Feb.1999
FK20SM-9
V
DSS ................................................................................
450V
r
DS (ON) (MAX) ..............................................................
0.30
I
D .........................................................................................
20A
Integrated Fast Recovery Diode (MAX.) ........ 150ns
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
P
D
T
ch
T
stg
--
450
30
20
60
20
60
275
55 ~ +150
55 ~ +150
4.8
V
V
A
A
A
A
W
C
C
g
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Typical value
MAXIMUM RATINGS
(Tc = 25
C)
OUTLINE DRAWING
Dimensions in mm
TO-3P
MITSUBISHI Nch POWER MOSFET
FK20SM-9
HIGH-SPEED SWITCHING USE
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
Parameter
Conditions
Symbol
Ratings
Unit
15.9MAX.
4.5
1.5
3.2
5.0
20.0
19.5MIN.
2
1.0
5.45
4.4
0.6
2.8
q
w
e
5.45
2
4
4
r
w r
q
e
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
Feb.1999
450
30
--
--
2
--
--
7.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3
0.23
2.30
10.0
2800
350
55
60
80
270
80
1.5
--
--
--
--
10
1
4
0.30
3.00
--
--
--
--
--
--
--
--
2.0
0.45
150
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
I
D
= 1mA, V
GS
= 0V
I
G
=
100
A, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
V
DS
= 450V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 10A, V
GS
= 10V
I
D
= 10A, V
GS
= 10V
I
D
= 10A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 10A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 10A, V
GS
= 0V
Channel to case
I
S
= 20A, d
is
/d
t
= 100A/
s
MITSUBISHI Nch POWER MOSFET
FK20SM-9
HIGH-SPEED SWITCHING USE
V
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
300
0
200
150
100
50
0
250
200
150
100
50
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
2 3 5 7 10
1
2 3 5 7 10
2
10
0
2 3 5 7 10
3
tw=100s
1ms
100ms
DC
T
C
= 25C
Single Pulse
10ms
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20SM-9
HIGH-SPEED SWITCHING USE
40
32
24
16
8
0
0
4
8
12
16
20
T
C
= 25C
V
DS
= 50V
Pulse Test
10
2
7
5
3
2
10
0
10
0
2 3
5 7 10
1
10
1
7
5
3
2
2 3
5 7 10
2
T
C
= 25C
125C
75C
V
DS
= 10V
Pulse Test
40
32
24
16
8
0
0
4
8
12
16
20
I
D
= 40A
T
C
= 25C
Pulse Test
20A
10A
0
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
1.0
0.8
0.6
0.4
0.2
T
C
= 25C
Pulse Test
V
GS
= 10V
20V
20
16
12
8
4
0
0
4
8
12
16
20
P
D
= 275W
T
C
= 25C
Pulse Test
V
GS
=20V 10V
5V
4V
50
40
30
20
10
0
0
10
20
30
40
50
P
D
= 275W
T
C
= 25C
Pulse Test
V
GS
= 20V
10V
5V
4V
6V
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20SM-9
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
20
16
12
8
4
0
0
40
80
120
160
200
200V
400V
V
DS
= 100V
Tch = 25C
I
D
= 20A
2 3 5 7 10
1
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
2 3 5 7 10
2
2 3 5 7 10
0
2 3
Tch = 25C
f = 1MHz
V
GS
= 0V
Ciss
Coss
Crss
2 3
5 7 10
1
10
3
7
5
3
2
10
2
7
5
3
2
2 3
5 7 10
2
10
0
10
1
Tch = 25C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
t
d(off)
t
r
t
d(on)
10
0
7
5
3
2
10
1
0
10
1
7
5
3
2
50
100
150
200
250
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
50
40
30
20
10
0
0
0.8
1.6
2.4
3.2
4.0
T
C
= 125C
25C
75C
V
GS
= 0V
Pulse Test
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(tC)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25C)
CHANNEL TEMPERATURE Tch (C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20SM-9
HIGH-SPEED SWITCHING USE
1.4
1.2
1.0
0.8
0.6
0.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
4
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
2 3 57
2 3 57
2 3 57
2 3 5710
0
2 3 5710
1
2 3 5710
2
10
3
10
2
10
1
10
2
P
DM
tw
D=
T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
10
1
10
2
7
5
3
2
10
1
7
5
3
2
10
0
d
is/
d
t
= 100A /
s
V
GS
= 0V
V
DD
= 250V
T
ch
= 25C
T
ch
= 150C
I
rr
t
rr
5
3
2
10
1
2 3
5 7 10
2
10
2
7
5
3
2
2 3
5 7 10
3
10
1
3
2
10
1
7
5
5
7
5
7
5
3
2
10
0
I
S
= 20A
V
GS
= 0V
V
DD
= 250V
I
rr
t
rr
T
ch
= 25C
T
ch
= 150C
CHANNEL TEMPERATURE Tch (C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(tC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25C)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY CURRENT I
rr
(A)
SOURCE CURRENT I
S
(A)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
SOURCE CURRENT d
is
/d
t
(A/
s)
DIODE REVERSE VS.
SOURCE CURRENT d
is
/d
t
CHARACTERISTIC
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
hc
)
(C/
W)
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