Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54580P and M54580FP are seven-circuit output-sourcing
Darlington transistor arrays. The circuits are made of PNP
and NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
High breakdown voltage (BV
CEO
50V)
High-current driving (Io(max) = 150mA)
Active L-level input
With input diodes
Wide operating temperature range (Ta = 20 to +75
C)
APPLICATION
Drives of relays, printers and indication elements such as
LEDs, fluorescent display tubes and lamps, and interfaces
between MOS-bipolar logic systems and relays, solenoids,
or small motors
FUNCTION
The M54580P and M54580FP each have seven circuits,
which are made of output current-sourcing Darlington tran-
sistors consisting of PNP and NPN transistors. Each PNP
transistor has a diode and resistance of 7k
between the
base and input pin. Its emitter and NPN transistor collectors
are connected to the V
S
pin (pin 9). Resistance of 50k
is
connected between each output pin and GND pin (pin 8).
Output current is 150mA maximum. Supply voltage V
S
is 50V
maximum.
The M54580FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 20 ~ +75
C)
V
CEO
V
S
V
I
I
O
P
d
T
opr
T
stg
0.5 ~ +50
50
0.5 ~ V
S
150
1.47(P)/1.00(FP)
20 ~ +75
55 ~ +125
V
V
V
mA
W
C
C
Ratings
Unit
Symbol
Parameter
Conditions
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Output, L
Current per circuit output, H
Ta = 25
C, when mounted on board
1
IN1
IN2
IN3
IN4
IN5
IN6
IN7
V
S
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
O7
O6
O5
O4
O3
O2
O1
16P4(P)
Package type 16P2N-A(FP)
INPUT
OUTPUT
30K
50K
7K
7K
GND
V
S
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the V
S
and GND.
POWEREX
Aug. 1999
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
V
(BR) CEO
I
R
h
FE
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = 20 ~ +75
C)
50
V
S
V
S
3.2
4
V
S
0.4
0
I
O
--
--
--
V
A
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
+
max
V
V
V
50
--
--
--
--
--
800
--
0.9
0.8
0.3
0.65
--
3000
--
1.5
1.2
0.6
0.95
100
--
0
0
--
--
100
50
mA
V
mA
+
: The typical values are those measured under ambient temperature (Ta) of 25
C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
t
on
t
off
--
--
200
7500
--
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
S
V
IH
V
IL
Parameter
Limits
Symbol
Unit
min
typ
max
Duty Cycle
P : no more than 85%
FP : no more than 50%
Duty Cycle
P : no more than 100%
FP : no more than 100%
"H" input voltage
"L" input voltage
Supply voltage
O u t p u t c u r r e n t
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 20 ~ +75
C)
I
CEO
= 100
A
V
I
= V
S
3.2V, I
O
= 100mA
V
I
= V
S
3.2V, I
O
= 50mA
V
I
= V
S
3.5V
V
I
= V
S
6V
V
I
= 40V
V
CE
= 4V, V
S
= 10V, I
C
= 100mA, Ta = 25
C
Collector-emitter breakdown voltage
Clamping diode reverse current
DC amplification factor
V
CE (sat)
I
I
Collector-emitter saturation voltage
Input current
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
C
L
= 15pF (note 1)
Turn-on time
Turn-off time
PG
50
C
L
R
L
V
S
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Z
O
= 50
V
I
= 0.8 to 4V
(2) Input-output conditions : R
L
= 40
, , V
S
= 4V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Measured device
ton
50%
50%
50%
50%
toff
INPUT
OUTPUT
POWEREX
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 75C
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 75C
Duty-Cycle-Output Current Characteristics
(M54580P)
Duty cycle (%)
Output current I
O
(mA)
0
0
20
40
60
80
100
Duty cycle (%)
to
to
Output current I
O
(mA)
Duty-Cycle-Output Current Characteristics
(M54580P)
0
80
40
120
160
200
to
80
40
120
160
200
80
40
120
160
200
0
20
40
60
80
100
Duty cycle (%)
to
Output current I
O
(mA)
Duty-Cycle-Output Current Characteristics
(M54580FP)
0
0
20
40
60
80
100
Duty-Cycle-Output Current Characteristics
(M54580FP)
Duty cycle (%)
Output current I
O
(mA)
0
0
20
40
60
80
100
Thermal Derating Factor Characteristics
Ambient temperature Ta (C)
M54580FP
M54580P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25
50
75
100
Output Saturation Voltage
Output Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
100
50
150
200
0
0.5
1.0
1.5
2.0
Output current I
O
(mA)
V
S
= 10V
V
I
= 6.8V
Ta = 75C
Ta = 20C
Ta = 25C
80
40
120
160
200
POWEREX
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54580P/FP
7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
DC Amplification Factor
Output Current Characteristics
Output current I
O
(mA)
10
1
10
3
V
S
= 10V
V
CE
= 4V
Ta = 25C
Ta = 75C
Ta = 20C
5
3
2
7
5
3
2
7
10
4
10
3
10
2
2
3
5 7
2
3
5
7
10
2
DC amplification factor h
FE
Grounded Emitter Transfer Characteristics
Supply voltage-Input voltage V
S
V
I
(V)
Supply voltage-Input voltage V
S
V
I
(V)
0
100
50
150
200
0
1.0
2.0
3.0
4.0
Output current I
O
(mA)
V
S
= 10V
V
CE
= 4V
Ta = 75C
Ta = 20C
Ta = 25C
Input Characteristics
0
5
0
5
10
15
20
Input current I
I
(mA)
V
S
= 20V
Ta = 75C
Ta = 20C
Ta = 25C
4
3
2
1
POWEREX
PDF 
ZIP