PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
FX6ASJ-2
OUTLINE DRAWING
Dimensions in mm
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
100
20
6
24
6
6
24
30
55 ~ +150
55 ~ +150
0.26
V
GS
= 0V
V
DS
= 0V
L = 100
H
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
V
A
A
A
A
A
W
C
C
g
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
--
Symbol
MAXIMUM RATINGS
(Tc = 25C)
Parameter
Conditions
Ratings
Unit
4V DRIVE
V
DSS
............................................................. 100V
r
DS (ON) (MAX)
................................................ 0.58
I
D
...................................................................... 6A
Integrated Fast Recovery Diode (TYP.) ........... 80ns
6.5
2.3
2.3
0.9 max
1
.0 max
2.3
1.0
0.5 0.1
5.5
0.2
10 max
2.3 min
1.5
0.2
1
1
1
2
2
2
3
3
3
0.5 0.2
0.8
5.0 0.2
A
GATE
DRAIN
SOURCE
DRAIN
4
4
4
MITSUBISHI Pch POWER MOSFET
FX6ASJ-2
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
ns
100
--
--
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
1.5
0.46
0.55
1.38
4.7
1110
108
44
9
8
72
33
1.0
--
80
--
0.1
0.1
2.0
0.58
0.72
1.74
--
--
--
--
--
--
--
--
1.5
4.17
--
ELECTRICAL CHARACTERISTICS
(Tch = 25C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= 100V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 3A, V
GS
= 10V
I
D
= 3A, V
GS
= 4V
I
D
= 3A, V
GS
= 10V
I
D
= 3A, V
DS
= 5V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 50V, I
D
= 3A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 3A, V
GS
= 0V
Channel to case
I
S
= 6A, dis/dt = 100A/
s
PERFORMANCE CURVES
0
8
16
24
32
40
0
200
50
100
150
0
2
4
6
8
10
0
4
8
12
16
20
P
D
= 30W
V
GS
=
10V
Tc = 25C
Pulse Test
5V
2.5V
3V
3.5V
4V
0
1.0
2.0
3.0
4.0
5.0
0
2
4
6
8
10
4V
3V
2.5V
5V
10V
V
GS
=
10
1
5
7
10
0
2
3
5
7
10
0
2
10
1
3 5 7
2
10
2
3 5 7
2
3
10
1
2
3
5
7
5
2 3 5 7
2
tw =
T
C
= 25C
Single Pulse
100
s
10ms
1ms
DC
3.5V
10
s
P
D
= 30W
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
MITSUBISHI Pch POWER MOSFET
FX6ASJ-2
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
10
1
7
10
0
2 3 45 7
2 3 45 7
10
1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
25C
T
C
=
75C
125C
V
DS
= 5V
Pulse Test
0
4
8
12
16
20
0
2
4
6
8
10
Tc = 25C
V
DS
= 10V
Pulse Test
0
4
8
12
16
20
0
2
4
6
8
10
I
D
=
6A
3A
12A
Tc = 25C
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
10
1
10
0
2 3 5 7
10
1
2 3 57
10
2
2 3 57
10
1
7
2 3
5 7
10
0
2 3
5 7
10
1
10
2
2
3
5
7
2
3
5
5
7
Tch = 25C
V
GS
= 10V
V
DD
= 50V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
r
t
f
10
0
3 57
2
10
1
3 57
2
10
2
3 57
2 3
10
2
2
3
4
5
7
10
3
2
3
4
5
7
2
Ciss
Crss
Coss
Tch = 25C
f = 1MH
Z
V
GS
= 0V
4V
V
GS
=
Tc = 25C
Pulse Test
10V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
MITSUBISHI Pch POWER MOSFET
FX6ASJ-2
HIGH-SPEED SWITCHING USE
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
10
1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
50
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
0
0.8
1.6
2.4
3.2
4.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
4
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
2
10
1
P
DM
tw
D
=
T
tw
T
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0
2
4
6
8
10
0
4
8
12
16
20
20V
V
DS
=
50V
80V
Tch = 25C
I
D
= 6A
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
T
C
=
75C
25C
V
GS
= 0V
Pulse Test
125C
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(tC)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(
c
hc
)
(C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(tC)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25C)
MITSUBISHI Pch POWER MOSFET
FX6ASJ-2
HIGH-SPEED SWITCHING USE
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