197
Single IGBTMODTM
H-Series Module
800 Amperes/1200 Volts
CM800HA-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.12
130.0
B
4.33
0.01
110.0
0.25
C
1.840
46.75
D
1.73
0.04/0.02 44.0
1.0/0.5
E
1.46
0.04/0.02 37.0
1.0/0.5
F
1.42
36.0
G
1.25
31.8
H
1.18
30.0
J
1.10
28.0
K
1.08
27.5
Description:
Powerex IGBTMODTM Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
High Frequency Operation
(20-25kHz)
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Laser Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM800HA-24H is a 1200V (V
CES
),
800 Ampere Single IGBTMODTM
Power Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
800
24
Dimensions
Inches
Millimeters
L
0.79
20.0
M
0.77
19.5
N
0.75
19.0
P
0.61
15.6
Q
0.51
13.0
R
0.35
9.0
S
M8 Metric
M8
T
0.26 Dia.
Dia. 6.5
U
M4 Metric
M4
D
E
E
C
E
G
H
K
R
A
B
B
A
N
F
L
M
C
J
G
P
Q
C
U - M4 THD
(2 TYP.)
S - M8 THD
(2 TYP.)
T - DIA.
(4 TYP.)
E
G
E
198
CM800HA-24H
Single IGBTMODTM H-Series Module
800 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25
C unless otherwise specified
Ratings Symbol CM800HA-24H Units
Junction Temperature T
j
40 to +150
C
Storage Temperature T
stg
40 to +125
C
Collector-Emitter Voltage (G-E SHORT) V
CES
1200 Volts
Gate-Emitter Voltage V
GES
20 Volts
Collector Current I
C
800 Amperes
Peak Collector Current I
CM
1600* Amperes
Diode Forward Current I
F
800 Amperes
Diode Forward Surge Current I
FM
1600* Amperes
Power Dissipation P
d
4800 Watts
Max. Mounting Torque M8 Terminal Screws 95 in-lb
Max. Mounting Torque M6 Mounting Screws 26 in-lb
Max. Mounting Torque M4 G-E Terminal Screws 13 in-lb
Module Weight (Typical) 1600 Grams
V Isolation V
RMS
2500 Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V 5.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V 0.5
A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 80mA, V
CE
= 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 800A, V
GE
= 15V 2.7 3.6 Volts
I
C
= 800A, V
GE
= 15V, T
j
= 150
C 2.4 Volts
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 800A, V
GS
= 15V 4500 nC
Diode Forward Voltage V
FM
I
E
= 800A, V
GS
= 0V 3.5 Volts
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
180 nF
Output Capacitance C
oes
V
GE
= 0V, V
CE
= 10V, f = 1MHz 64 nF
Reverse Transfer Capacitance C
res
36
nF
Resistive Turn-on Delay Time t
d(on)
500 ns
Load Rise Time t
r
V
CC
= 600V, I
C
= 800A, 1200 ns
Switching Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 4.2
1000 ns
Times Fall Time t
f
350
ns
Diode Reverse Recovery Time t
rr
I
E
= 800A, di
E
/dt = 1600A/
s
250
ns
Diode Reverse Recovery Charge Q
rr
I
E
= 800A, di
E
/dt = 1600A/
s
5.9
C
Thermal and Mechanical Characteristics,
T
j
= 25
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Per IGBT 0.026
C/W
Thermal Resistance, Junction to Case R
th(j-c)
Per FWDi 0.058
C/W
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied 0.018
C/W
199
CM800HA-24H
Single IGBTMODTM H-Series Module
800 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
1200
400
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
800
1600
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
0
1200
400
800
1600
V
CE
= 10V
T
j
= 25
C
T
j
= 125
C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
400
800
1200
4
3
2
1
0
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
1600
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25
C
I
C
= 320A
I
C
= 1600A
I
C
= 800A
0
0.8
1.6
2.4
3.2
4.0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
4
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25
C
10
3
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
COLLECTOR CURRENT I
C
, (AMPERES)
SWITCHING
TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
4
10
1
10
2
10
3
10
2
10
1
t
r
t
d(off)
V
CC
= 600V
V
GE
=
15V
R
G
= 4.2
T
j
= 125
C
t
d(on)
t
f
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
3
10
2
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
di/dt = -1600A/
sec
T
j
= 25
C
GATE CHARGE, Q
G
, (
C)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
1
2
3
4
5
16
12
8
4
0
I
C
= 800A
6
V
CC
= 600V
V
CC
= 400V
200
CM800HA-24H
Single IGBTMODTM H-Series Module
800 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.026
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.058
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
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