 ,
300
ns
Diode Reverse Recovery Time**
t
rr
Inductive Load
150
ns
Diode Reverse Recovery Charge**
Q
rr
Switching Operation
4.1
C
Thermal and Mechanical Characteristics,
T
j
= 25 C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/6 Module, T
c
Reference
0.32
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/6 Module, T
c
Reference
0.36
C/W
Point per Outline drawing
Thermal Resistance, Junction to Case
R
th(j-c)
'Q
Per IGBT 1/6 Module,
0.18
C/W
T
c
Reference Point Under Chip
Thermal Resistance, Junction to Case
Rth(j-c)'D
Per FWDi 1/6 Module, T
c
Reference
0.20
C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.13
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
4
CM100TJ-24F
Trench Gate Design Six IGBTMODTM
100 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
16
12
8
4
0
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
3
10
2
10
1
10
0
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
10
1
0
1.0 3.0
2.0
4.0
10
0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
4
8
12
16
20
4
3
2
1
0
T
j
= 25
C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
2.5
0
40
120
160
2.0
1.5
1.0
0.5
0
200
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
V
GE
= 0V
C
ies
C
oes
C
res
500
1000
1500
V
CC
= 600V
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 125
C
Inductive Load
t
f
I
C
= 40A
I
C
= 200A
I
C
= 100A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
120
40
0
V
GE
= 20V
11
10
9.5
9
T
j
= 25
o
C
80
160
200
8.5
8
15
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
t
rr
I
rr
T
j
= 25
C
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
(NORMALIZED VALUE)
R
th(j-c)
= 0.32
C/W (IGBT)
Under Chip = 0.18
C/W
R
th(j-c)
= 0.36
C/W (FWDi)
Per Unit Base
Single Pulse
T
C
= 25
C
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 25
C
Inductive Load
V
CC
= 400V
80
I
C
= 100A
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