1
Trench Gate Design
Single IGBTMODTM
600 Amperes/600 Volts
CM600HU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
4.21
107.0
B
2.44
62.0
C
1.34 +0.04/-0.02 34.0 +1.0/-0.5
D
3.66
0.01
93.0
0.25
E
1.88
0.01
48.0
0.25
F
0.37
9.5
G
0.39
10.0
H
0.53
13.5
Dimensions
Inches
Millimeters
J
1.02
26.0
K
1.14
29.0
L 0.26 Dia .6.5 Dia.
M
M8
M8
N
M4
M4
P
0.49
12.55
Q
1.02 +0.04/-0.02 26.0 +1.0/-0.5
R
0.81
20.5
1
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM600HU-12F is a
600V (V
CES
), 600 Ampere Single
IGBTMODTM Power Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
600
12
A
D
Q
L (4 TYP)
CM
C
L
C
M (2 TYP.)
H
J
K
B
E
N (2 TYP)
C
E
G
E
F
G
P
R
G
E
E
C
RTC
TC MEASURING
POINT
2
CM600HU-12F
Trench Gate Design Single IGBTMODTM
600 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM600HU-12F
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
600
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
600
Amperes
Peak Collector Current (T
j
150
C)
I
CM
1200*
Amperes
Emitter Current** (T
c
= 25
C)
I
E
600
Amperes
Peak Emitter Current**
I
EM
1200*
Amperes
Maximum Collector Dissipation (T
c
= 25
C)
P
c
1420
Watts
Mounting Torque, M8 Main Terminal
95
in-lb
Mounting Torque, M6 Mounting
40
in-lb
Mounting Torque, M4 Terminal
15
in-lb
Weight
450
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
Gate Leakage Voltage
I
GES
V
GE
= V
CES
, V
CE
= 0V
80
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 60mA, V
CE
= 10V
5
6
7
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 600A, V
GE
= 15V, T
j
= 25
C
1.6
2.2
Volts
I
C
= 600A, V
GE
= 15V, T
j
= 125
C
1.6
Volts
Total Gate Charge
Q
G
V
CC
= 300V, I
C
= 600A, V
GE
= 15V
3720
nC
Emitter-Collector Voltage**
V
EC
I
E
= 600A, V
GE
= 0V
2.6
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
3
CM600HU-12F
Trench Gate Design Single IGBTMODTM
600 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
160
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
11
nf
Reverse Transfer Capacitance
C
res
6
nf
Inductive
Turn-on Delay Time
t
d(on)
V
CC
= 300V, I
C
= 600A,
600
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
400
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 3.1 ,
900
ns
Times
Fall Time
t
f
Inductive Load
250
ns
Diode Reverse Recovery Time**
t
rr
Switching Operation
300
ns
Diode Reverse Recovery Charge**
Q
rr
I
E
= 600A
11.7
C
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT, T
c
Reference
0.088
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi, T
c
Reference
0.12
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case
R
th(j-c)
'Q
Per IGBT,
0.04
C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.02
C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
4
CM600HU-12F
Trench Gate Design Single IGBTMODTM
600 Amperes/600 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
4
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
1000
16
12
8
4
0
2000
3000
4000
5000
V
CC
= 300V
V
CC
= 200V
I
C
= 600A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
V
GE
= 0V
10
1
C
ies
C
oes
0
1.0
2.0
3.0
4.0
10
1
10
3
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
4
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
6
8
12
10
18
16
14
20
4
3
2
1
0
T
j
= 25
C
I
C
= 240A
I
C
= 1200A
I
C
= 600A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
0
200
400
2
1
0
1200
800
1000
600
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
1
2
3
4
0
T
j
= 25
o
C
200
400
600
1200
800
1000
V
GE
= 20V
15
10
9.5
9
8.5
7.5
8
11
C
res
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
t
f
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
10
3
10
2
10
1
I
rr
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
(NORMALIZED VALUE)
Per Unit Base
R
th(j-c)
= 0.088
C/W (IGBT)
R
th(j-c)
= 0.12
C/W (FWDi)
Single Pulse
T
C
= 25
C
T
j
= 25
C
V
CC
= 300V
V
GE
=
15V
R
G
= 3.1
T
j
= 125
C
Inductive Load
EMITTER CURRENT, I
E
, (AMPERES)
V
CC
= 300V
V
GE
=
15V
R
G
= 3.1
T
j
= 25
C
Inductive Load
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