Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised June 27, 2003

Page 1

www.raytheonrf.com

Specifications are based on most current or latest revision.

PRODUCT INFORMATION

RMBA19500A-58
PCS1900 2 Watt GaAs MMIC Power Amplifier

RF Components

The RMBA19500A-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF
Components' pHEMT process. It has been designed for use as a driver stage for PCS1900 base
stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized
for high linearity requirements for PCS operation.

Description

Absolute

Ratings

Electrical

Characteristics

2 Watt linear output power at 36 dBc ACPR1 for CDMA operation

OIP3

43 dBm at 27 and 30 dBm output

Small Signal Gain of >30 dB

Small outline SMD package

Features

Parameter

Symbol

Value

Unit

Drain Supply Voltage

+10

Volts

Gate Supply Voltage (max absolute value)

-5

Volts

RF Input Power (from 50

source)

dBm

Operating Case Temperature Range

-30 to +85

°C

Storage Temperature Range

Tstg

-40 to +100

°C

Parameter

Min

Typ

Max

Unit

Frequency Range

1930

1990 MHz

Gain (small signal)

Over 1930-1990 MHz

Gain variation:

Over frequency range

+/- 1.0

Over temperature range

+/- 1.5

Noise Figure

P1dB Output

dBm

Output Power @ CDMA

dBm

Parameter

Min

Typ

Max

Unit

PAE@33 dBm Pout

OIP3

dBm

Drain Voltage (Vdd)

7.0

Volts

Gate Voltage

(VG1,2 and VG3)

-2

-0.25 Volts

Quiescent currents

180,

(Idq1,2 and Idq3)

445

Thermal Resistance

(Channel to Case)

Rjc

°C/W

Notes:
1. Only under quiescent conditions no RF applied.
2. V

= 7.0V, T

= 25°C. Part mounted on evaluation board with input and output matching to 50 Ohms.

3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the

average power within the 1.23 MHz channel at band center to the average power within a 30 KHz bandwidth at an 885
KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.

4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at

band-center with adjusted supply and bias conditions of Vdd=6.5V and IdqTotal=625mA (see Note 5).

5. VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to

achieve IDQTOTAL=625mA can be used with nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have
been optimized for CDMA operation. IDQ1,2 and IDQ3 (or IDQTOTAL) can be adjusted to optimize the linearity of the
amplifier for other modulation systems.

The device requires external input and output matching to 50 Ohms as shown in Figure 3 and the

Parts List.

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised June 27, 2003

Page 2

www.raytheonrf.com

Specifications are based on most current or latest revision.

PRODUCT INFORMATION

RMBA19500A-58
PCS1900 2 Watt GaAs MMIC Power Amplifier

RF Components

CAUTION: THIS IS AN ESD SENSITIVE DEVICE

The following describes a procedure for evaluating the RMBA19500A-58, a monolithic high efficiency
power amplifier, in a surface mount package, designed for use as a driver stage for PCS1900 Base
station or as the final output stage for Micro- and Pico-Cell base stations.

Figure 1 shows the

package outline and the pin designations.

Figure 2 shows the functional block diagram of the

packaged product. The RMBA19500A-58 requires external passive components for DC bias and RF
input and output matching circuits as shown in Figure 3 and the Parts List. A recommended schematic
circuit is shown in Figure 3. The gate biases for the three stages of the amplifier may be set by simple
resistive voltage dividers. Figure 4 shows a typical layout of an evaluation board, corresponding to
the schematic circuits of figure 3. The following designations should be noted:

(1) Pin designations are as shown in figure 2.
(2) Vg1, Vg2, and Vg3 are the Gate Voltages (negative) applied at the pins of the package.
(3) Vgg1, 2, and Vgg3 are the negative supply voltages at the evaluation board terminals (Vg1 and
Vg2 are tied together).
(4) Vd1, Vd2, and Vd3 are the Drain Voltages (positive) applied at the pins of the package.
(5) Vdd is the positive supply voltage at the evaluation board terminal (Vd1, Vd2, and Vd3 are tied
together).

Note: The base of the package must be soldered on to a heat sink for proper operation.

Application

Information

Figure 1

Package Outline

and Pin

Designations

Dimensions in inches

Pin#

Description

RF Out &Vd3

Vd1

GND

Vg1

RF In

GND

Vg2

Vd2

GND

Vg3

GND

PLASTIC LID

SIDE SECTION

0.075 MAX.

0.010

0.230
0.246
0.282

12 11

0.041

0.015

0.200 SQ.

TOP VIEW

BOTTOM VIEW

5 4

0.030

RAY

RMBA

19500A

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised June 27, 2003

Page 4

www.raytheonrf.com

Specifications are based on most current or latest revision.

PRODUCT INFORMATION

RMBA19500A-58
PCS1900 2 Watt GaAs MMIC Power Amplifier

RF Components

Step 1: Turn off RF input power.

Step 2: Use GND terminal of the evaluation

board for the ground of the DC supplies.
Set Vgg1, 2 and Vgg3 to -4V (pinch-off).

Step 3: Slowly apply drain supply voltages of +5

V to the board terminal Vdd ensuring that
there is no short.

