Feb.1999
V
GS
= 0V
V
DS
= 0V
AC for 1minute, Terminal to case
Typical value
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
V
DSS ..............................................................................
250V
r
DS (ON) (MAX) ..............................................................
1.3
I
D ..........................................................................................
5A
V
iso ..............................................................................
2000V
250
30
5
15
30
55 ~ +150
55 ~ +150
2000
2.0
V
V
A
A
W
C
C
Vrms
g
FS5KM-5
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
V
iso
--
OUTLINE DRAWING
Dimensions in mm
TO-220FN
MITSUBISHI Nch POWER MOSFET
FS5KM-5
HIGH-SPEED SWITCHING USE
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
MAXIMUM RATINGS
(Tc = 25
C)
Parameter
Conditions
Ratings
Unit
w
q
e
15 0.3
14 0.5
10 0.3
2.8 0.2
3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
2.54 0.25
2.54 0.25
2.6 0.2
4.5 0.2
0.75 0.15
3 0.3
3.6 0.3
6.5 0.3
1 2 3
q
GATE
w
DRAIN
e
SOURCE
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5KM-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
I
D
= 1mA, V
GS
= 0V
I
G
=
100
A, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
V
DS
= 250V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 2A, V
GS
= 10V
I
D
= 2A, V
GS
= 10V
I
D
= 2A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 150V, I
D
= 2A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 2A, V
GS
= 0V
Channel to case
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
250
30
--
--
2
--
--
1.6
--
--
--
--
--
--
--
--
--
--
--
--
--
3
1.0
2.0
2.5
270
55
10
11
13
32
22
1.5
--
--
--
10
1
4
1.3
2.6
--
--
--
--
--
--
--
--
2.0
4.17
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
5
3
2
2
T
C
= 25C
Single Pulse
tw=10s
100s
1ms
10ms
DC
50
40
30
20
10
0
200
150
100
50
0
5
4
3
2
1
0
0
4
8
12
16
20
P
D
=
30W
T
C
= 25C
Pulse Test
V
GS
=20V
10V
6V
5V
5.5V
4V
4.5V
10
8
6
4
2
0
0
10
20
30
40
50
P
D
=
30W
T
C
= 25C
Pulse Test
V
GS
= 20V
10V
6V
5V
7V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
40
32
24
16
8
0
0
4
8
12
16
20
I
D
= 10A
T
C
= 25C
Pulse Test
8A
5A
3A
10
8
6
4
2
0
0
4
8
12
16
20
T
C
= 25C
V
DS
= 50V
Pulse Test
10
1
7
5
3
2
10
1
10
1
2 3
5 7 10
0
10
0
7
5
3
2
2 3
5 7 10
1
T
C
= 25C
V
DS
= 10V
Pulse Test
125C
75C
2 3
5 7 10
0
10
2
7
5
3
2
10
1
7
5
3
2
2 3
5 7 10
1
10
1
3
2
10
0
Tch = 25C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
t
d(off)
t
r
t
d(on)
0
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
5
4
3
2
1
T
C
= 25C
Pulse Test
V
GS
= 10V
20V
10
2
7
5
3
2
10
1
7
5
3
2
5
3
2
2 3 5 7 10
2
2 3 5 7 10
1
2 3 5 7 10
0
2 3
Tch
= 25C
f = 1MHz
V
GS
= 0V
Ciss
Coss
Crss
7
10
3
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
MITSUBISHI Nch POWER MOSFET
FS5KM-5
HIGH-SPEED SWITCHING USE
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5KM-5
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
1.4
1.2
1.0
0.8
0.6
0.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
0
7
5
3
2
10
1
50
10
1
7
5
3
2
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
20
16
12
8
4
0
0
4
8
12
16
20
V
DS
= 50V
200V
Tch
= 25C
I
D
= 5A
100V
20
16
12
8
4
0
0
0.8
1.6
2.4
3.2
4.0
T
C
= 125C
25C
75C
V
GS
= 0V
Pulse Test
10
4
10
1
7
5
3
2
10
0
7
5
3
2
10
1
7
5
3
2
2 3 57
2 3 57
2 3 57
2 3 5710
0
2 3 5710
1
2 3 5710
2
10
3
10
2
10
1
10
2
P
DM
tw
D=
T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(tC)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
hc
)
(C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(tC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25C)
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