PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
FS12UMA-5A
OUTLINE DRAWING
Dimensions in mm
TO-220
MITSUBISHI Nch POWER MOSFET
FS12UMA-5A
HIGH-SPEED SWITCHING USE
APPLICATION
C
S
Switch for CRT Display monitor
250
20
12
36
12
65
55 ~ +150
55 ~ +150
2.0
V
GS
= 0V
V
DS
= 0V
L = 200
H
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
W
C
C
g
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
T
ch
T
stg
--
Symbol
MAXIMUM RATINGS
(Tc = 25C)
Parameter
Conditions
Ratings
Unit
q
10V DRIVE
q
V
DSS ...............................................................................
250V
q
r
DS (ON) (MAX) .............................................................
0.40
q
I
D .........................................................................................
12A
10.5MAX.
4.5
1.3
3.6
3.2
16
12.5MIN.
3.8MAX.
1.0
0.8
2.54
2.54
4.5MAX.
0.5
2.6
7.0
GATE
DRAIN
SOURCE
DRAIN
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Sep.1998
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
MITSUBISHI Nch POWER MOSFET
FS12UMA-5A
HIGH-SPEED SWITCHING USE
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
250
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3.0
0.27
1.62
11.0
1200
120
30
20
30
190
45
0.95
--
--
10
1
4.0
0.40
2.40
--
--
--
--
--
--
--
--
--
1.92
ELECTRICAL CHARACTERISTICS
(Tch = 25C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= 250V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 6A, V
GS
= 10V
I
D
= 6A, V
GS
= 10V
I
D
= 6A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 150V, I
D
= 6A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 6A, V
GS
= 0V
Channel to case
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