1
Single IGBTMODTM
HVIGBT
600 Amperes/4500 Volts
CM600HB-90H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.12
130.0
B
5.51
140.0
C
1.50
38.0
D
4.48
114.0
E
4.88
0.01
124.0
0.25
F
1.57
40.0
G
0.79
20.0
H
0.41
10.35
J
0.42
10.65
K
1.92
48.8
L
2.24
0.01
57.0
0.25
M
1.71
43.5
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor with a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
Low Drive Power
Low V
CE(sat)
Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
Traction
Medium Voltage Drives
High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM600HB-90H is a 4500V (V
CES
),
600 Ampere Single IGBTMODTM
Power Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
600
90
Dimensions
Inches
Millimeters
N
2.42
61.5
P
0.59
15.0
Q
1.57
40.0
R
0.20
5.2
S
1.16
29.5
T
1.10
28.0
U
M4 Metric
M4
V
M8 Metric
M8
W 0.28 Dia. Dia. 7.0
X
0.20
5.0
Y 0.71 18.0
W
(6 TYP)
U NUTS
(3 TYP)
T
Q
R
F
K
M
H
J
S
A
D
L
L
G
E
B
V NUTS
(4 TYP)
C
X
E
G
E
C
C
E
C
C
C
CM
E
G
E
C
E
P
N
Y
2
CM600HB-90H
Single IGBTMODTM HVIGBT
600 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM600HB-90H
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (V
GE
= 0V)
V
CES
4500
Volts
Gate-Emitter Voltage (V
CE
= 0V)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
600
Amperes
Peak Collector Current (Pulse)
I
CM
1200*
Amperes
Diode Forward Current** (T
c
= 25
C)
I
E
600
Amperes
Diode Forward Surge Current** (Pulse)
I
EM
1200*
Amperes
Maximum Collector Dissipation (T
c
= 25
C, IGBT Part, T
j
125
C)
P
C
6700
Watts
Max. Mounting Torque M8 Terminal Screws 115 in-lb
Max. Mounting Torque M6 Mounting Screws 53 in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws 17 in-lb
Module Weight (Typical)
1.5
kg
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
V
iso
6000
Volts
* Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
12.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 60mA, V
CE
= 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 600A, V
GE
= 15V, T
j
= 25
C
3.0
3.9*
Volts
I
C
= 600A, V
GE
= 15V, T
j
= 125
C
3.3
Volts
Total Gate Charge
Q
G
V
CC
= 2250V, I
C
= 600A, V
GE
= 15V 5.4
C
Emitter-Collector Voltage**
V
EC
I
E
= 600A, V
GE
= 0V
4.0
5.2
Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
3
CM600HB-90H
Single IGBTMODTM HVIGBT
600 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
108
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
8.0
nF
Reverse Transfer Capacitance
C
res
2.4
nF
Resistive
Turn-on Delay Time
t
d(on)
V
CC
= 2250V, I
C
= 600A,
2.4
s
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
2.4
s
Switching
Turn-off Delay Time
t
d(off)
R
G
= 15
6.0
s
Times
Fall Time
t
f
Resistive Load Switching Operation
1.2
s
Diode Reverse Recovery Time**
t
rr
I
E
= 600A, di
E
/dt = -1200A/
s
1.8
s
Diode Reverse Recovery Charge**
Q
rr
I
E
=600A, di
E
/dt = -1200A/
s
240*
C
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT
0.015
K/W
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi
0.030
K/W
Contact Thermal Resistance, Case to Fin
R
th(c-f)
Per Module, Thermal Grease Applied
0.010
K/W
4
CM600HB-90H
Single IGBTMODTM HVIGBT
600 Amperes/4500 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
0
1
2
3
4
6
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT, I
C
, (AMPERES)
TURN-ON SWITCHING ENERGY,
E
on
, (J/P)
HALF-BRIDGE TURN-ON SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
0
200
400
600
1200
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
6
5
0
500
1000
4
3
2
1
0
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
1500
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TURN-ON SWITCHING
SAFE OPERATING AREA (RBSOA)
(TYPICAL)
1400
0
1000
2000
3000
4000
5000
1200
800
1000
600
400
200
0
6
5
0
500
1000
4
3
2
1
0
T
j
= 25
C
T
j
= 125
C
1500
800
1000
0
200
400
600
800
1000 1200
5
V
CC
= 2250V
V
GE
=
15V
R
G
= 15
L
S
= 180nH
T
j
= 125
C
Inductive Load Integrated
Over Range of 10%
V
CC
= 3000V
V
GE
=
15V
R
G
= 15
L
S
= 100nH
T
j
= 125
C
0
0.5
1.5
2.5
3.0
COLLECTOR CURRENT, I
C
, (AMPERES)
TURN-OFF SWITCHING ENERGY,
E
off
, (J/P)
HALF-BRIDGE TURN-OFF SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
1.0
2.0
V
CC
= 2250V
V
GE
=
15V
R
G
= 15
L
S
= 180nH
T
j
= 125
C
Inductive Load Integrated
Over Range of 10%
0
0.1
0.3
0.5
0.6
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY ENERGY,
E
rec
, (J/P)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
0
200
400
800
1000
600
0.2
0.4
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
1500
0
1000
2000
3000
4000
1000
1250
750
250
500
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
0
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
1.2
10
-2
10
-3
10
-1
10
0
1.0
0.8
0.2
0.4
0.6
0
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.015 K/W
Z
th
= R
th
(NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
1.2
10
-2
10
-3
10
-1
10
0
1.0
0.8
0.2
0.4
0.6
0
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.030 K/W
Z
th
= R
th
(NORMALIZED VALUE)
EMITTER CURRENT, I
E
, (AMPERES)
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
V
CC
= 2250V
V
GE
=
15V
R
G
= 15
L
S
= 180nH
T
j
= 125
C
Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions
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