Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 1
Specifications are based on most current or latest revision.
Description
!
4.9 to 5.85 GHz Operation
!
27 dB small signal gain
!
26 dBm output power @ 1 dB compression
!
2% EVM increase above system level at 18.0 dBm
!
3.3 V single positive supply operation
!
Adjustable bias current operation
!
Two power saving shutdown options (bias and logic control)
!
Integrated power detector with >18 dB dynamic range
!
Low profile 16 pin 3 x 3 x 0.9 mm standard QFN leadless package
!
Internally matched to 50 Ohms
!
Minimal external components
!
Optimized for use in IEEE 802.11a, HyperLAN2 WLAN applications
Features
The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9
to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with
internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for
simplified integration. The on-chip detector provides power sensing capability while the logic control
provides power saving shutdown options. The PA's low power consumption and excellent linearity are
achieved using Raytheon RF Components' InGaP Heterojunction Bipolar Transistor (HBT)
technology.
Electrical
Characteristics
1
Parameter
Minimum
Typical
Maximum
Frequency
2
4.90
5.35
Supply Voltage
3.0
3.3
3.6
Gain
3
27
P1dB Compression
3
26
Quiescent Current
4
140-200
Standby Current
5
1.9
Shutdown Current
6
<1
Mod. Current @18dBm Po
245
EVM
7
2
Input Return Loss
12
Output Return Loss
10
Detector Output
3
0 1.3
Spurious Output
<-60
Harmonic Output
8
-30
Shutdown Control (P1):
Device On, Logic High
2.4
Device Off, Logic Low
0.5
Logic Current
150
Turn-on Time
<1
Turn-off Time
<1
Notes:
1. VC1, VC2, VC3, VM1, VM2, VM3 = 3.3 Volts, Tc=25
C
2. See Page 2,3 for configuration details.
3. Measured Single Tone.
4. See data on pages 9 and 14.
5. Standby current when shutdown from logic input.
6. Shutdown current when supply voltage is disabled.
7. Percentage increase above system level. Power Out = 18.0 dBm (802.11a OFDM 54 Mbps) @ 5.25 GHz
8. At Pout=20 dBm
Minimum
Typical
Maximum
Unit
5.15
5.85
GHz
3.0
3.3
3.6
V
27
dB
26
dBm
140-200
mA
1.9
mA
<1
A
245
mA
2
%
16
dB
10
dB
0 1.3
V
<-60
dBc
-30
dBc
2.4
V
0.5
V
150
A
<1
S
<1
S
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 2
Specifications are based on most current or latest revision.
Functional
Block Diagram
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Description
N/C
VM1
VC1
RF IN
N/C
N/C
VM3
N/C
N/C
RF OUT
DT1 (Vdet)
DT2
VC3
VC2
VM2
P1 (Logic)
Output
Match
Input
Match
Voltage
Detector
Bias
Control
Absolute
Ratings
1
Parameter
Symbol
Value
Units
Positive Supply Voltage
VC1,VC2
4.0
V
Supply Current
IC1
50
mA
IC2
150
mA
IC3
500
mA
Voltage Mirror
VM
3.6
V
Logic Voltage
P1
5
V
RF Input Power
P
in
10
dBm
Case Operating Temperature
T
Case
-40 to +85
C
Storage Temperature
T
stg
-55 to +150
C
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values
Application
Information
The RMPA5251-251 can be optimized to work over 2 frequency ranges,
4.9 to 5.35 GHz (Low Band) and 5.15 to 5.85 GHz (High Band),
Using the 2 external component configurations described on Pages 3 and 4,
the RMPA5251-251 can be optimized to give the best EVM, power and gain
over a specified bandwidth.
The following data shows the performance when the evaluation board is
configured for either low or high band performance
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 3
Specifications are based on most current or latest revision.
Evaluation
Board Schematic
Raytheon
Raytheon
Raytheon
Raytheon
RMPA5251-251 4.90 to 5.35 GHz Operation
Eval Board BOM
No. Ref
Value Unit Qty Size
Description
MFG
Part No.
