ChipFind - документация

Электронный компонент: QED122

Скачать:  PDF   ZIP
0.195 (4.95)
0.040 (1.02)
NOM
0.100 (2.54)
NOM
0.050 (1.25)
0.800 (20.3)
MIN
0.305 (7.75)
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
REFERENCE
SURFACE
CATHODE
1. Derate power dissipation linearly 2.67
mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are
recommended as cleaning agents.
4. Soldering iron
1/16"
(1.6mm) minimum
from housing.
1 of 2
100021B
PACKAGE DIMENSIONS
FEATURES
!
= 880 nm
Chip material = AlGaAs
Package type: T-1 3/4 (5mm lens diameter)
Matched Photosensor: QSD122/123/124
Narrow Emission Angle, 18
High Output Power
Package material and color: Clear, peach tinted, plastic
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-40 to +100
C
Storage Temperature
T
STG
-40 to +100
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
C
Continuous Forward Current
I
F
50
mA
Reverse Voltage
V
R
5
V
Power Dissipation
(1)
P
D
200
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
ANODE
CATHODE
SCHEMATIC
QED121/122/123
PLASTIC INFRARED LIGHT EMITTING DIODE
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Peak Emission Wavelength
I
F
= 100 mA
!
PE
--
880
--
nm
Emission Angle
I
F
= 100 mA
"
--
9
--
Deg.
Forward Voltage
I
F
= 100 mA, tp = 20 ms
V
F
--
--
1.7
V
Reverse Current
V
R
= 5 V
I
R
--
--
10
A
Radiant Intensity QED121
I
F
= 100 mA, tp = 20 ms
I
E
20
--
40
mW/sr
Radiant Intensity QED122
I
F
= 100 mA, tp = 20 ms
I
E
50
--
100
mW/sr
Radiant Intensity QED123
I
F
= 100 mA, tp = 20 ms
I
E
80
--
--
mW/sr
Rise Time
I
F
= 100 mA
t
r
--
800
--
ns
Fall Time
t
f
--
800
--
ns
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C)
2 of 2
100021B
QED121/122/123
PLASTIC INFRARED LIGHT EMITTING DIODE
Normalized to:
I
F
= 100 mA, T
A
= 25C
Pulse Width = 100 s
10
1
1
10
NORMALIZED RADIANT INTENSITY
I
F
- INPUT CURRENT (mA)
Fig. 1 Normalized Radiant Intensity vs. Input Current
100
1000
0.1
0.01
0.001
NORMALIZED COLLECT
OR CURRENT
LENS TIP SEPERATION (INCHES)
Fig. 2 Coupling Characteristics of QED12X and QSD12X
0
1
1
0.8
0.6
0.4
0.2
0
2
3
4
5
6
Normalized to:
Pulse Width = 100 s
Duty Cycle = 0.1%
V
CC
= 5 V
R
L
= 100
#
T
A
= 25C
I
F
= 100 mA
I
F
= 20 mA
2.5
2
1.5
1
0.5
-30
-40
-20
-10
0
10
20
30
40
50
60
70
80
90
100
0
V
F
- FOR
W
ARD
V
O
L
T
A
GE (V)
T
A
- TEMPERATURE (C)
Fig. 3 Forward Voltage vs. Temperature
I
F
= 10 mA
I
F
= 50 mA
I
F
= 20 mA
I
F
= 100 mA
Pulse Width = 100 s
Duty Cycle = 0.1%
Fig. 5 Radiation Pattern
Fig. 4 Normalized Radiant Intensity vs. Wavelength
!
(nm)
775
800
825
850
875
900
925
950
NORMALIZED RADIANT INTENSITY
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
20
40
60
80
100
0
20
40
60
80
100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
TYPICAL PERFORMANCE CURVES