MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS11011

FLAT-BASE TYPE

INSULATED TYPE

Jan. 2000

PS11011

INTEGRATED FUNCTIONS AND FEATURES

· Converter bridge for 3 phase AC-to-DC power conversion.
· Circuit for dynamic braking of motor regenerative energy.
· 3-phase IGBT inver ter bridge configured by the latest 3rd.

generation IGBT and diode technology.

· Inverter output current capability I

(Note 1):

APPLICATION

Acoustic noise-less 0.1kW/AC200V class 3 phase inverter and other motor control applica-

tions

PACKAGE OUTLINES

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS11011

FLAT-BASE TYPE

INSULATED TYPE

INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:

· For inverter side upper-leg IGBTs : Drive circuit, High voltage isolated high-speed level shifting, Short circuit protection (SC).

Bootstrap circuit supply scheme (single drive power supply) and Under voltage protection (UV).

· For inverter side lower-leg IGBTs : Drive circuit, Short circuit protection (SC).

Control supply circuit under- & over- voltage protection (OV/UV).
System over temperature protection (OT). Fault output signaling circuit (F

) and Current limit warn-

ing signal output (CL).

· For Brake circuit IGBT : Drive circuit
· Warning and Fault signaling :

: Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.

: N-side control supply abnormality locking (OV/UV).

: System over-temperature protection (OT).

CL : Warning for inverter current overload condition

· For system feedback control : Analogue signal feedback reproducing actual inverter output phase currents (3

· Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.

(Note 1) : The inverter output current is assumed to be sinu-

soidal and the peak current value of each of the
above loading cases is defined as : I

= I

(Fig. 1)

Type Name

PS11011

100% load

0.8A (rms)

150% over load

1.2A (rms), 1min

1 CBU+
2 CBU
3 CBV+
4 CBV
5 CBW+
6 CBW
7 GND
8 NC
9 VDH
10 CL
11 FO1
12 FO2
13 FO3
14 CU
15 CV
16 CW
17 UP
18 VP
19 WP
20 UN

21 VN
22 WN
23 Br

31 R
32 S
33 T
34 P1
35 P2
36 N
37 B
38 U
39 V
40 W

0.3

0.5

0.03

0.8

0~0.8

0.4

0.5

20.4

84.2

0.8

17.6

0.5

5.08

0.3

9 = 45.72

0.8

4-R2

2-R4

0.5

4.14

0.5

0.6

8.5

(12.25)

2 4

1 2 3 4

5 6

7 8 9101112131415161718192021 23

Terminals Assignment:

1.2

LABEL

3.5

Control Pin top

portion details

Main terminal top

portion details

0.3

0.5

0.6

0.35MAX

0.5

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS11011

FLAT-BASE TYPE

INSULATED TYPE

Jan. 2000

(15V line)

VDH

GND

CUCV CW

CL FO1 FO2 FO3

R
S

AC200V line input

C3 ; 3.3

F or more, tight tolerance, temp-compensated electrolytic type (Note : the value may change

depending on the type PWM control scheme used in the applied system)
C4 ; 2

F R-category ceramic condenser for noise filtering.

C2 ;
3.3

F or more

FO Logic

Protection

Circuit

Level shifter

Drive Circuit

Drive Curcuit

Trig signal conditioning

Current sensing

circuit

Protection

circuit

Control supply

fault sense

Z : Surge absorber.
C : AC filter (Ceramic condenser 2.2~6.5nF)
[Note : Additionally an appropriate Line-to line
surge absorber circuit maybe necessary
depending on the application environment].

AC 200V line
output

Brake resistor
connection,
Inrush prevention
circuit, etc.

Note 1) To prevent chances of signal oscillation, an RC coupling at each output is recommended. (see also Fig.10)
Note 2) By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU, without any opto or transformer isolation ispossible. (see also Fig.10)
Note 3) All these outputs are open collector type. Each signal line should be pulled up to plus side of the 5V power supply with approximately 5.1k

resistance. (see also Fig.10)

Note 4) The wiring between power DC link capacitor and P/N terminals should be as short as possible to protect the ASIPM against catastrophic high surge voltage. For extra
precaution, a small film type snubber capacitor (0.1~0.22

F, high voltage type) is recommended to be mounted close to these P and N DC powerinput pins.

Analogue signal output corresponding to

each phase current (5V line) Note 1)

Each phase input (PWM)

(5V line) Note 2)

Fault output

(5V line) Note 3)

CBU

CBU+

CBV

CBV+

CBW

CBW+

C4,C3

Application Specific Intelligent

Power Module

T.S.

