Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
Revised November 14, 2001
Page 1
Characteristic performance data and specifications are subject to change without notice.
www.raytheonrf.com
Description
MHEMT
High bandwidth: 40 GHz
Low group delay
Low power dissipation: ~450mW.
Single ended output
DC coupled
Effective wideband gain stage
Chip size 3.71 mm x 1.70 mm
Features
The Raytheon RF Components RMLA00400 is a very high speed Transimpedance Amplifier (TIA) MMIC for 40 Gb/s
(OC768) fiber optic systems. It is available in die form, and is manufactured using Raytheon RF Components'
advanced MHEMT process. The TIA is used in conjunction with a photodetector to convert optical signals into a
voltage output, or as a general purpose low noise wideband gain stage.
RMLA00400
40 Gb/s Transimpedance Amplifier
Electrical
Characteristics
2,3
Parameter
Min
Typ
Max
Unit
Frequency Bandwidth (1 dB)
40
GHz
Frequency Bandwidth (3 dB)
45
GHz
Low frequency Cut-off
30
KHz
Gain
16
dB
Gain Flatness
0.75
dB
Transimpedance
300
Ohms
Group Delay
30
pS p-p
Noise Figure
2.5
dB
Parameter
Min
Typ
Max
Unit
Output Voltage
400
mV p-p
Output Return Loss
15
dB
Quiescent Current
130
mA
Input Noise Current Density
25
pA/
Hz
Vd
3.5
V
Vg
1
-3.5
V
Vg
2
2.5
V
Case Operating Temp
-40
+85
C
Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. All parameters met at Tc = 25C, Vd = 3.5V.
3. Measured in a 50 ohm system.
Absolute
Ratings
1
Parameter
Symbol
Value
Unit
Supply Voltage
Vd
+3.5
V
RF Input Power
Pin
-10
dBm
Case Operating Temperature
Tc
-40 to +85
C
Storage Temperature
Tstg
-40 to +100
C
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
Revised November 14, 2001
Page 2
Characteristic performance data and specifications are subject to change without notice.
www.raytheonrf.com
RMLA00400
40 Gb/s Transimpedance Amplifier
Figure 1
Functional Block
Diagram
Vg1 Vg2
Vd
RFin
RFout
Figure 2
Recommended
Application Schematic
Circuit Diagram
Vg1
Vd=Vg2=+3.5 V
RFin
RFout
100 pF
10,000 pF
L
Photodetector
Vb
R=125
Vg2
Vd
L= Bond Wire
L
100 pF
10,000 pF
Figure 3
Chip Layout and
Bond Pad Locations
(Chip Size=3.710
mm x 1.700 mm x
100 m Typical,
Back of Chip is RF
and DC Ground)
Dimensions in mm
0.0
0.887
1.219
3.710
3.602
0.0
0.147
0.981
1.137
1.288
2.702
0.301
0.0
0.454
1.264
1.545
1.700
0.607
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
Revised November 14, 2001
Page 3
Characteristic performance data and specifications are subject to change without notice.
www.raytheonrf.com
RMLA00400
40 Gb/s Transimpedance Amplifier
Vd, Vg2
(Positive)
Vg1
(Negative)
RF
Input
RF
Output
5 mil Thick
Alumina
50-Ohm
L< 0.015"
100pF
10000pF
C
Photodetector
Vb
~ 0.1F
125
100pF
10000pF
Figure 4
Recommended
Assembly Diagram
CAUTION: LOSS OF GATE VOLTAGE (Vg1) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier.
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier. Apply negative gate 1 bias
supply voltage of -5.0 V to Vg1.
Step 3: Apply positive bias supply voltage of +3.5 V to
Vd, Vg2 connection.
Step 4: Adjust gate 1 bias voltage Vg1 to set the
quiescent current of Idq ~ 130 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band. Adjust Vg1 for best
gain flatness.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd, Vg2),
(iii) Turn down and off gate bias voltage (Vg1).
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
Revised November 14, 2001
Page 4
Characteristic performance data and specifications are subject to change without notice.
www.raytheonrf.com
RMLA00400
40 Gb/s Transimpedance Amplifier
Performance
Data
0
5
10
15
20
0
10
20
30
40
50
Typical Measured Gain Response
Frequency (GHz)
|S21| (
dB)
Measured in a 50 ohm system
Gain & Noise Figure Vs. Frequency
Fixtured Measurement
0
5
10
15
20
0
2.5
5
7.5
10
0
5
10
15
20
25
30
35
40
Gain (dB
)
NF (dB
)
Frequency (GHz)
NF
Gain
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
ADVANCED INFORMATION
Revised November 14, 2001
Page 5
Characteristic performance data and specifications are subject to change without notice.
www.raytheonrf.com
RMLA00400
40 Gb/s Transimpedance Amplifier
Performance
Data
Power & Gain Vs. Frequency
with Input Power as a Parameter
-15
-10
-5
0
5
10
-5
0
5
10
15
20
0
5
10
15
20
25
30
35
40
Frequency (GHz)
Pout
(
dB
m
)
Gain
(
dB
)
Gain
Measured in a 50 ohm test system
Gain & Return Loss Vs. Frequency
Fixtured Measurement
Frequency (GHz)
0
5
10
15
20
-20
-15
-10
-5
0
0.01
0.1
1
10
100
Gain (dB
)
|S11|
and
|S2
2
| (dB)
Gain
Measured in a 50 ohm test system
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