369
Trench Gate Design
Single IGBTMODTM
600 Amperes/250 Volts
CM600HA-5F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.25
108.0
B
3.66
93.0
C
0.63
16.0
D
0.30
7.5
E
0.69
17.5
F
1.14
29.0
G
0.79
20.0
H
0.94
24.0
J
0.31
7.9
K
0.24
6.0
L
2.44
62.0
M
1.89
48.0
Dimensions
Inches
Millimeters
N
0.39
10.0
P
0.39
10.0
Q
0.51
13.0
R
0.33
8.5
S
1.42
36.0
T
1.02
25.8
U
M6 Metric
M6
V
M4 Metric
M4
W
0.22
5.5
X
0.79
20.0
Y
0.35
9.0
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration, with a reverse con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast
Recovery Free-Wheel
Diodes
High Frequency Operation
(20-25 kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
DC Chopper
Inverter
UPS
Forklift
Ordering Information:
Example: Select the complete
nine digit module part number you
desire from the table below - i.e.
CM600HA-5F is a 250V (V
CES
),
600 Ampere Single IGBTMODTM
Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
600
5
C
G
E
E
E
E
G
C
A
B
C
F
K
J
E
D
M
N
P
Q
R
S
U - THD.
(2 TYP.)
V -THD.
(2 TYP.)
W - DIA. (4 TYP.)
y
x
T
L
H
G
370
CM600HA-5F
Trench Gate Design Single IGBTMODTM
600 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
CM600HA-5F
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E Short)
V
CES
250
Volts
Gate-Emitter Voltage (C-E Short)
V
GES
20
Volts
Collector Current
I
C
600
Amperes
Peak Collector Current
I
CM
1200
Amperes
Diode Forward Current
I
F
600
Amperes
Diode Forward Surge Current
I
FM
1200
Amperes
Power Dissipation
P
d
960
Watts
Maximum Mounting Torque, M6 Terminal Screws
--
26
in-lb
Maximum Mounting Torque, M6 Mounting Screws
--
26
in-lb
Maximum Mounting Torque, M4 (G, E) Terminal Screws
--
13
in-lb
Module Weight (Typical)
--
400
Grams
Isolation Voltage, AC 1 minute, 60Hz
V
RMS
2500
Volts
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
--
--
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
--
--
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 60mA, V
CE
= 10V
3.0
4.0
5.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 600A, V
GE
= 10V,
--
1.2
1.7
Volts
I
C
= 600A, V
GE
= 10V, T
j
= 150
C
--
1.1
--
Volts
Total Gate Charge
Q
G
V
CC
= 50V, I
C
= 600A, V
GS
= 10V
--
2200
--
nC
Diode Forward Voltage
V
FM
I
E
= 600A, V
GS
= 0V
--
--
2.0
Volts
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
IES
--
--
165
nF
Output Capacitance
C
OES
V
GE
= 0V, V
CE
= 10V
--
--
7.5
nF
Reverse Transfer Capacitance
C
RES
--
--
5.6
nF
Resistive
Turn-on Delay Time
t
d(on)
--
--
1000
ns
Load
Rise Time
t
r
V
CC
= 50V, I
C
= 600A,
--
--
4000
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 10V, R
G
= 4.2
,
--
--
1000
ns
Times
Fall Time
t
F
Resistive Load
--
--
500
ns
Diode Reverse Recovery Time
t
rr
I
E
= 600A, di
E
/dt = -1200A/ms
--
--
300
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 600A, di
E
/dt = -1200A/ms
--
9.5
--
C
Thermal and Mechanical Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
--
--
0.13
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Free Wheel Diode
--
--
0.19
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
--
--
0.040
C/W
371
CM600HA-5F
Trench Gate Design Single IGBTMODTM
600 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
5
400
0
V
GE
= 15V
10
8
5.5
5.25
5.0
T
j
= 25
o
C
200
600
1200
1000
800
6
5.75
4.5
4.75
400
0
200
600
1200
1000
800
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
V
CE
= 10V
T
j
= 25C
T
j
= 125C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
0
400
600
1000
800
200
2.0
1.5
1.0
0.5
0
V
GE
= 15V
T
j
= 25C
T
j
= 125C
1200
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
5
10
15
4
3
2
1
0
T
j
= 25C
I
C
= 240A
I
C
= 1200A
I
C
= 600A
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
10
4
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
0
10
1
10
2
10
3
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
2
10
3
10
1
10
2
10
4
t
d(off)
t
d(on)
t
r
V
CC
= 100V
V
GE
= 10V
R
G
= 4.2
T
j
= 125C
t
f
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
di/dt = -1200A/
sec
T
j
= 25C
GATE CHARGE, Q
G
, (
C)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
0
1
2
3
20
15
10
5
0
4
5
V
CC
= 100V
V
CC
= 50V
IC = 600A
372
CM600HA-5F
Trench Gate Design Single IGBTMODTM
600 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-1
10
-2
10
0
10
1
10
-3
10
0
10
-1
10
-2
10
-3
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.13
C/W
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-1
10
0
10
1
10
-3
10
-2
10
0
10
-1
10
-2
10
-3
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.185
C/W
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