Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 16, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Description
32 dB small signal gain (typ.)
21 dBm saturated power out (typ.)
Circuit contains individual source Vias
Chip Size 2.79 mm x 1.63 mm
Features
The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to
multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs
MMIC amplifier utilizing Raytheon's advanced 0.15
m gate length P ower P HEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
Parameter
Min
Typ
Max
Unit
Frequency Range
23
28
GHz
Gate Supply Voltage
1
(Vg)
-0.4
V
Gain Small Signal
27
32
36
dB
Gain Variation vs.
Frequency
+/-2
dB
Power Output at 1 dB
Compression
22
dBm
Power Output Saturated:
(Pin=-5 dBm)
23
dBm
Parameter
Min
Typ
Max
Unit
Drain Current at
Pin=-5 dBm
250
mA
Drain Current at
P1 dB Compression
270
mA
Power Added Efficiency
(PAE): at P1dB
10
%
OIP3
29
dBm
Input Return Loss
3
10
dB
Output Return Loss
7
8
dB
Absolute
Maximum
Ratings
Parameter
SymbolVal
ue
Unit
Positive DC Voltage (+5 V Typical)
Vd
+ 6
Volts
Negative DC Voltage
Vg
- 2
Volts
Simultaneous (Vd - Vg)
Vdg
+ 8
Volts
Positive DC Current
I
D
360
mA
RF Input Power (from 50
source)
P
IN
+10
dBm
Operating Base plate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
Stg
-55 to +125
C
Thermal Resistance
R
jc
44
C/W
(Channel to Backside)
Note:
1.
Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 250 mA.
Electrical
Characteristics
(At 25C)
50
system, Vd=+5 V,
Quiescent current
(Idq)=250 mA
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Application
Information
RMDA25000
23-28 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 16, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
0.658
1.028
0.843
0.0
0.115
0.0
1.895
2.614 2.794
1.452
1.629
0.115
1.303
2.614
0.177
Figure 3
Recommended
Application Schematic
Circuit Diagram
Figure 2
Chip Layout and Bond Pad
locations.
Chip size is 2.79 mm x
1.63 mm x 50
m. Back of
chip is RF and DC ground.
Dimensions in mm
Figure 1
Functional Block
Diagram
RF IN
RF OUT
Gate Supply Vg
Ground (Back of Chip)
MMIC Chip
Drain Supply Vd
RF IN
RF OUT
Drain Supply
(Vd= +5 V)
Gate Supply
(Vg)
Ground
(Back of Chip)
MMIC Chip
100pF
10000pF
10000pF
Bond Wire Ls
Bond Wire Ls
100pF
100pF
100pF
100pF
100pF
RMDA25000
23-28 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 16, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Figure 4
Recommended
Assembly Diagram
Note:
Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Vd should
biased from 1 supply as shown. Vg should be biased from 1 supply.
Vd (Positive)
100pF
100pF
10000pF
10000pF
RF
Input
RF
Output
Alumina
50-Ohm
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
100pF
100pF
100pF
100pF
Recommended
Procedure for
Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground of
the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=250 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage (Vg).
An example auto bias sequencing circuit to apply
negative gate voltage and positive drain voltage for the
above procedure is shown below.
Vg (Negative)
RMDA25000
23-28 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 16, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Performance
Data
0
5
10
15
20
25
-25
-20
-15
-10
-5
0
5
Input Power Drive (dBm)
Po
ut
(
dB
m)
RMDA25000 Power Out Vs. Power In
Frequency = 26 GHz, Bias Vd=5 V, Id=250 mA, T=25 C
26
28
30
32
34
36
21
22
23
24
25
26
27
28
29
30
Frequency (GHz)
S2
1
Ma
g (
d
B)
RMDA25000 S21 Vs. Frequency
Bias Vd=5 V, Id=250 mA, T=25 C
RMDA25000
23-28 GHz Driver Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 16, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Performance
Data
-25
-20
-15
-10
-5
0
21
22
23
24
25
26
27
28
29
30
Frequency (GHz)
S2
2
Ma
g (
d
B)
RMDA25000 S22 Vs. Frequency
Bias Vd=5 V, Id=250 mA, T=25 C
-25
-20
-15
-10
-5
0
21
22
23
24
25
26
27
28
29
30
Frequency (GHz)
S1
1
Ma
g (
d
B)
RMDA25000 S11 Vs. Frequency
Bias Vd=5 V, Id=250 mA, T=25 C
RMDA25000
23-28 GHz Driver Amplifier MMIC
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