Each output IGBT collector current

Brake IGBT collector current

Brake diode anode current

INTERNAL FUNCTIONS BLOCK DIAGRAM

(Fig. 2)

450

500

Applied between P2-N

Applied between P2-N, Surge-value

Applied between P-U, V, W, Br or U, V, W,
Br-N

= 25

Note: "( )" means I

peak value

Supply voltage

Supply voltage (surge)

CC(surge)

Condition

Symbol

Item

Ratings

Unit

MAXIMUM RATINGS

(Tj = 25

INVERTER PART (Including Brake Part)

or V

P(S)

or V

N(S)

(

)

Each output IGBT collector-emitter static voltage

Each output IGBT collector-emitter
switching surge voltage

600

2 (

2 (4)

Fault output supply voltage

Fault output current

Current-limit warning (CL) output voltage

CL output current

Analogue current signal output current

Applied between V

-GND, C

BU+

-C

BV+

-C

, C

BW+

-C

Applied between U

· V

· W

· U

· V

· B

-GND

Applied between F

· F

-GND

Sink current of F

· F

Applied between CL-GND

Sink current of CL

Sink current of CU · CV · CW

, V

Supply voltage

Symbol

Item

Ratings

Unit

CONTROL PART

Condition

CIN

Input signal voltage

0.5 ~ 7.5

0.5 ~ 7

rectifying circuit

1 cycle at 60Hz, peak value non-repetitive

Value for one cycle of surge current

Condition

Symbol

Item

Ratings

Unit

RRM

FSM

Repetitive peak reverse voltage

Recommended AC input voltage

DC output current

Surge (non-repetitive) forward current

t for fusing

800

220

138

CONVERTER PART

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS11011

FLAT-BASE TYPE

INSULATED TYPE

Jan. 2000

0.1

400V, Input = ON (one-shot)

Tj = 125

C start

13.5V

= V

16.5V

400V, Tj

125

Ic < I

(CL) operation level, Input = ON

13.5V

= V

16.5V

FBr

RRM

ton

tc(on)

toff

tc(off)

trr

7.3

6.1

7.3

6.1

4.8

0.053

Collector-emitter saturation voltage

FWDi forward voltage

Brake IGBT
Collector-emitter saturation voltage

Brake diode forward voltage

Converter diode reverse current

Converter diode voltage

Switching times

FWD reverse recovery time

CE(sat)

Ratings

C/W

Junction to case Thermal
Resistance

Condition

Symbol

Item

Ratings

Unit

(Note 2)

(Fig. 3)

60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.

Mounting screw: M3.5

stg

iso

Junction temperature

Storage temperature

Module case operating temperature

Isolation voltage

Mounting torque

20 ~ +125

40 ~ +125

20 ~ +100

2500

0.78 ~ 1.27

Vrms

kg·cm

TOTAL SYSTEM

Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-

ever, these power elements can endure junction temperature as high as 150

C instantaneously . To make use of this additional tem-

perature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is requested
to be provided before use.

Condition

Symbol

Item

Ratings

Inverter IGBT (1/6)

Inverter FWDi (1/6)

Brake IGBT

Brake FWDi

Converter Di (1/6)

Case to fin, thermal grease applied (1 Module)

Rth(j-c)

Rth(c-f)

Min.

THERMAL RESISTANCE

Typ.

Max.

Unit

(Fig. 3)

CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)

= V

= 15V, Input = ON, Tj = 25

C, I

= 2A

Condition

Symbol

Item

Min.

Typ.

Max.

Unit

· No destruction
· F

output by protection operation

ELECTRICAL CHARACTERISTICS

(Tj = 25

C, V

= 15V, V

= 15V unless otherwise noted)

Contact Thermal Resistance

Tj = 25

C, I

= 2A, Input = OFF

· No destruction
· No protecting operation
· No F

output

CE(sat)Br

= 15V, Input = ON, Tj = 25

C, I

= 2A

Tj = 25

C, I

= 2A, Input = OFF

= V

RRM

, Tj = 125

Tj = 25

C, I

= 5A

1/2 Bridge inductive load, Input = ON

= 300V, Ic = 2A, Tj = 125

= 15V, V

= 15V

Note : ton, toff include delay time of the internal control

circuit

Short circuit endurance

(Output, Arm, and Load,

Short Circuit Modes)

Switching SOA

0.3

0.6

0.2

1.1

0.35

2.9

3.5

2.9

1.5

0.6

1.8

1.0

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS11011

FLAT-BASE TYPE

INSULATED TYPE

Jan. 2000

Supply voltage

CIN(on)

CIN(off)

PWM

dead

RECOMMENDED CONDITIONS

400 (max.)

Applied across P2-N terminals

Applied between V

-GND, C

BU+

-C

, C

BV+

-C

BW+

-C

Condition

Symbol

Item

Ratings

Unit

Min.

150

Trip level

Reset level

Trip level

Reset level

Trip level

Reset level

Trip level

Reset level

Filter time

Idle

Active

d(read)

CL(H)

CL(L)

OTr

DHr

DBr

FO(H)

FO(L)

int

C+

(200%)

C+

(200%)

Ic = 0A

Ic = I

(200%)

Ic = I

(200%)

Input on threshold voltage

Input off threshold voltage

Input pull-up resistor

1.87

0.77

2.97

4.0

3.50

100

11.05

11.55

18.00

16.50

10.0

10.5

= 20

C ~ +100

125

6.00

110

12.00

12.50

19.20

17.50

11.0

11.5

= 15V

= 20

C ~ +100

(Fig. 4)

0.8
2.5

Integrated between input terminal-V

100

C, Tj

125

= 15V, T

= 20

C ~ +100

(Note 3)

Relates to corresponding input

(Except brake part) T

= 20

C ~ +100

Relates to corresponding input (Except brake part)

Condition

Symbol

Ratings

th(on)

th(off)

PWM

Typ.

