Jan. 2000
Unit:
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
INPUT
OUTPUT
GND
10.5k
10k
COM
Package type
18P4G(P)
20P2N-A(FP)
Package type
20P2E-A(KP)
IN7
7
12
IN5
5
14
INPUT
OUTPUT
IN4
4
15
IN3
3
IN2
2
17
1
IN1
18
IN6
6
13
O1
O2
O3
O4
O5
O6
O7
16
IN8
8
11
GND
9
O8
10
COM COMMOM
IN7
8
13
IN5
6
15
INPUT
OUTPUT
IN4
5
16
IN3
4
IN2
IN1
IN6
7
14
3
18
O1
O2
O3
O4
O5
O6
O7
17
IN8
9
12
GND
10
O8
11
2
19
1
20
NC
NC
COM
COMMOM
NC : No connection
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
DESCRIPTION
M63817P/FP/KP are eight-circuit Single transistor arrays
with clamping diodes. The circuits are made of NPN transis-
tors. Both the semiconductor integrated circuits perform
high-current driving with extremely low input-current supply.
FEATURES
q
Three package configurations (P, FP, and KP)
q
Medium breakdown voltage (BV
CEO
35V)
q
Synchronizing current (I
C(max)
= 300mA)
q
With clamping diodes
q
Low output saturation voltage
q
Wide operating temperature range (Ta = 40 to +85
C)
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M63817P/FP/KP each have eight circuits consisting of
NPN transistor. A spike-killer clamping diode is provided be-
tween each output pin (collector) and COM pin. The transis-
tor emitters are all connected to the GND pin. The transistors
allow synchronous flow of 300mA collector current. A maxi-
mum of 35V voltage can be applied between the collector
and emitter.
CIRCUIT DIAGRAM
POWEREX
Jan. 2000
M63817P
M63817FP
M63817KP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle no more than 50%
Duty Cycle no more than 100%
Duty Cycle no more than 30%
Duty Cycle no more than 100%
Duty Cycle no more than 12%
Duty Cycle no more than 100%
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = 40 ~ +85
C)
V
(BR) CEO
V
IN(on)
V
F
I
R
h
FE
V
V
V
A
--
35
--
--
7.5
--
--
50
--
--
--
11.0
1.2
--
--
--
0.2
0.8
15.0
2.0
10
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
V
Collector-emitter breakdown voltage
"On" input voltage
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
I
CEO
= 10
A
I
IN
= 1mA, I
C
= 10mA
I
IN
= 2mA, I
C
= 150mA
I
IN
= 1mA, I
C
= 10mA
I
F
= 250mA
V
R
= 35V
V
CE
= 10V, I
C
= 10mA
V
CE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
V
O
V
0
0
0
0
0
0
0
0
--
--
--
--
--
--
--
--
35
250
170
250
130
250
100
30
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Output voltage
mA
V
I
C
V
IN
Input voltage
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
M63817P
M63817FP
M63817KP
ns
ns
--
--
120
240
--
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
t
on
t
off
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
V
mA
V
mA
V
W
C
C
0.5 ~ +35
300
0.5 ~ +35
300
35
1.79
1.10
0.68
40 ~ +85
55 ~ +125
Ratings
Symbol
Parameter
Conditions
Unit
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 40 ~ +85
C)
Output, H
Current per circuit output, L
V
CEO
I
C
V
I
I
F
V
R
P
d
T
opr
T
stg
Ta = 25
C, when mounted
on board
POWEREX
Jan. 2000
ton
toff
50%
50%
50%
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Zo = 50
, V
IH
= 11V
(2)Input-output conditions : R
L
= 220
, Vo = 35V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
PG
50
R
L
OUTPUT
INPUT
Vo
C
L
OPEN
Measured device
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
TYPICAL CHARACTERISTICS
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
Thermal Derating Factor Characteristics
Ambient temperature Ta (
C)
Power dissipation Pd (W)
Input Characteristics
Input voltage V
I
(V)
Input current
I
I
(mA)
Duty Cycle-Collector Characteristics
(M63817P)
Duty cycle (%)
Collector current Ic (mA)
Duty Cycle-Collector Characteristics
(M63817P)
Duty cycle (%)
Collector current Ic (mA)
2.0
1.5
1.0
0.5
0
0
25
50
75
100
85
0
100
20
40
60
80
400
300
200
100
0
6
7
8
1
~
5
400
300
200
100
0
0
100
20
40
60
80
1
~
3
4
5
6
7
8
0.931
0.572
0.354
4
3
2
1
0
0
30
25
20
15
10
5
M63817P
M63817FP
M63817KP
Ta = 25
C
Ta = 40
C
Ta = 85
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63817FP)
Duty cycle (%)
Collector current
Ic
(mA)
Duty Cycle-Collector Characteristics
(M63817FP)
Duty Cycle-Collector Characteristics
(M63817KP)
Duty cycle (%)
Collector current
Ic
(mA)
400
300
200
100
0
0
100
20
40
60
80
1
~
3
5
6
7
8
4
400
300
200
100
0
0
100
20
40
60
80
1
2
3
4
5
67
8
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
250
200
150
100
50
0
0
0.2
0.4
0.6
0.8
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
Duty Cycle-Collector Characteristics
(M63817KP)
Duty cycle (%)
Collector current
Ic
(mA)
Duty cycle (%)
Collector current
Ic
(mA)
400
300
200
100
0
0
100
20
40
60
80
1
~
2
4
5
6
8
7
3
400
300
200
100
0
0
100
20
40
60
80
1
2
3
4
5
67
8
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 25
C
The collector current values
represent the current per circuit.
Repeated frequency
10Hz
The value the circle represents the value of
the simultaneously-operated circuit.
Ta = 85
C
Ta = 25
C
I
B
= 3mA
I
B
= 2mA
I
B
= 1.5mA
I
B
= 1mA
I
B
= 0.5mA
Ta = 25
C V
I
= 28V
V
I
= 24V
V
I
= 20V
V
I
= 8V
V
I
= 12V
V
I
= 16V
POWEREX
Jan. 2000
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63817P/FP/KP
8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current
Ic
(mA)
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Collector current
Ic
(mA)
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
F
orw
ard bisa current
I
F
(mA)
50
40
30
20
10
0
250
200
150
100
50
0
250
200
150
100
50
0
0
0.4
0.8
1.2
1.6
2.0
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE(sat)
(V)
Collector current Ic (mA)
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
DC amplification f
actor h
FE
100
80
60
40
20
0
0
0.05
0.10
0.15
0.20
10
0
10
1
10
2
10
1
10
2
10
3
2 3
5 7
2 3 5 7
2
3
5
7
2
3
5
7
10
3
2 3
5 7
0
4
8
12
16
20
I
I
= 2mA
Ta = 40
C
Ta = 25
C
Ta = 85
C
Ta = 25
C
V
CE
10V
0
1.0
2.0
3.0
4.0
5.0
V
CE
= 4V
Ta = 85
C
Ta = 40
C
Ta = 25
C
V
CE
= 4V
Ta = 85
C
Ta = 25
C
Ta = 40
C
Ta = 85
C
Ta = 25
C
Ta = 40
C
POWEREX
PDF 
ZIP