Jan. 2000
Unit:
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
10.5K
10K
Vz=7V
Package type
18P4G(P)
20P2N-A(FP)
Package type
20P2E-A(KP)
IN7
7
12
IN5
5
14
INPUT
OUTPUT
IN4
4
15
IN3
3
IN2
2
17
1
IN1
18
IN6
6
13
O1
O2
O3
O4
O5
O6
O7
16
IN8
8
11
GND
9
O8
10
NC
IN7
8
13
IN5
6
15
INPUT
OUTPUT
IN4
5
16
IN3
4
IN2
IN1
IN6
7
14
3
18
O1
O2
O3
O4
O5
O6
O7
17
IN8
9
12
GND
10
O8
11
2
19
1
20
NC
NC
NC
NC : No connection
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
PIN CONFIGURATION
CIRCUIT DIAGRAM
DESCRIPTION
M63805P/FP/KP are eight-circuit Single transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
q
Three package configurations (P, FP, and KP)
q
Medium breakdown voltage (BV
CEO
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With zener diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = 40 to +85
C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63805P/FP/KP each have eight circuits consisting of
NPN transistor. The transistor emitters are all connected to
the GND pin. The transistors allow synchronous flow of
300mA collector current. A maximum of 35V voltage can be
applied between the collector and emitter.
POWEREX
Jan. 2000
M63805P
M63805FP
M63805KP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = 40 ~ +85
C)
V
(BR) CEO
V
IN(on)
h
FE
V
V
--
35
--
--
13
50
--
--
--
19
--
--
0.2
0.8
23
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
Collector-emitter breakdown voltage
"On" input voltage
DC amplification factor
I
CEO
= 10
A
I
IN
= 1mA, I
C
= 10mA
I
IN
= 2mA, I
C
= 150mA
I
IN
= 1mA, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA
V
CE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
V
O
V
0
0
0
0
0
0
0
0
--
--
--
--
--
--
--
--
35
250
170
250
130
250
100
30
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
I
C
V
IN
Input voltage
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
M63805P
M63805FP
M63805KP
ns
ns
--
--
140
240
--
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
t
on
t
off
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
W
C
C
0.5 ~ +35
300
0.5 ~ +35
1.79
1.10
0.68
40 ~ +85
55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 40 ~ +85
C)
Output, H
Current per circuit output, L
V
CEO
I
C
V
I
P
d
T
opr
T
stg
Ta = 25
C, when mounted
on board
POWEREX
Jan. 2000
ton
toff
50%
50%
50%
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50
, V
IH
= 18V
(2)Input-output conditions : R
L
= 220
, Vo = 35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
PG
50
R
L
OUTPUT
INPUT
Vo
C
L
Measured device
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Thermal Derating Factor Characteristics
Ambient temperature Ta (
C)
Power dissipation Pd (W)
Input Characteristics
Input voltage V
I
(V)
Input current I
I
(mA)
Duty Cycle-Collector Characteristics
(M63805P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63805P)
Duty cycle (%)
Collector current Ic (mA)
2.0
1.5
1.0
0.5
0
0
25
50
75
100
85
0
100
20
40
60
80
400
300
200
100
0
~
400
300
200
100
0
0
100
20
40
60
80
~
M63805P
M63805FP
M63805KP
0.931
0.572
0.354
4
3
2
1
0
0
30
25
20
15
10
5
Ta = 40
C
Ta = 25
C
Ta = 85
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
POWEREX
Jan. 2000
Duty Cycle-Collector Characteristics
(M63805FP)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63805FP)
Duty Cycle-Collector Characteristics
(M63805KP)
Duty cycle (%)
Collector current Ic (mA)
400
300
200
100
0
0
100
20
40
60
80
~
400
300
200
100
0
0
100
20
40
60
80
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
250
200
150
100
50
0
0
0.2
0.4
0.6
0.8
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
Duty Cycle-Collector Characteristics
(M63805KP)
Duty cycle (%)
Collector current Ic (mA)
Duty cycle (%)
Collector current Ic (mA)
400
300
200
100
0
0
100
20
40
60
80
~
400
300
200
100
0
0
100
20
40
60
80
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
Ta = 25
C
I
B
= 3mA
I
B
= 2mA
I
B
= 1.5mA
I
B
= 1mA
I
B
= 0.5mA
Ta = 25
C V
I
= 32V
V
I
= 28V
V
I
= 24V
V
I
= 20V
V
I
= 16V
V
I
= 12V
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63805P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current Ic (mA)
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current Ic (mA)
50
40
30
20
10
0
250
200
150
100
50
0
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification f
actor h
FE
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
10
0
10
1
10
2
10
1
10
2
10
3
2 3
5 7
2 3 5 7
2
3
5
7
2
3
5
7
10
3
2 3
5 7
I
I
= 2mA
Ta = 40
C
Ta = 25
C
Ta = 85
C
Ta = 25
C
V
CE
10V
0
2
4
6
8
12
10
V
CE
= 4V
Ta = 40
C
0
4
8
12
16
20
V
CE
= 4V
Ta = 85
C
Ta = 40
C
Ta = 25
C
Ta = 85
C
Ta = 25
C
POWEREX
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