1
Dual IGBTMODTM
NF-Series Module
400 Amperes/1200 Volts
CM400DY-24NF
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the heat
sinking baseplate, offering simpli-
fied system assembly and thermal
management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM400DY-24NF is a 1200V
(V
CES
), 400 Ampere Dual
IGBTMODTM Power Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
400
24
A
W
F
F
B
N
J
L
(4 PLACES)
D
M NUTS
(3 PLACES)
G
G
H
K
K
K
P
P
P
T THICK
U WIDTH
Q
Q
V
C
S
R
G2
E2
E1
G1
C1
E2
C2E1
TC MEASURED POINT
(BASEPLATE)
LABEL
C2E1
E2
C1
G2
E2
E1
G1
E
Dimensions
Inches
Millimeters
A
4.33
110.0
B
3.15
80.0
C 1.14+0.4/-0.002 29.0+1.0/-0.5
D
3.66
0.01
93.0
0.25
E
2.44
0.01
62.0
0.25
F
0.98
25.0
G
0.24
6.0
H
0.59
15.0
J
0.81
20.5
K
0.55
14.0
L
0.26 Dia.
Dia. 6.5
Dimensions
Inches
Millimeters
M
M6 Metric
M6
N
1.18
30.0
P
0.71
18.0
Q
0.28
7.0
R
0.83
21.2
S
0.33
8.5
T
0.02
0.5
U
0.110
2.8
V
0.16
4.0
W
0.85
21.5
2
CM400DY-24NF
Dual IGBTMODTM NF-Series Module
400 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM400DY-24NF
Units
Junction Temperature
T
j
40 to 150
C
Storage Temperature
T
stg
40 to 125
C
Collector-Emitter Voltage (G-E Short)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E Short)
V
GES
20
Volts
Collector Current (T
C
= 25
C)
I
C
400
Amperes
Peak Collector Current
I
CM
800*
Amperes
Emitter Current** (T
C
= 25
C)
I
E
400
Amperes
Peak Emitter Current**
I
EM
800*
Amperes
Maximum Collector Dissipation (T
C
= 25
C, T
j
150
C)
P
C
1470
Watts
Mounting Torque, M6 Main Terminal
--
40
in-lb
Mounting Torque, M6 Mounting
--
40
in-lb
Weight
--
580
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
ISO
2500
Volts
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
--
--
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
--
--
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 40mA, V
CE
= 10V
6.0
7.0
8.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 400A, V
GE
= 15V, T
j
= 25
C
--
1.8
2.5
Volts
I
C
= 400A, V
GE
= 15V, T
j
= 125
C
--
2.0
--
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 400A, V
GE
= 15V
--
2700
--
nC
Emitter-Collector Voltage**
V
EC
I
E
= 400A, V
GE
= 0V
--
--
3.2
Volts
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
--
--
94
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
--
--
8.0
nf
Reverse Transfer Capacitance
C
res
--
--
1.8
nf
Inductive
Turn-on Delay Time
t
d(on)
--
--
350
ns
Load
Rise Time
t
r
V
CC
= 600V, I
C
= 400A,
--
--
120
ns
Switch
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 0.73
,
--
--
550
ns
Time
Fall Time
t
f
Inductive Load
--
--
350
ns
Diode Reverse Recovery Time**
t
rr
Switching Operation,
--
--
250
ns
Diode Reverse Recovery Charge**
Q
rr
I
E
= 400A
--
20
--
C
*Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
3
CM400DY-24NF
Dual IGBTMODTM NF-Series Module
400 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/2 Module, T
C
Reference
--
--
0.085
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/2 Module, T
C
Reference
--
--
0.15
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
'Q
Per IGBT 1/2 Module,
--
--
0.034
C/W
T
C
Reference Point Under Chips
Contact Thermal Resistance
R
th(c-f)
Per 1/2 Module, Thermal Grease Applied
--
0.02
--
C/W
External Gate Resistance
R
G
0.73
--
7.3
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10
0
10
2
10
3
10
2
10
1
10
0
10
-1
10
1
0
1
3
4
2
5
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
3
0
200
600
2
1
0
800
V
GE
= 15V
T
j
= 25C
T
j
= 125C
V
GE
= 0V
C
ies
C
oes
C
res
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
200
0
V
GE
=
20V
10
11
12
15
13
9
T
j
= 25
o
C
400
600
800
400
10
-1
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
6
8
10
14
12
16
18
20
8
6
4
2
0
T
j
= 25C
I
C
= 800A
I
C
= 400A
I
C
= 160A
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
2
10
2
10
0
10
1
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= 15V
R
G
= 0.73
T
j
= 125C
Inductive Load
t
f
10
3
4
CM400DY-24NF
Dual IGBTMODTM NF-Series Module
400 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
0
10
-5
10
-4
10
-3
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
(NORMALIZED VALUE)
Single Pulse
T
C
= 25C
Per Unit Base =
R
th(j-c)
=
0.085C/W
(IGBT)
R
th(j-c)
=
0.15C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(
j
-c')
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
1000
2000
4000
3000
V
CC
= 600V
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
2
10
1
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
V
CC
= 600V
V
GE
= 15V
R
G
= 0.73
T
j
= 25C
Inductive Load
V
CC
= 400V
I
C
= 400A
10
3
I
rr
t
rr
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS, E
SW( on)
, E
SW( off)
, (mJ/PULSE)
10
2
10
1
10
2
10
1
10
0
V
CC
= 600V
V
GE
= 15V
R
G
= 0.73
T
j
= 125C
Inductive Load
C Snubber at Bus
V
CC
= 600V
V
GE
= 15V
I
C
= 400A
T
j
= 125C
Inductive Load
C Snubber at Bus
10
3
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
GATE RESISTANCE, R
G
, (
)
SWITCHING LOSS, E
SW( on)
, E
SW( off)
, (mJ/PULSE)
10
3
10
-1
10
0
10
2
10
1
10
1
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
E
SW(on)
E
SW(off)
E
SW(on)
E
SW(off)
PDF 
ZIP