Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised June 27, 2003
Page 1
www.raytheonrf.com
Specifications are based on most current or latest revision.
PRODUCT INFORMATION
RMBA19500-58 - PCS 2 Watt Linear GaAs
MMIC Power Amplifier
RF Components
Description
!
2 Watt Linear output power at 36 dBc ACPR1 for CDMA
operation
!
Small Signal Gain of >28 dB
!
Small outline SMD package
Features
Electrical
Characteristics
2
The RMBA19500 is a highly linear Power Amplifier. The circuit uses Raytheon RF Components'
pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output
stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity
requirements for CDMA operation.
Absolute
Ratings
Parameter
Symbol
Value
Units
Drain Supply Voltage
1
V
D
+10
Volts
Gate Supply Voltage
V
G
-5
Volts
RF Input Power (from 50
source)
P
RF
+5
dBm
Operating Case Temperature Range
T
C
-30 to +85
C
Storage Temperature Range
T
S
-40 to +100
C
Parameter
Min
Typ
Max Unit
Frequency Range
1930
1990 MHz
Gain (small signal)
Over 1930-1990 MHz
30
dB
Gain variation:
Over frequency range
+/-1
dB
Over temperature range
+/- 1.5
dB
Noise Figure
6
dB
Linear output power:
for CDMA
3
33
dBm
Parameter
Min
Typ
Max Unit
OIP3
4
42.5
dBm
PAE@33 dBm Pout
24
%
Input VSWR (50
)
2:1
Drain Voltage (Vdd)
7.0
Volts
Gate Voltage
(VG1,2 and VG3)
5
-2
-0.25 Volts
Quiescent currents
(I
DQ1
,
2
, I
DQ3
)
5
180, 445
mA
Thermal Resistance
(Channel to Case) Rjc
11
C/W
Notes:
1. Only under quiescent conditions no RF applied.
2. V
DD
= 7.0V, T
c
= 25C. Part mounted on evaluation board with input and output matching to 50 Ohms.
3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the
average power within the 1.23 MHz channel at band center to the average power within a 30 KHz bandwidth at an 885
KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.
4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at
band-center with adjusted supply and bias conditions of Vdd=6.5V and IdqTotal=625mA (see Note 5).
5. VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to achieve
IDQTOTAL=625mA can be used with nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have been
optimized for CDMA operation. IDQ1,2 and IDQ3 (or IDQTOTAL) can be adjusted to optimize the linearity of the amplifier
for other modulation systems.
The device requires external input and output matching to 50 Ohms as shown in Figure 3 and the
Parts List.
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised June 27, 2003
Page 2
www.raytheonrf.com
Specifications are based on most current or latest revision.
PRODUCT INFORMATION
RMBA19500-58 - PCS 2 Watt Linear GaAs
MMIC Power Amplifier
RF Components
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
The following describes a procedure for evaluating the RMBA19500-58, a monolithic high efficiency
power amplifier, in a surface mount package, designed for use as a driver stage for PCS Base station
or as the final output stage for Micro- and Pico-Cell base stations. Figure 1 shows the package outline
and the pin designations. Figure 2 shows the functional block diagram of the packaged product. The
RMBA19500-58 requires external passive components for DC bias and RF input/output matching
circuits. A recommended schematic circuit is shown in Figure 3. The gate biases for the three stages of
the amplifier may be set by simple resistive voltage dividers. Figure 4 shows a typical layout of an
evaluation board, corresponding to the schematic circuits of figure 3. The following designations should
be noted:
Application
Information
(1) Pin designations are as shown in figure 2.
(2) Vg1, Vg2 and Vg3 are the Gate Voltages
(negative) applied at the pins of the package
(3) Vgg1, Vgg2 and Vgg3 are the negative supply
voltages at the evaluation board terminals
(Vg1and Vg2 are tied together)
(4) Vd1, Vd2 and Vd3 are the Drain Voltages
(positive) applied at the pins of the package
(5) Vdd is the positive supply voltage at the
evaluation board terminal (Vd1, Vd2 and Vd3
are tied together)
Note: The base of the package must be soldered
on to a heat sink for proper operation.
Figure 1
12 Lead Plastic Air
Cavity Package with
Integral Heat Sink
RF Out & Vd3
RF Out & Vd3
RF Out & Vd3
VD1
GND
VG1
RF In
GND
VG2
VD2
GND
VG3
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
Description
Pin #
Dimensions in inches
10
11
1
2
3
4 5 6
7
8
9
12
BOTTOM VIEW
TOP VIEW
10
11
0.030
A
0.015
1
2
3
4
5
6
7
8
9
12
0.200 SQ.
RAY
RMBA
19500
0.041
13
PLASTIC LID
SIDE SECTION
0.075 MAX.
0.010
0.230
0.246
0.282
Figure 2
Functional Block
Diagram of
Packaged Product
Vg1
Pin# 6
Vg2
Pin# 9
Vd1
Pin# 4
Vd2
Pin# 10
GND
Pin# 5, 8, 11, 13
Vg3
Pin# 12
RF IN
Pin# 7
RF OUT & Vd3
Pin# 1, 2, 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised June 27, 2003
Page 3
www.raytheonrf.com
Specifications are based on most current or latest revision.
