Preliminary
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBT Common Emitter Module
200 Amp/600 Volts
QIC0620003
200 Amp/600 Volts
Description:
Powerex Fast Recovery Diode
Modules are designed for use in
applications requiring fast switching.
The modules are isolated for easy
mounting with other components on a
common heatsink.
Features:
Isolated Mounting
Isolation Material - DBC Alumina
Low Drive Power
Internal Series Gate Resistors
Super-Fast FWD (110ns)
Copper Baseplate
2500 V isolating voltage
Dimensions Inches
Millimeters
A 3.70
94
B 1.34
34
C 1.18
30
D 3.15
80
E 0.67
17
F 0.28
6.99
G 0.67
17.1
H 0.91
23
J 0.91
23
K M6X1.0
M6X1.0
L
DIA 0.256
DIA. 6.5
QIC0620003
Dual IGBT Module
Common Emitter
200 Amperes / 600 Volts
Preliminary
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBT Common Emitter Module
200 Amp/600 Volts
QIC0620003
200 Amp/600 Volts
Maximum Ratings, Tj=25
C unless otherwise specified
Ratings
Symbol QIC0620003
Units
Collector Emitter Voltage
V
CES
600 Volts
Gate Emitter Voltage
V
GES
20 Volts
Collector Current
I
C
200
Amperes
Peak Collector Current
I
CM
400*
Amperes
Diode Forward Current
I
F
50
Amperes
Diode Forward Surge Current
I
FM
500
Amperes
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Mounting Torque, M6 Terminal Screws
-
40
In-lb
Mounting Torque, M6 Mounting Screws
-
40
In-lb
Module Weight (Typical)
-
200
Grams
V Isolation
V
RMS
2500 Volts
*Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
I
CES
V
CE
=V
CES
V
GE
=0V
-
- 1.0 mA
Gate Leakage Current
I
GES
V
GE
=V
GES
V
CE
=0V -
- 0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
=20mA, V
CE
=10V 4.5 6.0 7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=200A, V
GE
=15V - 2.1 2.8 Volts
I
C
=200A, V
GE
=15V,
T
j
=150
C
- 2.15 - Volts
Total Gate Charge
Q
G
V
CC
=300V,
I
C
=200A, V
GS
=15V
- 600 -
nC
Diode Forward Voltage
V
FM
I
F
=50A, V
GS
=0V - - 2.8 Volts
Dynamic Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic
Symbol Test
Conditions Min. Typ. Max. Units
Input Capacitance
C
ies
-
-
20
nF
Output Capacitance
C
oes
-
-
7
nF
Reverse Transfer Capacitance
C
res
V
GE
=0V
V
CE
=10V
f=1MHz
- - 4 ns
Turn on Delay time
t
d(on)
-
-
200
ns
Rise Time
t
r
-
-
550
ns
Turn- off Delay Time
t
d(off)
-
-
300
ns
Fall Time
t
f
V
CC
=300V
I
C
=200A
V
GE1
=V
GE2
=15V
R
G
=3.1
- - 300 ns
Diode Reverse Recovery Time
trr
-
-
110
ns
Diode Reverse Recovery Charge
Qrr
I
F
=50A
di
F
/dt=-100A/
S
- 0.37 -
C
Thermal and Mechanical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
JC
Per
IGBT -
0.14
TBD
C/W
Thermal Resistance, Junction to Case
R
JC
Per
Diode -
0.70
TBD
C/W
Contact Thermal Resistance, Thermal Grease
Applied
R
CF
Per
Module - -
0.075
C/W
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