QIQ0645002
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Low side Chopper IGBT Module
600V 450A IGBT / 600V 450A Fast Diode
Preliminary Page
1 7/25/2002
Welding Power Supplies
Description:
Powerex Low Side Chopper
IGBT Module designed specially for
customer applications. The modules
are isolated for easy mounting with
other components on a common
heatsink
.
Features:
Low Drive Requirement
Low V
CE(sat)
Super Fast Diode
(3) F Series 150A 600V
Chips per IGBT Switch
(6) F Series 150A 600V
Chips per Diode
Isolated Baseplate for Easy
Heat
Sinking
Low Thermal Impedance
Isolated Material: DBC Alumina
Applications:
Choppers
Welding Power Supplies
Dim Inches
Millimeters
A 4.25 108.0
B 2.44
62.0
C 1.14+0.04/-0.02 29+1.0/-0.5
D
3.66
0.01 93.0
0.25
E
1.88
0.01 48.0
0.25
F 0.67
17.0
G 0.16
4.0
H 0.24
6.0
J 0.59
15.0
Dim Inches
Millimeters
K 0.55
14.0
L 0.87
22.0
M 0.33
8.5
N 0.10
2.5
P 0.85
21.5
Q 0.98
25.0
R 0.11
2.8
S 0.25
Dia. 6.5
Dia.
T 0.6 15.15
QIQ0645002
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Low side Chopper IGBT Module
600V 450A IGBT / 600V 450A Fast Diode
Preliminary Page
2 7/25/2002
Maximum Ratings, Tj=25
C unless otherwise specified
Ratings Symbol
QIQ0645002
Units
Collector Emitter Voltage
V
CES
600 Volts
Gate Emitter Voltage
V
GES
20
Volts
Collector Current (T
C
=25
C)
I
C
450
Amperes
Peak Collector Current (Tj150
C)
I
CM
900*
Amperes
Diode Average Forward Current 180
Conduction, T
C
=70
C
I
FM
450
Amperes
Peak Diode Forward Current
I
FM
1800
Amperes
Diode I
2
t for Fusing for One Cycle t=8.3mS
I
2
t 121500 A
2
sec
Power Dissipation
P
d
1650 Watts
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Mounting Torque, M6 Terminal Screws
-
40
In-lb
Mounting Torque, M6 Mounting Screws
-
40
In-lb
Module Weight (Typical)
-
400
Grams
V Isolation
V
RMS
2000 Volts
*
Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Static Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
I
CES
V
CE
=V
CES
V
GE
=0V
-
- 1.0 mA
Gate Leakage Current
I
GES
V
GE
=V
GES
V
CE
=0V -
- 60
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
=45mA, V
CE
=10V 5.0 6.0 7.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=450A, V
GE
=15V - 1.6 2.2 Volts
I
C
=450A, V
GE
=15V,
T
j
=125
C
- 1.6 - Volts
Total Gate Charge
Q
G
V
CC
=300V,
I
C
=450A, V
GE
=15V
- 2790 -
nC
Diode Forward Voltage
V
FM
I
F
=900A -
2.0
2.6
Volts
I
F
=450A -
1.7
-
Volts
I
F
=300A -
1.3
-
Volts
Dynamic Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
-
-
123
nF
Output Capacitance
C
oes
-
-
8.1
nF
Reverse Transfer Capacitance
C
res
V
GE
=0V
V
CE
=10V
f=1MHz
- - 4.5 ns
Turn on Delay time
t
d(on)
-
-
TBD
ns
Rise Time
t
r
-
-
TBD
ns
Turn- off Delay Time
t
d(off)
-
-
TBD
ns
Fall Time
t
f
V
CC
=300V
I
C
=450A
V
GE1
=V
GE2
=15V
R
G
=4.2
- -
TBD ns
Diode Reverse Recovery Time
trr
-
-
150
ns
Diode Reverse Recovery Charge
Qrr
I
F
=900A
di
F
/dt=-1800A/
S
- 8.4 -
C
Thermal and Mechanical Characteristics, Tj=25
C unless otherwise specified
Characteristic Symbol
Test
Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
JC
Per IGBT
-
0.10
TBD
C/W
Thermal Resistance, Junction to Case
R
JC
Per Diode
-
0.085
TBD
C/W
Contact Thermal Resistance
(Thermal Grease Applied)
R
CF
Per Module
-
0.02
-
C/W
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