139
Chopper IGBTMODTM
U-Series Module
150 Amperes/1200 Volts
CM150E3U-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Description:
Powerex Chopper IGBTMODTM
Modules are designed for use in
switching applications. Each module
consists of one IGBT Transistor
having a reverse-connected super-
fast recovery free-wheel diode and
an anode-collector connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking base-
plate, offering simplified system
assembly and thermal management
.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
(15-20kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
DC Motor Control
Boost Regulator
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM150E3U-24H is a
1200V (V
CES
), 150 Ampere Chopper
IGBTMODTM Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
150
24
139
Dimensions
Inches
Millimeters
A
4.25
108.0
B
2.44
62.0
C
1.14 +0.04/-0.02 29.0 +1.0/-0.5
D
3.66
0.01
93.0
0.25
E
1.88
0.01
48.0
0.25
F
0.30
7.5
G
0.16
4.0
H
0.24
6.0
J
0.11
2.8
K
0.71
18.0
Dimensions
Inches
Millimeters
L
0.87
22.0
M
0.33
8.5
N
0.10
2.5
P
0.85
21.5
Q
0.98
25.0
R
0.16
4.0
S
M6
M6
T
0.26 Dia. 6.5 Dia.
U
0.02
0.5
C2E1
E2
C1
E2
G2
S - NUTS (3 TYP)
CM
T - (4 TYP.)
C2E1
E2
CL
C1
E2
G2
K
D
C
A
E
B
K
K
L
R
M
P
Q
Q
U
N
F
G
H
F
140
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
CM150E3U-24H
Chopper IGBTMODTM U-Series Module
150 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM150E3U-24H
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
150
Amperes
Peak Collector Current (T
j
150
C)
I
CM
300*
Amperes
Emitter Current** (T
c
= 25
C)
I
E
150
Amperes
Peak Emitter Current**
I
EM
300*
Amperes
Maximum Collector Dissipation (T
c
= 25
C, T
j
150
C)
P
c
890
Watts
Mounting Torque, M6 Main Terminal
40
in-lb
Mounting Torque, M6 Mounting
40
in-lb
Weight
400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
Gate Leakage Voltage
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 15mA, V
CE
= 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 150A, V
GE
= 15V, T
j
= 25
C
2.9
3.7
Volts
I
C
= 150A, V
GE
= 15V, T
j
= 125
C
2.85
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 150A, V
GE
= 15V
560
nC
Emitter-Collector Voltage**
V
EC
I
E
= 150A, V
GE
= 0V
3.2
Volts
Emitter-Collector Voltage
V
FM
I
F
= 150A, Clamp Diode Part
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
22
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
7.4
nf
Reverse Transfer Capacitance
C
res
4.4
nf
Resistive
Turn-on Delay Time
t
d(on)
V
CC
= 600V, I
C
= 150A,
200
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
250
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 2.1 , Resistive
300
ns
Times
Fall Time
t
f
Load Switching Operation
350
ns
Diode Reverse Recovery Time**
t
rr
I
E
= 150A, di
E
/dt = -300A/
s
300
ns
Diode Reverse Recovery Charge**
Q
rr
I
E
= 150A, di
E
/dt = -300A/
s
0.82
C
Diode Reverse Recovery Time
t
rr
I
F
= 150A, Clamp Diode Part
300
ns
Diode Reverse Recovery Charge
Q
rr
di
F
/dt = -300A/
s
0.82
C
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
140
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
CM150E3U-24H
Chopper IGBTMODTM U-Series Module
150 Amperes/1200 Volts
141
141
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
200
100
50
0
V
GE
= 20V
12
11
8
T
j
= 25
o
C
150
250
300
10
9
15
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
200
100
50
0
150
250
300
V
CE
= 10V
T
j
= 25
C
T
j
= 125
C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
50
100
150
250
200
4
3
2
1
0
300
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25
C
I
C
= 60A
I
C
= 300A
I
C
= 150A
1.0
1.5
2.0
2.5
3.0
3.5
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25
C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT
0.14
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi
0.24
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Clamp Diode Part
0.24
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.020
C/W
142
CM150E3U-24H
Chopper IGBTMODTM U-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
142
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.14
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.24
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
200
400
15
10
5
0
600
800
V
CC
= 600V
V
CC
= 400V
I
C
= 150A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
di/dt = -300A/
sec
T
j
= 25
C
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
3
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
=
15V
R
G
= 2.1
T
j
= 125
C
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
PDF 
ZIP