Max.

Unit

ELECTRICAL CHARACTERISTICS

(Tj = 25

C, V

= 15V, V

= 15V unless otherwise noted)

(Note 3) : (a) Allowable minimum input on-pulse width : This item applies to P-side circuit only.

(b) Allowable maximum input on-pulse width : This item applies to both P-side and N-side circuits excluding the brake circuit.

(Note4) : CL output : The "current limit warning (CL) operation circuit outputs warning signal whenever the arm current exceeds this limit. The

circuit is reset automatically by the next input signal and thus, it operates on a pulse-by-pulse scheme.

(Note5) : The short circuit protection works instantaneously when a high short circuit current flows through an internal IGBT rising up momen-

tarily. The protection function is, thus meant primarily to protect the ASIPM against short circuit distraction. Therefore, this function is
not recommended to be used for any system load current regulation or any over load control as this might, cause a failure due to
excessive temperature rise. Instead, the analogue current output feature or the over load warning feature (CL) should be appropri-
ately used for such current regulation or over load control operation. In other words, the PWM signals to the ASIPM should be shut
down, in principle, and not to be restarted before the junction temperature would recover to normal, as soon as a fault is feed back
from its F

pin of the ASIPM indicating a short circuit situation.

Allowable input on-pulse width

Allowable input signal dead time for
blocking arm shoot-through

Input inter-lock sensing

Analogue signal linearity with
output current

Offset change area vs temperature

= 15V, T

= 20

C ~ +100

Ic > I

(200%), V

= 15V

(Fig. 4)

Analogue signal output voltage limit

-V

(200%)|

Analogue signal over all linear variation

Analogue signal data hold accuracy

After input signal trigger point

(Fig. 8)

Analogue signal reading time

Current limit warning (CL) operation level

=15V

Open collector output

2.2

2.64

Open collector output

1.4
3.0

150

2.27

1.17

3.37

1.1

3.10

9.60

120

12.75

13.25

20.15

18.65

12.0

12.5

2.0
4.0

--
20

500

100

2.57

1.47

3.67

0.7

3.60

V
V

kHz

PWM input frequency

=15V, T

= 20

C ~ +100

(Note 4)

Item

dead

Correspond to max. 500

s data hold period

only, Ic = I

(200%)

(Fig. 5)

Short circuit over current trip level

Signal output current of
CL operation

Idle

Active

Tj = 25

(Fig. 7) (Note 5)

Supply circuit under &
over voltage protection

Over temperature protection

Fault output current

= 15V, V

CIN

= 5V

Circuit current

, V

Control supply voltage

Supply voltage ripple

Input on voltage

Input off voltage

PWM Input frequency

Arm shoot-through blocking time

Using application circuit

1.5

1 (max.)

0 ~ 0.3

4.8 ~ 5.0

2 ~ 20

2.2 (min.)

kHz

MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>

PS11011

FLAT-BASE TYPE

INSULATED TYPE

Jan. 2000

delay time

Short circuit sensing signal V

Error output F

Gate signal Vo of each phase
upper arm(ASIPM internal)

Input signal V

CIN

of each phase

upper arm

Input signal V

CIN(p)

of each phase upper arm

Input signal V

CIN(n)

of each phase lower arm

Gate signal V

o(p)

of each phase upper arm

(ASIPM internal)

Gate signal V

o(n)

of each phase upper arm

(ASIPM internal)

Error output F

(505

500

(505

s)-V

Note ; Ringing happens around the point where the signal output
voltage changes state from "analogue" to "data hold" due
to test circuit arrangement and instrumentational trouble.
Therefore, the rate of change is measured at a 5

s delayed point.

200

Analogue output signal

data hold range

400

300

100

300

400

+(200%)

(200%)

(V)

min

max

Real load current peak value.(%)(I

=15V

100°C

(Fig. 4)

Fig. 4 OUTPUT CURRENT ANALOGUE SIGNALING

LINEARITY

Fig. 5 OUTPUT CURRENT ANALOGUE SIGNALING

"DATA HOLD" DEFINITION

Fig. 6 INPUT INTERLOCK OPERATION TIMING CHART

Note : Input interlock protection circuit ; It is operated when the input signals for any upper-arm / lower-arm pair of a phase are simulta-

neously in "LOW" level.

By this interlocking, both upper and lower IGBTs of this mal-triggered phase are cut off, and "F

" signal is outputted. After an "input

interlock" operation the circuit is latched. The "F

" is reset by the high-to-low going edge of either an upper-leg, or a lower-leg input,

whichever comes in later.

Fig. 7 TIMING CHART AND SHORT CIRCUIT PROTECTION OPERATION

Note : Short circuit protection operation. The protection operates with "F

" flag and reset on a pulse-by-pulse scheme. The protection by

gate shutdown is given only to the IGBT that senses an overload (excluding the IGBT for the "Brake").

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: PS11011

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: PS11011