PACKAGE DIMENSIONS
DESCRIPTION
The QT Optoelectronics H11AA814 Series consists
of two gallium arsenide infrared emitting diodes, con-
nected in inverse parallel, driving a single silicon
phototransistor in a 4-pin dual in-line package.
The H11A817 Series consists of a gallium arsenide
infrared emitting diode driving a silicon phototransis-
tor in a 4-pin dual in-line package.
s
Compact 4-pin package
s
Current transfer ratio in selected groups:
H11AA814:
20-300%
H11A817:
50-600%
H11AA814A: 50-150%
H11A817A:
80-160%
H11A817B:
130-260%
H11A817C: 200-400%
H11A817D: 300-600%
FEATURES
APPLICATIONS
4PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES
H11A817 SERIES
H11AA814 Series
s
AC line monitor
s
Unknown polarity DC sensor
s
Telephone line interface
H11A817 Series
s
Power supply regulators
s
Digital logic inputs
s
Microprocessor inputs
s
Industrial controls
TOTAL PACKAGE
OUTPUT TRANSISTOR
Storage temperature . . . . . . . . . . . . . . . . .-55 to 150 C
Power dissipation (25 C ambient) . . . . .150 mW
Operating temperature . . . . . . . . . . . . . . . -55 to 100 C
Derate linearly (above 25 C) . . . . . .2.0 mW/ C
Lead solder temperature . . . . . . . . . . . 260 C for 10 sec
V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V
Power dissipation . . . . . . . . . . . . . . . . . . . . . . . 200 mW
V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V
Continuous collector current . . . . . . . . . . 50 mA
INPUT DIODE
Power dissipation (25 C ambient) . . . . . . . . . . . .70 mW
Derate linearly (above 25 C) . . . . . . . . . . . .1.33 mW/ C
Continuous forward current . . . . . . . . . . . . . . . . . . 50 mA
Peak forward current (1 s pulse, 300 pps) . . . . . . . . .1 A
Reverse voltage (H11A817) . . . . . . . . . . . . . . . . . . . . 5 V
ABSOLUTE MAXIMUM RATING
NOTE: ALL DIMENSIONS ARE IN INCHES (mm)
PACKAGE CODE T
.020 (.51) MIN
.100 (2.54) TYP
.200
(5.10)
MAX
.158 (4.01)
.144 (3.68)
0 to 15
.022 (.56)
.015 (.40)
.055 (1.40)
.047 (1.20)
.187 (4.75)
.175 (4.45)
.270 (6.86)
.248 (6.30)
.327
(8.30)
MAX
.300
(7.62)
MIN
.380
(9.64)
MAX
.012 (.30)
.007 (.20)
.154 (3.90)
.120 (3.05)
1
2
4
3
COLLECTOR
EMITTER
Equivalent Circuit (H11AA814)
1
2
4
3
ANODE
CATHODE
COLLECTOR
EMITTER
Equivalent Circuit (H11A817)
1
4
2
3
4PIN PHOTOTRANSISTOR OPTOCOUPLERS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
INPUT DIODE
Forward voltage
H11A817
V
F
1.2
1.5
V
I
F
= 20 mA
H11AA814
V
F
1.2
1.5
V
I
F
= 20 mA
Reverse current
H11A817
I
R
.001
10
A
V
R
= 5 V
OUTPUT TRANSISTOR
Breakdown voltage
Collector to emitter
BV
CEO
35
100
V
I
C
= 1 mA, I
F
= 0
Emitter to collector
BV
ECO
6
10
V
I
E
= 100 A, I
F
= 0
Collector dark current
I
CEO
.025
100
nA
V
CE
= 10 V, I
F
= 0
Capacitance
C
CE
8
pF
V
CE
= 0 V, f = 1 MHz
ELECTRO-OPTICAL CHARACTERISTICS
(T
A
= 25 C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
(Applies to all unless indicated otherwise)
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
DC current transfer ratio
H11AA814
CTR
20
300
%
I
F
= 1 mA,V
CE
= 5V
H11AA814A
CTR
50
150
%
I
F
= 1 mA,V
CE
= 5V
H11A817
CTR
50
600
%
I
F
= 5 mA,V
CE
= 5V
H11A817A
CTR
80
160
%
H11A817B
CTR
130
260
%
H11A817C
CTR
200
400
%
H11A817D
CTR
300
600
%
Saturation Voltage
V
CE (SAT)
0.1
0.2
V
I
F
= ()20 mA, I
C
= 1 mA
Rise time (non saturated)
t
r
2.4
18
s
I
C
= 2 mA, V
CE
= 2 V,
R
L
= 100
Fall time (non saturated)
t
f
2.4
18
s
I
C
= 2 mA, V
CE
= 2 V,
R
L
= 100
TRANSFER CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Steady-state isolation voltage V
ISO
5300
V
RMS
1 Minute
Isolation resistance
R
ISO
10
11
V
I-O
= 500 VDC
Isolation capacitance
C
ISO
0.5
pF
V
I-O
= , f = 1 MHz
ISOLATION CHARACTERISTICS
4PIN PHOTOTRANSISTOR OPTOCOUPLERS
TYPICAL CHARACTERISTICS
FIG. 2 - Normalized CTR vs. Ambient Temperature
FIG. 1 - Normalized CTR vs. Forward Current
FIG. 3 - V
CE (SAT)
vs. Ambient Temperature
FIG. 4 - Forward Voltage vs. Forward Current
NORMALIZED CTR
CTR Normalized @ I
F
= 5 mA, V
CE
= 5 V, Ta = 25
C
FORWARD CURRENT I
F
(mA)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
30
V
CE ( SAT)
(V)
.14
.12
.1
.08
.06
.04
.02
0
-50
-25
0
25
50
75
100
125
I
F
= 20 mA
I
C
= 1 mA
AMBIENT TEMPERATURE (
C)
FORWARD VOLTAGE V
F
(V)
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.1
0.2
0.5
1.0
2.0
5
10
20
50
100
FORWARD CURRENT I
F
(mA)
T = 100
C
T = -55
C
T = -25
C
NORMALIZED CTR
1.2
1
0.8
0.6
0.4
-50
-25
0
+25
+50
+75
+100
CTR Normalized @ I
F
= 5 mA, V
CE
= 5 V, Ta = 25
C
I
F
= 5 mA
AMBIENT TEMPERATURE (
C)
I
F
= 10 mA
4PIN PHOTOTRANSISTOR OPTOCOUPLERS
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786
s
France 33 01/43.99.25.12
s
Germany 49 089/96.30.51
s
United Kingdom 44 [0] 1296/39.44.99
s
Asia/Pacific 603/735-2417
1996 QT Optoelectronics
QT-012-A
DS 104
TYPICAL CHARACTERISTICS
COLLECTOR CURRENT I
C
(mA)
COLLECTOREMITTER VOLTAGE V
CE
(V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5 mA
I
F
= 1 mA
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
0
25
50
75
100
125
I
CEO
(
A)
AMBIENT TEMPERATURE (
C)
V
CE
= 10 V
I
F
= 5 mA
V
CC
= 5 V
T
a
= 25
C
1000
100
10
1
0.1
0.1
1
100
10
SWITCHING SPEED
(
S)
R-LOAD RESISTOR (k
)
T
off
T
on
T
f
T
r
FIG. 5 - Collector Current vs. Collector-Emitter Voltage
FIG. 6 - Collector Leakage Current vs. Ambient Temperature
FIG. 7 - Switching Speed vs. Load Resistor (TYP)
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