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Электронный компонент: RM50HG-12S

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Dimension
Inches
Millimeters
A
1.020.02 26.00.5
B
0.81 Max.
20.5 Max.
C
0.79 Min.
20.0 Min.
D
0.240.008
6.00.2
E
0.2140.012
5.450.3
F
0.200.012
5.00.3
G
0.2140.012 Dia. Dia. 3.20.2
H
0.120.012
3.00.3
J
0.100.012
2.50.3
K
0.10
2.5
L
0.080.012
2.00.3
M
0.040.008
1.00.2
N
0.020.008
0.60.2
Description:
Powerex Super Fast Recovery
Diodes are designed for use in
applications requiring fast
switching.
Features:
Non-Isolated Package
Planar Chips
trr = 200 ns Max.
Applications:
Snubber Circuits
Switching Power Supplies
Free Wheeling
Ordering Information:
Select the complete eight digit
part number you desire from
the table below.
Example: RM50HG-12S is a
600 Volt, 50 Ampere Super Fast
Recovery Single Diode.
Current Rating
Voltage
Type
Amperes
Volts (x50)
RM
50
12
D-3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Super Fast Recovery
Single Diode
50 Amperes/600 Volts
RM50HG-12S
Outline Drawing
RM50HG-12S
Super Fast Recovery
Single Diode
50 Amperes/600 Volts
A
C
D
E
E
F
B
H
N
M
K
J
L
G - DIA.
1
2
3
1
2
3
4
D-4
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
RM50HG-12S
Super Fast Recovery
Single Diode
50 Amperes/600 Volts
Absolute Maximum Ratings
Characteristics
Symbol
Conditions
RM50HG-12S
Units
Peak Forward Blocking Voltage
VDRM
--
600
Volts
Peak Reverse Blocking Voltage (Non-Repetitive)
VRRM
--
720
Volts
DC Reverse Blocking Voltage
VR(DC)
--
480
Volts
DC Current, TC = 80C (Resistive Load)
IF(DC)
--
50
Amperes
Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz)
IFSM
--
1000
Amperes
I2t for Fusing, (8.3 milliseconds)
I2t
--
--
A2sec
Storage Temperature
TSTG
--
-40 to 125
C
Operating Temperature
Tj
--
-40 to 150
C
Maximum Mounting Torque M3 Mounting Screw
--
--
10
kg.-cm.
Weight (Typical)
--
--
10 Grams
Electrical and Thermal Characteristics,
Tj = 25C unless otherwise specified
Characteristics
Symbol
Test Conditions
RM50HG-12S
Units
Blocking State Maximums
Reverse Leakage Current, Peak
IRRM
VRRM applied, Tj = 150C
1.0
mA
VRRM applied, Tj = 25C
0.1
mA
Conducting State Maximums
Forward Voltage Drop
VFM
Tj = 25C, IFM = 200A
4.0
Volts
Switching Minimums
Reverse Recovery Time
trr
Tj = 25C, IFM = 100A
0.2
s
Reverse Recovery Charge
Qrr
di/dt = -1000A/ s, VR = 300V
--
C
Lead Integrity
--
Tension Load: 25 kg
30.0
s
--
Bending Load: 1 kg bent to 90
2.0
times
Thermal Maximums
Thermal Resistance, Junction-to-Case
R (J-C)
Diode 0.5
C/Watt
Contact Thermal Resistance, Case-to-Fin
R (C-S) Case to Fin, Thermal Grease Applied 0.5
C/Watt
*Maximum ratings unless otherwise specified