QIR0620001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
IGBT H-Series
Chopper Module
200/300 Amperes/600 Volts
Page 1
PRELIMINARY
06/07/97
Description:
Powerex IGBT modules are designed
for use in switching applications. Each
Module consists of one IGBT
transistor and one super fast recovery
diode in a chopper configuration. All
components are encapsulated in a
plastic package are electrically isolated
from the heat sinking base plate,
offering simplified system assembly and
thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
(70ns) Diodes
High Frequency Operation (20-
25kHz)
Isolated Base plate for Easy Heat
sinking
Schematic:
Applications:
AC Motor Control
Motion/Servo Control
Ordering Information:
Contact Powerex Custom Modules
D1
D2
QIR0620001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
IGBT H-Series
Chopper Module
200/300 Amperes/600 Volts
Page 2
PRELIMINARY
06/07/97
Maximum Ratings, Tj=25
C unless otherwise specified
Ratings
Symbol
Units
Collector Emitter Voltage
V
CES
600
Volts
Gate Emitter Voltage
V
GES
20
Volts
Collector Current
I
C
200
Amperes
Peak Collector Current
I
CM
400*
Amperes
Diode Forward Current (D1)
I
FM
300
Amperes
Diode Forward Surge Current (D1)
I
FM
600*
Amperes
Power Dissipation
P
d
1100
Watts
V Isolation
V
RMS
2500
Volts
Static Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Min
Typ
Max
Units
Collector Cutoff Current
I
CES
V
CE
=V
CES
1.0
mA
Gate Leakage Current
I
GES
V
CE
=0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
=20mA,
V
CE
=10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=200A,
V
GE
=15V
2.1
2.8
Volts
V
CE(sat)
I
C
=200A,
V
GE
=15V,
T
j
=150
C
2.15
Volts
Total Gate Charge
Q
G
V
CC
=300V,
I
C
=200A,
V
GS
=15V
600
nC
Diode Forward Voltage (D1)
V
FM
I
E
=300A,
V
GS
=0V
2.8
Volts
Dynamic Electrical Characteristics, Tj=25
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Min
Typ
Max
Units
Input Capacitance
C
ies
V
GE
=0V
20
nF
Output Capacitance
C
oes
V
CE
=10V
7
nF
Reverse Transfer Capacitance
C
res
f=1MHz
4
nF
Turn on Delay time
t
d(on)
V
CC
=300V
200
nS
Rise Time
t
r
I
C
=200A
550
nS
Turn off delay time
t
d(off)
V
GE1
=V
GE2
=15
V
300
nS
Fall Time
t
f
R
G
=3.1
300
nS
Diode Reverse Recovery Time
trr
I
E
=200A
110
nS
Diode reverse Recovery Charge
Qrr
di
E
/dt=-
400A/
S
0.54
C
Thermal and Mechanical Characteristics, Tj=25
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Min
Typ
Max
Units
Thermal Resistance, Junction to
R
JC
Per IGBT
0.16
C/W
QIR0620001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
IGBT H-Series
Chopper Module
200/300 Amperes/600 Volts
Page 3
PRELIMINARY
06/07/97
Case
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