Comments
1
C1,C2
10
uF
2
805 10 uF Capacitor
Murata
GRM21BR60J106K
Decoupling Capacitor
2
C3
1
pF
1
0603 1 pF Capacitor
Murata
GRM39C0G010B100V
3
C4
100
pF
1
0402 100 pF Capacitor
Murata
GRM36C0G101J050AQ
Detector Capacitor
4
R1,R2
10K
Ohm
2
0402 10 K Ohm Resistor
IMS
RCI-0402-1002J
Detector Resistor
5
L1,L2,L3
10
nH
3
0402 10 nH Inductor
Toko
LLV1005FB10NJ
RF Choke
6
B1
1
Fixture Board
Crown Circuits
G657432
7
J1,J2
2
Jack End Launch SMA
Johnson Components 142-0701-841
8
J3
11
Right Angle Single Header Digikey
S1322-12-ND
9
A1
1
Packaged MMIC
Raytheon
RMPA5251-251
Backside Ground
Note:
*C3 only used in Low Band Configuration
All Mirrors and VC connections can be separate
or connected to a common rail.
Evaluation Board
Bill of Materials
Raytheon
Raytheon
Raytheon
Raytheon
RMPA5251-251 5.15 to 5.85 GHz Operation
Eval Board BOM
No. Ref
Value Unit Qty Size
Description
MFG
Part No.
Comments
1
C1,C2
10
uF
2
805 10 uF Capacitor
Murata
GRM21BR60J106K
Decoupling Capacitor
2
C4
100
pF
1
0402 100 pF Capacitor
Murata
GRM36C0G101J050AQ
Detector Capacitor
3
R1,R2
10K
Ohm
2
0402 10 K Ohm Resistor
IMS
RCI-0402-1002J
Detector Resistor
4
L1,L3
10
nH
2
0402 10 nH Inductor
Toko
LLV1005FB10NJ
RF Choke
5
L2
15
nH
1
0402 15 nH Inductor
Toko
LLV1005FB15NJ
RF Choke
6
B1
1
Fixture Board
Crown Circuits
G657432
7
J1,J2
2
Jack End Launch SMA
Johnson Components 142-0701-841
8
J3
11
Right Angle Single Header Digikey
S1322-12-ND
9
A1
1
Packaged MMIC
Raytheon
RMPA5251-251
Low Band
High Band
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 4
Specifications are based on most current or latest revision.
Evaluation
Board Layout
Evaluation Board
Operation
Actual Board Size
= 2.0" X 1.5"
J1
J2
J3
A1
= component
=
Jumper/short
connection
L3
L2
C3
C1
C2
R1
C4
L1
R2
Recommended turn-on sequence:
1) Connect RF ports J1, J2 to RF test equipment.
2) Connect common ground terminal to the Ground (GND) pin on the board.
3) Connect logic control pin VL to positive supply.
4) Connect terminals VC1, VC2 and VC3 together and connect to positive supply (VC).
5) Connect terminals VM1, VM2 and VM3 together and connect to positive supply (VM).
6) Connect voltmeter to Detector Output, pin DT1.
7) Apply high voltage of +2.4 V to logic control pin VL. (On)
8) Apply positive voltage of 3.3 V to VC1, VC2 and VC3 (first, second and third stage collector).
9) Apply positive voltage of 3.3 V to VM1, VM2 and VM3 (bias networks)
2
.
10) At this point, you should expect to observe the following positive currents flowing into the pins:
Pin
Current
VL
~150
A
VC (Total)
~184 mA
VM (Total)
~16 mA
11) Apply input RF power to SMA connector pin RF IN. Currents on collector pins will vary depending on the input
drive level.
12) Vary positive voltage VL from +2.4 V to +0.5 V to shut down the amplifier or alter the power level.
Shut down current flow into the pins:
Pin
Current
VL
<1 nA
VC (total)
<1 nA
VM (total)
<1.9 mA
Recommended turn-off sequence:
Use reverse order described in the turn-on sequence above.
Note:
1.
Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design.
2.
VM may be adjusted from +2.9 to +3.3V to adjust bias current operation. See page 14.
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 5
Specifications are based on most current or latest revision.
Precautions to Avoid Permanent Device Damage:
-
Static Sensitivity: Follow ESD precautions to protect against ESD damage:
"
A properly grounded static-dissipative surface on which to place devices.
"
Static-dissipative floor or mat.
"
A properly grounded conductive wrist strap for each person to wear while
handling devices.
