1
Dual IGBTMODTM
F-Series Module
400 Amperes/1200 Volts
CM400DU-24F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
1
Description:
Powerex IGBTMODTM Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system
assembly and thermal
management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400DU-24F is a
1200V (V
CES
), 400 Ampere Dual
IGBTMODTM Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
400
24
T - (4 TYP.)
C2E1
E2
RTC
G1
C1
E1
E2
G2
CL
L
C
W -
(4 PLACES)
LABEL
A
F
G
H
J
K
L
M
N
P
Q
P
R
U
V
D
X
Y
Z
AA
TC MEASURED POINT
B
C E
S - (3 PLACES)
RTC
C2E1
E2
C1
E1
G1
E2
G2
Dimensions
Inches
Millimeters
A
5.51
140.0
B
5.12
130.0
C
5.12
130.0
D
1.38 +0/-0.02
35.0 +0/-0.5
E
4.33
0.01
110.0
0.25
F
4.33
0.01
110.0
0.25
G
0.39
10.0
H
0.45
11.5
J
0.54
13.8
K
1.72
43.8
L
1.42
36.0
M
0.39
10.0
N
0.80
20.4
Dimensions
Inches
Millimeters
P
0.57
14.5
Q
1.57
40.0
R
2.56
65.0
S
M8
M8
T
0.32
8.0
U
0.32
8.0
V
0.97 +0.04/-0.02 24.5 +1.0/-0.5
W
M4
M4
X
0.59
15.0
Y
0.35
9.0
Z
1.02
26.0
AA
0.79
20.0
Outline Drawing and Circuit Diagram
2
CM400DU-24F
Dual IGBTMODTM F-Series Module
400 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM400DU-24F
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
400
Amperes
Peak Collector Current
I
CM
800*
Amperes
Emitter Current** (T
c
= 25
C)
I
E
400
Amperes
Peak Emitter Current**
I
EM
800*
Amperes
Maximum Collector Dissipation (T
c
= 25
C, T
j
150
C)
P
c
1100
Watts
Mounting Torque, M8 Main Terminal
95
in-lb
Mounting Torque, M6 Mounting
40
in-lb
G(E) Terminal, M4
15
in-lb
Weight
1200
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
2
mA
Gate Leakage Voltage
I
GES
V
GE
= V
CES
, V
CE
= 0V
80
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 40mA, V
CE
= 10V
5.0
6
7.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 400A, V
GE
= 15V, T
j
= 25
C
1.8
2.4
Volts
I
C
= 400A, V
GE
= 15V, T
j
= 125
C
1.9
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 400A, V
GE
= 15V
4400
nC
Emitter-Collector Voltage**
V
EC
I
E
= 400A, V
GE
= 0V
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
3
CM400DU-24F
Dual IGBTMODTM F-Series Module
400 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
160
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
6.8
nf
Reverse Transfer Capacitance
C
res
4
nf
Resistive
Turn-on Delay Time
t
d(on)
V
CC
= 600V, I
C
= 400A,
450
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
200
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 3.1 ,
1000
ns
Times
Fall Time
t
f
Inductive Load
300
ns
Diode Reverse Recovery Time*
t
rr
Switching Operation
550
ns
Diode Reverse Recovery Charge*
Q
rr
I
E
= 400A
23.6
C
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/2 Module, T
c
Reference
0.11
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
R
Per FWDi 1/2 Module, T
c
Reference
0.13
C/W
Point per Outline Drawing
Thermal Resistance
R
th(j-c')
Q
Per IGBT 1/2 Module
0.045**
C/W
T
c
Reference Point Under Chips
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.010
C/W
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**If you use this value, R
th(f-a)
should be measured just under the chips.
4
CM400DU-24F
Dual IGBTMODTM F-Series Module
400 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
600
200
0
V
GE
= 20V
15
11
8
T
j
= 25
o
C
400
800
10
9
9.5
8.5
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
0
200
400
600
800
2.5
2.0
1.5
0.5
1.0
0
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
6
8
12
16
14
18
10
20
4
3
2
1
0
T
j
= 25
C
I
C
= 160A
I
C
= 800A
I
C
= 400A
0.5
0
1.0
1.5
2.0
2.5
3.5
3.0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25
C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
V
GE
= 0V
10
1
C
oes
C
res
C
ies
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
10
1
10
2
10
3
10
2
10
1
10
3
10
0
t
d(off)
t
d(on)
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 125
C
Inductive Load
t
r
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
1000
3000
2000
16
12
8
4
0
6000
5000
4000
V
CC
= 400V
I
C
= 400A
V
CC
= 600V
V
GE
=
15V
R
G
= 3.1
T
j
= 25
C
Inductive Load
V
CC
= 600V
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Per Unit Base
R
th(j-c)
= 0.11
C/W (IGBT)
R
th(j-c)
= 0.13
C/W (FWDi)
Single Pulse
T
C
= 25
C
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
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