Step 4: Adjust Vgg3 up from -3V until the drain

current (with no RF applied) increases to
Idq3 as per supplied result sheet. Then
adjust Vgg1, 2 until the total drain current
becomes equal to the sum of Idq1, 2 and
Idq3.

Test Procedure

for the evaluation

board (RMBA19500A-

58-TB)

CAUTION: LOSS OF GATE VOLTAGES (Vg1, Vg2, Vg3) WHILE CORRESPONDING DRAIN
VOLTAGES (Vdd) ARE PRESENT CAN DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test the amplifier. (It is necessary to add a fan to
provide air cooling across the heat sink of RMBA19500A.)

Step 5: After the bias condition is established,

RF input signal may now be applied at
the appropriate frequency band and
appropriate power level.

Step 6:

Follow turn-off sequence of:

(i) Turn off RF Input Power

(ii) Turn down and off drain voltage
Vdd.

(iii) Turn down and off gate voltages
Vgg1, 2 and Vgg3.

J1
RF Input

J2
RF
Output

HS (Heat-sink is attached

under base of RMBA19500A-58)

GND Vg1,2 GND

Vg3

GND

Vdd

GND

Figure 4

Layout of Test

Evaluation Board

(RMBA19500A-58-TB,

G655971)

G655971

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised June 27, 2003

Page 5

www.raytheonrf.com

Specifications are based on most current or latest revision.

PRODUCT INFORMATION

RMBA19500A-58
PCS1900 2 Watt GaAs MMIC Power Amplifier

RF Components

Parts List

for Test Evaluation

Board (RMBA19500A-

58-TB,

G654188/G654942)

Part

Value

EIA Size

Vendor(s)

L1, L2,L4

5.6 nH

.06" x .03"

Toko (LL1608-F5N6)

10 nH

.085" x .060"

Coilcraft (0805HT-10NTKBC)

10 pF

.067" x .036"

Murata(GRM39COG100J050AD)

2.2 pF

.042" x .022"

Murata(GRM36COG2R2J050BD)

C3, C4, C5

1500 pF

.067" x .036"

Murata (GRM39Y5V152Z50V)

C10

2.0 pF

Murata(GRM36COG2R20J050BD)

15.0 pF

.042" x .022"

Murata(GRM36COG150J050)

C8,C11,C14,C15

4.7 uF

.134" x .071"

TDK (C3216XR1A475KT)

C6,C7

0.1uF

.183" x .054"

Murata (GRM39Y5V104Z50)

R1,R5

20 Ohms

.069" x .037"

IMS (RCI-0603-20R0J)

R2,R7

1000 Ohms

.069" x .037"

IMS (RCI-0603-1001J)

910 Ohms

.069" x .037"

IMS (RCI-0603-9100J)

30 Ohms

.069" x .037"

IMS (RCI-0603-30R0J)

1.1K Ohms

.069" x .037"

IMS (RCI-0603-1101J)

390 Ohms

IMS (RCI-0603-3900J)

300 Ohms

IMS (RCI-0603-3000J)

RMBA19500-58

.31" x .41"

Raytheon

Heatsink

Raytheon, G655548

Terminals

3M (2340-5211TN)

J1, J2

SMA Connectors

E.F. Johnson (142-0701-841)

Board

FR4

Raytheon Dwg#
G654187/G654941

The PWB must be prepared with either an embedded copper slug in the board where the package is to
be mounted or a heat sink should be attached to the backside of the PWB where the package is to be
mounted on the front side. The slug or the heat sink should be made of a highly electrically and
thermally conductive material such as copper or aluminum. The slug should be at least the same
thickness as the PWB. In the case of the heat sink, a small pedestal should protrude through a hole in
the PWB where the package bottom is directly soldered. In either configuration, the top surface of the
slug or the pedestal should be made coplanar with the package lead mounting plane i.e., the top surface
of the PWB.

Use Sn96 solder (96.5% Sn and 3.5% Ag) at 220ºC for 20 seconds or less to attach the

heat sink to the backside of the PWB. Then, using Sn63, the package bottom should be firmly soldered
to the slug or the pedestal while the pins are soldered to the respective pads on the front side of the
PWB without causing any stress on the pins. Remove flux completely if used for soldering.

Thermal

Considerations

for Heat Sinking the

RMBA19500A-58

Raytheon RF Components

362 Lowell Street

Andover, MA 01810

Revised June 27, 2003

Page 6

www.raytheonrf.com

Specifications are based on most current or latest revision.

PRODUCT INFORMATION

RMBA19500A-58
PCS1900 2 Watt GaAs MMIC Power Amplifier

RF Components

Performance

Data

RMBA19500A OIP3 vs Power Output per Tone

1.960 Ghz, 25

C, Vd=7.0V

OIP3
(dBm)

Output Power per Tone (dBm)

31.2

31.4

31.6

31.8

32.2

32.4

32.6

31.5

Gain vs Power Output per Tone

1.960 Ghz, 25

C, Vd=7.0V

Gain
(dB)

Power Output per Tone (dBm)

43.5

44.5

45.5

46.5

47.5

48.5

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