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Электронный компонент: RMPA2453

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2004 Fairchild Semiconductor Corporation
May 2004
RMPA2453 Rev. C
RMPA2453
VOLTAGE
DETECTOR
BIAS
OUTPUT
MATCH
12
8
INPUT
MATCH
INT STG
MATCH
N/C
11
RF OUT
10
RF OUT
9
1
2
3
4
N/C
V
L
RF IN
RF IN
N/C
VC2
7
VDET
6
VDET REF
5
13
14
15
16
VM12
N/C
N/C
N/C
VC1
Backside Ground
RMPA2453
2.42.5 GHz InGaP HBT Linear Power Amplifier
General Description
The RMPA2453 power amplifier is designed for high
performance WLAN applications in the 2.4 2.5 GHz
frequency band. The low profile 16 pin 3 x 3 x 0.9 mm
package with internal matching on both input and output to
50
minimizes next level PCB space and allows for
simplified integration. The on-chip detector provides power
sensing capability while the logic control provides power
saving shutdown options. The PA's low power consumption
and excellent linearity are achieved using our InGaP
Heterojunction Bipolar Transistor (HBT) technology.
Features
26dB small signal gain
26.5dBm output power @ 1dB compression
2.5% EVM at 18dBm modulated output power
3.5% EVM at 19dBm modulated output power
3.3V single positive supply operation
Two power saving shutdown options (bias and logic
control)
Integrated power detector with 20dB dynamic range
Low profile 16 pin 3 x 3 x 0.9 mm leadless package
Internally matched to 50
and DC blocked RF input/
output
Optimized for use in 802.11b/g applications
Device
Functional Block Diagram
Pin
Description
1
V
L
(logic)
2
RF IN
3
RF IN
4
N/C
5
VC1
6
N/C
7
N/C
8
N/C
9
N/C
10
RF OUT
11
RF OUT
12
N/C
13
VC2
14
VDET
15
VDET REF
16
VM12
2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. C
RMPA2453
Absolute Ratings
1
Notes:
1:
No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values
Electrical Characteristics
1, 3
802.11g OFDM Modulation (RF framed with 176ms burst time 100ms
idle time) 54Mbps Data Rate 16.7MHz Bandwidth
Electrical Characteristics
3, 6
802.11b CCK Modulation (RF not framed) 11Mbps Data Rate
22.0MHz Bandwidth
Notes:
1:
VC1,VC2, VM12 = 3.3V, T
C
= 25C, PA is constantly biased, 50
system.
2:
Percentage includes system noise floor of EVM = 0.8%.
3:
EVM not measured 100% in production.
4:
P
OUT
measured at P
IN
corresponding to power detection threshold.
5:
Measured at P
IN
at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.
6:
VC1,VC2, VM12 = 3.3V, T
C
= 25C, P
OUT
= +23dBm, 50
system. Satisfies spectral mask.
7:
P
IN
is adjusted to point where spectral performance reaches maximum limit.
Symbol
Parameter
Ratings
Units
VC1, VC2
Positive Supply Voltage
5
V
IC1, IC2
Supply Current
IC1
IC2
120
700
mA
mA
VM12
Positive Bias Voltage
4.0
V
V
L
Logic Voltage
5
V
P
IN
RF Input Power
10
dBm
T
CASE
Case Operating Temperature
-40 to +85
C
T
STG
Storage Temperature
-55 to +150
C
Parameter
Min
Typ
Max
Units
Frequency 2.4
2.5
GHz
Supply Voltage
3.0
3.3
3.6
V
Gain
24.5
26
29
dB
Total Current @ 18dBm P
OUT
133
160
mA
Total Current @ 19dBm P
OUT
145
165
mA
EVM @ 18dBm P
OUT
2
2.5
3.5
3
%
EVM @ 19dBm P
OUT
2
3.5
4.5
3
%
Detector Output @ 19dBm P
OUT
515
600
mV
Detector Threshold
4
5.0
7.0
dBm
P
OUT
Spectral Mask Compliance
5
21.0
dBm
Parameter
Min
Typ
Max
Units
Frequency 2.4
2.5
GHz
Supply Voltage
3.0
3.3
3.6
V
Gain
24.5
26
29
dB
Total Current
250
mA
First Sidelobe Power
-40
dBc
Second Sidelobe Power
-55
dBc
Max P
OUT
Spectral Mask Compliance
7
24.0
dBm
2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. C
RMPA2453
Electrical Characteristics
1
Single Tone
Notes:
1:
VC1,VC2, VM12 = 3.3V, T
C
= 25C, 50
system.
2:
Bias current is included in the Total Quiescent Current.
