ChipFind - документация

Электронный компонент: M63802P

Скачать:  PDF   ZIP
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
Unit:
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
10.5k
10k
Vz=7V
16P4(P)
16P2N-A(FP)
16P2S-A(GP)
16P2Z-A(KP)
IN7
7
10
IN5
5
12
INPUT
OUTPUT
IN4
4
13
IN3
3
IN2
2
15
1
IN1
16
GND
NC
9
8
IN6
6
11
NC : No connection
O1
O2
O3
O4
O5
O6
O7
14
Package type
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
PIN CONFIGURATION
DESCRIPTION
M63802P, M63802FP, M63802GP and M63802KP are
seven-circuit Singe transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
q
Four package configurations (P, FP, GP and KP)
q
Medium breakdown voltage (BV
CEO
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With zener diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta=40 to +85
C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63802P, M63802FP, M63802GP and M63802KP each
have seven circuits consisting of NPN transistor. The transis-
tor emitters are all connected to the GND pin (pin 8).
The transistors allow synchronous flow of 300mA collector
current. A maximum of 35V voltage can be applied between
the collector and emitter.
CIRCUIT DIAGRAM
V
mA
V
W
C
C
0.5 ~ +35
300
0.5 ~ +35
1.47
1.00
0.80
0.78
40 ~ +85
55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 40 ~ +85
C)
Output, H
Current per circuit output, L
V
CEO
I
C
V
I
P
d
T
opr
T
stg
Ta = 25
C, when mounted
on board
M63802P
M63802FP
M63802GP
M63802KP
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
ton
toff
50%
50%
50%
50%
OUTPUT
INPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50
, V
IH
= 18V
(2)Input-output conditions : R
L
= 220
, Vo = 35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
PG
50
R
L
OUTPUT
INPUT
Vo
C
L
Measured device
Duty Cycle no more than 45%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
Duty Cycle no more than 24%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = 40 ~ +85
C)
V
(BR) CEO
V
IN(on)
h
FE
V
V
--
35
--
--
13
50
--
--
--
19
--
--
0.2
0.8
23
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Collector-emitter breakdown voltage
"On" input voltage
DC amplification factor
I
CEO
= 10
A
I
IN
= 1mA, I
C
= 10mA
I
IN
= 2mA, I
C
= 150mA
I
IN
= 1mA, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA
V
CE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
V
O
V
0
0
0
0
0
0
0
0
0
0
--
--
--
--
--
--
--
--
--
--
35
250
160
250
130
250
120
250
120
30
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
I
C
V
IN
Input voltage
Collector current
(Current per 1 circuit
when 7 circuits are
coming on simulta-
neously)
M63802P
M63802FP
M63802GP
M63802KP
ns
ns
--
--
140
240
--
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
t
on
t
off
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Thermal Dirtying Factor Characteristics
Ambient temperature Ta (
C)
Power dissipation Pd (W)
Input Characteristics
Input voltage V
I
(V)
Input current
I
I
(mA)
Duty Cycle-Collector Characteristics
(M63802P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63802P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63802FP)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63802FP)
Duty cycle (%)
Collector current Ic (mA)
2.0
1.5
1.0
0.5
0
0
25
50
75
100
M63802P
M63802FP
M63802GP
M63802KP
0.744
0.520
0.418
0.406
85
4
3
2
1
0
0
30
25
20
15
10
5
Ta = 25
C
Ta = 40
C
Ta = 85
C
0
100
20
40
60
80
400
300
200
100
0
5
6
7
1
~
4
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
400
300
200
100
0
0
100
20
40
60
80
1
~
2
3
4
5
6
7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
400
300
200
100
0
0
100
20
40
60
80
1
~
3
4
5
6
7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta=25
C
400
300
200
100
0
0
100
20
40
60
80
1
2
3
4
5
6
7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63802P/FP/GP/KP
7-UNIT 300mA TRANSISTOR ARRAY
Duty Cycle-Collector Characteristics
(M63802GP/KP)
Duty cycle (%)
Collector current
Ic
(mA)
Duty Cycle-Collector Characteristics
(M63802GP/KP)
Duty cycle (%)
Collector current
Ic
(mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification f
actor h
FE
400
300
200
100
0
0
100
20
40
60
80
1
~
2
4
5
6
7
3
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
400
300
200
100
0
0
100
20
40
60
80
1
2
3
4
56
7
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
250
200
150
100
50
0
0
0.2
0.4
0.6
0.8
Ta = 25
C
I
B
= 0.5mA
I
B
= 1mA
I
B
= 1.5mA
I
B
= 3mA
I
B
= 2mA
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
Ta = 25
C
V
I
= 12V
V
I
= 16V
V
I
= 20V
V
I
= 24V
V
I
= 32V
V
I
= 28V
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
Ta = 85
C
I
I
= 2mA
Ta = 25
C
Ta = 40
C
10
0
10
1
10
2
10
1
10
2
10
3
2 3
5 7
2 3 5 7
2
3
5
7
2
3
5
7
10
3
2 3
5 7
V
CE
= 10V
Ta = 25
C
POWEREX