185
Single IGBTMODTM
H-Series Module
300 Amperes/1200 Volts
CM300HA-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.661
0.01
93.0
0.25
C
2.44
62.0
D
1.89
0.01
48.0
0.25
E
1.42 Max.
36.0 Max.
F
1.34
34.0
G
1.18
30.0
H
1.14
29.0
J
0.98 Max.
25.0 Max.
K
0.94
24.0
L
0.93
23.5
Dimensions
Inches
Millimeters
M
0.83
21.0
N
0.69
17.5
P
0.63
16.0
Q
0.51
13.0
R
0.43
11.0
S
0.35
9.0
T
0.28
7.0
U
0.12
3.0
V
0.26 Dia.
Dia. 6.5
W
M6 Metric
M6
X
M4 Metric
M4
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM300HA-24H is a 1200V
(V
CES
), 300 Ampere Single
IGBTMODTM Power Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
300
24
U
R
K
E
J
T
L
K
E
C
E
G
B
G
N
H
Q
D
F
A
P
S
C
M
T
W - M6 THD.
(2 TYP.)
X - M4 THD.
(2 TYP.)
V - DIA.
(4 TYP.)
186
CM300HA-24H
Single IGBTMODTM H-Series Module
300 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM300HA-24H
Units
Junction Temperature
T
j
40 to 150
C
Storage Temperature
T
stg
40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage
V
GES
20
Volts
Collector Current
I
C
300
Amperes
Peak Collector Current
I
CM
600*
Amperes
Diode Forward Current
I
F
300
Amperes
Diode Forward Surge Current
I
FM
600*
Amperes
Power Dissipation
P
d
2100
Watts
Max. Mounting Torque M6 Terminal Screws
26
in-lb
Max. Mounting Torque M6 Mounting Screws
26
in-lb
Module Weight (Typical)
400
Grams
V Isolation
V
RMS
2500
Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 30mA, V
CE
= 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 300A, V
GE
= 15V
2.5
3.4**
Volts
I
C
= 300A, V
GE
= 15V, T
j
= 150
C
2.25
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 300A, V
GS
= 15V
1500
nC
Diode Forward Voltage
V
FM
I
E
= 300A, V
GS
= 0V
3.4
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
60
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V, f = 1MHz
21
nF
Reverse Transfer Capacitance
C
res
12
nF
Resistive
Turn-on Delay Time
t
d(on)
250
ns
Load
Rise Time
t
r
V
CC
= 600V, I
C
= 300A
500
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 1.0
350
ns
Times
Fall Time
t
f
350
ns
Diode Reverse Recovery Time
t
rr
I
E
= 300A, di
E
/dt = 600A/
s
250
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 300A, di
E
/dt = 600A/
s
2.23
C
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.06
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
0.12
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.04
C/W
187
CM300HA-24H
Single IGBTMODTM H-Series Module
300 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
300
100
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
200
400
500
10
9
600
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
400
300
200
100
0
600
500
V
CE
= 10V
T
j
= 25C
T
j
= 125C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
100
200
300
500
4
3
2
1
0
600
V
GE
= 15V
T
j
= 25C
T
j
= 125C
400
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 120A
I
C
= 600A
I
C
= 300A
0
0.8
1.6
2.4
3.2
4.0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
di/dt = -600A/
sec
T
j
= 25C
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
400
800
1200 1600 2000
16
12
8
4
0
V
CC
= 400V
2400
V
CC
= 600V
I
C
= 300A
COLLECTOR CURRENT, I
C
, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= 15V
R
G
= 1
T
j
= 125C
t
f
t d
(on), t
r, t
d
(off), t
f
(ns)
188
CM300HA-24H
Single IGBTMODTM H-Series Module
300 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(
j
-
c
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.06
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(
j
-
c
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.12
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
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