3:
VL is set to Input Logic Level High for PA Off operation.
4:
Measured from Device On signal turn on (Logic Low) to the point where RF P
OUT
stabilizes to 0.5dB.
5:
Load VSWR is set to 8:1 and the angle is varied 360 degrees. P
OUT
= -30dBm to P1dB.
Parameter
Min
Typ
Max
Units
Frequency 2.4
2.5
GHz
Supply Voltage
3.0
3.3
3.6
V
Gain
24.5
26
29
dB
Total Quiescent Current
105
135
mA
Bias Current at pin VM12
2
10.0
12.5
15.0
mA
P1dB Compression
25
26.5
dBm
Standby Current
3
0.7
mA
Shutdown Current (VM12 = 0V)
<1.0
A
Input Return Loss
19
dB
Output Return Loss
22
dB
Detector Output at P1dB Comp
2.0
V
Detector P
OUT
Threshold
7.0
9.0
dBm
2nd Harmonic Output at P1dB
-45
dBc
3rd Harmonic Output at P1dB
-42
dBc
Logic
Shutdown Control (V
L
):
Device Off, Logic High Input
2.0
2.4
V
Device On, Logic Low Input
0.0
0.8
V
Logic Current
150
A
Turn-on Time
4
<1
S
Turn-off Time
<1
S
Spurious (Stability)
5
-65
dBc
2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. C
RMPA2453
Typical Characteristics
802.11g
Temperature dependency
Left column VM12 = 3.3V
Right column VM12 = 3.0V
Note:
1:
Uncorrected EVM. Source EVM is approximately 0.8%.
Typical EVM
(1)
versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.0V, Vc1=3.3V, Vc2=3.3V
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
To
t
a
l
E
VM
(
%
)
+25C
-40C
+85C
Typical Total Current vs. Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.0V, Vc1=3.3V, Vc2=3.3V
20
40
60
80
100
120
140
160
180
200
220
240
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
To
t
a
l
C
ur
r
e
nt
(
m
A
)
+25C
-40C
+85C
Typical Gain versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.0V, Vc1=3.3V, Vc2=3.3V
20
21
22
23
24
25
26
27
28
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
Ga
i
n
(
d
B
)
+25C
-40C
+85C
Typical EVM
(1)
versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
Tota
l
E
V
M
(%)
+25C
-40C
+85C
Typical Total Current vs. Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
20
40
60
80
100
120
140
160
180
200
220
240
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
Tot
al
C
u
r
r
e
nt
(
m
A
)
+25C
-40C
+85C
Typical Gain versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
20
21
22
23
24
25
26
27
28
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
Ga
i
n
(
d
B
)
+25C
-40C
+85C
2004 Fairchild Semiconductor Corporation
RMPA2453 Rev. C
RMPA2453
Typical Characteristics
802.11g (Continued)
Temperature Dependency
Left column VM12 = 3.3V
Right column VM12 = 3.0V
Frequency Dependency VM12 = 3.3V
Typical VDET versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.0V, Vc1=3.3V, Vc2=3.3V
0
300
600
900
1200
1500
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
De
t
ect
o
r
O
u
t
p
u
t
VD
E
T
(
m
V)
+25C
-40C
+85C
Typical VDET versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
Frequency = 2.45GHz, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
0
300
600
900
1200
1500
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
De
t
e
c
t
o
r
O
u
t
p
ut
V
D
E
T
(m
V)
+25C
-40C
+85C
Typical EVM
(1)
versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
T
A
= 25
o
C, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
To
t
a
l
E
V
M
(
%
)
2.40GHz
2.45GHz
2.50GHz
Typical Total Current vs. Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
T
A
= 25
o
C, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
20
40
60
80
100
120
140
160
180
200
220
240
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
To
t
a
l
C
u
r
r
e
n
t
(
m
A
)
2.40GHz
2.45GHz
2.50GHz
Typical Gain versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
T
A
= 25
o
C, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
20
21
22
23
24
25
26
27
28
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
Ga
i
n
(
d
B
)
2.40GHz
2.45GHz
2.50GHz
Typical VDET versus Total Integrated Output Channel Power
54Mbps Data Rate OFDM 16.7MHz BW
T
A
= 25
o
C, Vm12=3.3V, Vc1=3.3V, Vc2=3.3V
0
300
600
900
1200
1500
0
2
4
6
8
10
12
14
16
18
20
22
24
26
Total Integrated Output Power (dBm)
De
te
c
t
o
r
Ou
tp
u
t
V
D
E
T
(m
V
)
2.40GHz
2.45GHz
2.50GHz
Note:
1:
Uncorrected EVM. Source EVM is approximately 0.8%.