QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272
Asymmetrical Half Bridge IGBT H-Series
Hermetic Module
400 Amperes/600 Volts
Page 1
PRELIMINARY
06/06/97
Description:
Powerex IGBT Hermetic modules are
designed for use in switching applications.
Each Module consists of two IGBT transistors,
four super fast free wheel diodes in an
asymmetrical half bridge configuration with
each transistor having a reverse connected
super fast recovery free wheel diode. All
components are located in a hermetically
sealed chamber and are electrically isolated
from the heat sinking base plate, offering
simplified system assembly and thermal
management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
Isolated Base plate for Easy Heat
sinking
Fully Hermetic Package
Package Design Capable of Use at
High Altitudes
Package can be modified to adhere
to customer dimensions.
High Capacity Diodes (D1 & D3)
Schematic:
Applications:
AC Motor Control
Motion/Servo Control
Air Craft Applications
Ordering Information:
Hermetic Package TBD
D1
D4
D2
D3
QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272
Asymmetrical Half Bridge IGBT H-Series
Hermetic Module
400 Amperes/600 Volts
Page 2
PRELIMINARY
06/06/97
Contact Powerex Custom Modules
QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272
Asymmetrical Half Bridge IGBT H-Series
Hermetic Module
400 Amperes/600 Volts
Page 3
PRELIMINARY
06/06/97
Maximum Ratings, Tj=25
C unless otherwise specified
Ratings
Symbol
Units
Collector Emitter Voltage
V
CES
600
Volts
Gate Emitter Voltage
V
GES
20
Volts
Collector Current
I
C
400
Amperes
Peak Collector Current
I
CM
800*
Amperes
Diode Forward Current (D2,D4)
I
FM
400
Amperes
Diode Forward Surge Current (D2,D4)
I
FM
800*
Amperes
Diode Forward Current (D1,D3)
I
FM
400
Amperes
V Isolation
V
RMS
2500
Volts
Static Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Min
Typ
Max
Units
Collector Cutoff Current
I
CES
V
CE
=V
CES
1.0
mA
Gate Leakage Current
I
GES
V
CE
=0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
=40mA,
V
CE
=10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=400A,
V
GE
=15V
2.1
2.8
Volts
V
CE(sat)
I
C
=400A,
V
GE
=15V,
T
j
=150
C
2.15
Volts
Total Gate Charge
Q
G
V
CC
=300V,
I
C
=400A,
V
GS
=15V
1200
nC
Diode Forward Voltage (D1,D3)
V
FM
I
E
=400A,
V
GS
=0V
2.0
Volts
Diode Forward Voltage (D2,D4)
V
FM
I
E
=200A,
V
GS
=0V
2.8
Volts
Dynamic Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Min
Typ
Max
Units
Input Capacitance
C
ies
V
GE
=0V
40
nF
Output Capacitance
C
oes
V
CE
=10V
14
nF
Reverse Transfer Capacitance
C
res
f=1MHz
8
nF
Turn on Delay time
t
d(on)
V
CC
=300V
350
nS
Rise Time
t
r
I
C
=200A
600
nS
Turn off delay time
t
d(off)
V
GE1
=V
GE2
=15
V
350
nS
Fall Time
t
f
R
G
=1.6
300
nS
Diode Reverse Recovery (D1,D3)
trr
I
E
=400A
400
nS
Diode reverse Recovery Charge
(D1, D3)
Qrr
di
E
/dt=-
400A/
S
80
C
Diode Reverse Recovery (D2, D4)
trr
I
E
=200A
110
nS
Diode reverse Recovery Charge
(D2,D4)
Qrr
di
E
/dt=-
400A/
S
1.08
C
QIP0640001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724)925-7272
Asymmetrical Half Bridge IGBT H-Series
Hermetic Module
400 Amperes/600 Volts
Page 4
PRELIMINARY
06/06/97
Thermal and Mechanical Characteristics, Tj=25
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Mi
n
Typ
Max
Units
Thermal Resistance, Junction to Case
R
JC
Per IGBT
0.085
C/W
Thermal Resistance, Junction to Case
(D1,D3)
R
JC
Per Diode
0.08
C/W
Thermal Resistance, Junction to Case
(D2,D4)
R
JC
Per Diode
0.18
C/W
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