Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised December 17, 2001
Page 1
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
18 dB small signal gain (typ.)
30 dBm saturated power output (typ.)
Circuit contains individual source vias
Chip Size 4.28 mm x 3.19 mm
Features
The Raytheon RMPA39100 is a high efficiency power amplifier designed for use in point to point radio, point to
multi-point communications, LMDS and other millimeter wave applications. The RMPA39100 is a 3-stage GaAs
MMIC amplifier utilizing Raytheon's advanced 0.15
m gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
Electrical
Characteristics
(At 25C)
50
system,
Vd=+5 V,
Quiescent current
(Idq)=1000 mA
Parameter
Min
Typ
Max Unit
Frequency Range
37
40
GHz
Gate Supply Voltage (Vg)
1
-0.2
V
Gain Small Signal at
Pin=0 dBm
16
18
dB
Gain Variation vs. Frequency
+/-1.5
dB
Power Output at
1 dB Compression
29
dBm
Power Output Saturated:
(Pin=+14.5 dBm)
28
30
dBm
Drain Current at Pin=0 dBm
1000
mA
Drain Current at
P1 dB Compression
1160
mA
Note: 1. Typical range of the negative gate voltages is -0.5 to 0.0V to set typical Idq of 1000 mA.
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Units
Positive DC Voltage (+5 V Typical)
Vd
+ 6
Volts
Negative DC Voltage
Vg
- 2
Volts
Simultaneous (Vd - Vg)
Vdg
+ 8
Volts
Positive DC Current
I
D
1392 mA
RF Input Power (from 50
source)
P
IN
+18
dBm
Operating Base plate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
Stg
-55 to +125
C
Thermal Resistance
R
jc
9
C/W
(Channel to Backside)
Parameter
Min
Typ
Max Unit
Drain Current at Psat
(Pin=+14.5 dBm)
1200
mA
Power Added Efficiency (PAE):
at P1dB
17
%
OIP3 (17dBm/Tone)
(10 MHz Tone Sep.)
35
dBm
Input Return Loss
(Pin=0 dBm)
10
dB
Output Return Loss
(Pin=0 dBm)
7
dB
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised December 17, 2001
Page 2
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mils gap between the chip and the substrate material.
Application
Information
Figure 1
Functional Block
Diagram
RF IN
RF OUT
Gate Supply
(VGA & VGB)
Drain Supply
(VDA & VDB)
Ground
(Back of Chip)
MMIC Chip
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=0.168" x
0.1256" x 0.002". Back
of Chip is
RF and DC Ground)
0.0558"
(1.417mm)
0.0699"
(1.777mm)
0.0628"
(1.597mm)
0.1178"
(2.994mm)
0.0
0.0078"
(.2mm)
0.0356"
(.9mm)
0.0745"
(1.893mm)
0.1159"
(2.944mm)
0.1595"
(4.052mm)
0.168"
(4.279mm)
0.0078"
(.2mm)
0.1256"
(3.190mm)
0.0
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised December 17, 2001
Page 3
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Vd
(Positive)
100pF
100pF
100pF
100pF
10,000pF
10,000pF
10,000pF
10,000pF
Vg
(Negative)
Vg
(Negative)
Vd
(Positive)
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
Figure 3
Schematic of
Application Circuit
Figure 4
Recommended
Assembly and Bonding
Diagram
Drain Supply (Vd= +5 V)
(Connect to both VDA & VDB)
Gate Supply (Vg)
(VGA and/or VGB)
RF IN
RF OUT
Ground
(Back of Chip)
MMIC Chip
100pF
10,000pF
L
L
Bond Wire Ls
10,000pF
L
100pF
Bond Wire Ls
L
Note: Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised December 17, 2001
Page 4
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT CAN DAMAGE THE
AMPLIFIER.
The following sequence must be followed to properly test the amplifier:
Recommended
Procedure
for biasing and
operation)
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=1000 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Note:
An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is
shown below.
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised December 17, 2001
Page 5
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
32
34
36
38
40
42
44
46
Frequency (GHz)
S21,
S11,
S22 (
d
B
)
S21
S22
S11
10C
85 C
RMPA39100 S-Parameters Vs. Frequency Vs. Temperature
Bias Vd=5 V, Id=1000 mA
Base Plate Temp 10, 25, 50, 75, and 85 C
RMPA39100 Power, Gain, PAE Vs. Frequency Vs. Temperature
Frequency =39 GHz, Bias Vd=5 V, Id=1000 mA
Base Plate Temp 10, 25, 50, 75, and 85 C
0
5
10
15
20
25
30
35
4
6
8
10
12
14
16
Input Power (dBm)
Ou
tp
u
t
P
o
wer
(d
Bm
),
Gai
n
(d
B),
P
A
E
(%
)
POUT
PAE
Gain
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
10 C
85 C
10 C
85 C
85 C
10 C
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