PRODUCT INFORMATION
RMBA19500-58 - PCS 2 Watt Linear GaAs
MMIC Power Amplifier
RF Components
Figure 3
Schematic of
Application Circuit
showing external
components
Figure 4
Layout of Test
Evaluation Board
(RMBA19500-58-TB,
G655971)
J1
RF Input
J2
RF Output
GNDVG1,2GND
GND
GND
VG3
VDD
G655971
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised June 27, 2003
Page 4
www.raytheonrf.com
Specifications are based on most current or latest revision.
PRODUCT INFORMATION
RMBA19500-58 - PCS 2 Watt Linear GaAs
MMIC Power Amplifier
RF Components
Parts List
or Test Evaluation Board
(RMBA19500-58-TB,
G6655971)
Part
Value
Size (EIA)
Vendor(s)
L1, L2,L4
5.6 nH
.06" x .03"
Toko (LL1608-F5N6)
L3
10 nH
.085" x .060"
Coilcraft (0805HT-10NTKBC)
C1
10 pF
.067" x .036"
Murata(GRM39COG100J050AD)
C9
2.2 pF
.042" x .022"
Murata(GRM36COG2R2J050BD)
C3, C4, C5
1500 pF
.067" x .036"
Murata (GRM39Y5V152Z50V)
C10
2.0 pF
Murata(GRM36COG2R20J050BD)
C2
15.0 pF
.042" x .022"
Murata(GRM36COG150J050)
C8,C11,C14,C15 4.7 uF
.134" x .071"
TDK (C3216XR1A475KT)
C6,C7
0.1 uF
.183" x .054"
Murata (GRM39Y5V104Z50)
R1,R5
20 Ohms
.069" x .037"
IMS (RCI-0603-20R0J)
R2,R7
1000 Ohms
.069" x .037"
IMS (RCI-0603-1001J)
R3
910 Ohms
.069" x .037"
IMS (RCI-0603-9100J)
R4
30 Ohms
.069" x .037"
IMS (RCI-0603-30R0J)
R6
1.1K Ohms
.069" x .037"
IMS (RCI-0603-1101J)
R8
390 Ohms
IMS (RCI-0603-3900J)
R9
300 Ohms
IMS (RCI-0603-3000J)
U1
RMBA19500-58
.31" x .41"
Raytheon
HS
Heatsink
Raytheon, G655548
P1
Terminals
3M (2340-5211TN)
J1, J2
SMA Connectors
E.F. Johnson (142-0701-841)
Board FR4
Raytheon Dwg#
G654187/G654941
Thermal
Considerations
for Heat Sinking the
RMBA19500-58
The PWB must be prepared with either an embedded copper slug in the board where the package is to
be mounted or a heat sink should be attached to the backside of the PWB where the package is to be
mounted on the front side. The slug or the heat sink should be made of a highly electrically and
thermally conductive material such as copper or aluminum. The slug should be at least the same
thickness as the PWB. In the case of the heat sink, a small pedestal should protrude through a hole in
the PWB where the package bottom is directly soldered. In either configuration, the top surface of the
slug or the pedestal should be made coplanar with the package lead mounting plane i.e., the top
surface of the PWB.
Use Sn96 solder (96.5% Sn and 3.5% Ag) at 220C for 20 seconds or less to
attach the heat sink to the backside of the PWB. Then, using Sn63, the package bottom should be
firmly soldered to the slug or the pedestal while the pins are soldered to the respective pads on the front
side of the PWB without causing any stress on the pins. Remove flux completely if used for soldering.
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2, VG3) WHILE CORRESPONDING DRAIN
VOLTAGES (Vdd) ARE PRESENT CAN DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test the amplifier. (It is necessary to add a fan to
provide air cooling across the heat sink of RMBA19500.)
Test Procedure
for the evaluation board
(RMBA19500-58-TB)
Step 1: Turn off RF input power.
Step 2: Use GND terminal of the evaluation board
for the ground of the DC supplies. Set
Vgg1, Vgg2 and Vgg3 to -3V (pinch-off).
Step 3: Slowly apply drain supply voltages of +7 V
to the board terminal Vdd ensuring that
there is no short.
Step 4: Adjust Vgg12 down from -3V until the
drain current (with no RF applied)
increases to Idq12 as per supplied result
sheet. Then adjust Vgg3 until the total
drain current becomes equal to the sum of
Idq12 and Idq3.
Step 5: After the bias condition is established, RF
input signal may now be applied at the
appropriate frequency band and
appropriate power level.
Step 6: Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltage Vdd.
(iii) Turn down and off gate voltages Vgg1,
Vgg2 and Vgg3.
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