Application
Information
RMPA5251-251 Comparison Low Band Vs. High Band
EVM % Increase of System Floor Vs. Frequency
Modulated Power Out =18 dBm 54 Mbps OFDM VC=VM=3.3V, ICQ=184mA, IMQ=16mA
0
1
2
3
4
5
6
7
8
9
10
11
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
Frequency (GHz)
E
V
M
%
I
n
c
r
e
ase
o
ver
S
yst
em
F
l
o
o
r
(
%
)
Low Band
Configuration
High Band Cnfiguration
10 nH on VC2 Replaced with 15 nH
and 1 pF on VC2 removed
Performance
Data
Dimensions in inches [mm]
Package Outline
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 6
Specifications are based on most current or latest revision.
RMPA5251-251 S-Parameters Vs. Frequency
VM=VC=3.3 V, IMQ=16 mA, ICQ=184 mA, Low Band Configuration
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
Frequency (GHz)
S1
1
a
n
d
S2
2
M
a
g
(
d
B
)
0
3
6
9
12
15
18
21
24
27
30
S2
1
M
a
g
(
d
B
)
S11
S22
S21
RMPA5251-251 S-Parameters Vs. Frequency
VM VC=3.3 V, IMQ=16 mA, ICQ=184 mA, High Band Configuration
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6
Frequency (GHz)
S1
1
a
n
d
S2
2
M
a
g
(
d
B
)
0
3
6
9
12
15
18
21
24
27
30
S2
1
M
a
g
(
d
B
)
S11
S22
S21
S22
S11
S21
Performance
Data
Low Band
Configuration
High Band
Configuration
S22
S21
S11
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 7
Specifications are based on most current or latest revision.
RMPA5251-251 Typical Gain Vs Single Tone Output Power
VC=VM=3.3 V, ICQ=184 mA, IMQ=16 mA, 4.9 - 5.35 GHz Low Band Configuration
20
21
22
23
24
25
26
27
28
29
30
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Output Power (dBm)
Ga
i
n
(
d
B
)
4.90 GHz
4.95 GHz
5.00 GHz
5.05 GHz
5.10 GHz
5.15 GHz
5.25 GHz
5.35 GHz
Performance
Data
RMPA5251-251 Typical Gain Vs Single Tone Output Power
VC=VM=3.3 V, ICQ=184 mA, IMQ=16 mA, 5.2 - 5.8 GHz High Band Configuration
20
21
22
23
24
25
26
27
28
29
30
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Output Power (dBm)
Ga
i
n
(
d
B
)
5.2 GHz
5.3 GHz
5.4 GHz
5.5 GHz
5.6 GHz
5.7 GHz
5.8 GHz
Low Band
Configuration
High Band
Configuration
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 8
Specifications are based on most current or latest revision.
RMPA5251-251 Detector Voltage 4.9 - 5.35 GHz OFDM 54 Mbps Modulation
VC=VM=3.3 V, ICQ=184 mA, IMQ=16 mA, T=25C, Low Band Configuration
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22
Total Channel Power 16.7 MHz (dBm)
D
e
t
e
c
t
or
V
o
l
t
age
(
m
V
)
4.90 GHz
4.95 GHz
5.00 GHz
5.05 GHz
5.10 GHz
5.15 GHz
5.20 GHz
5.25 GHz
5.30 GHz
5.35 GHz
RMPA5251-251 Detector Voltage 5.15 - 5.85 GHz OFDM 54 Mbps Modulation
VC=VM=3.3 V, ICQ=184 m A, IMQ=16 m A, T=25C, High Band Configuration
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Total Channel Pow er 16.7 MHz (dBm)
De
t
e
c
t
o
r
V
o
l
t
a
g
e
(
m
V
)
5.15 GHz
5.25 GHz
5.35 GHz
5.45 GHz
5.55 GHz
5.65 GHz
5.75 GHz
5.85 GHz
Performance
Data
Low Band
Configuration
High Band
Configuration
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 9
Specifications are based on most current or latest revision.
RMPA5251 Typical Total Current Vs. Single Tone Output Power
VC=VM=3.3V, ICQ=184 mA, IMQ=16 mA, 4.9 - 5.35 GHz
100
150
200
250
300
350
400
450
500
550
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Output Power (dBm)
T
o
t
a
l
C
u
r
r
ent
(
m
A
)
4.90 GHz
4.95 GHz
5.00 GHz
5.05 GHz
5.10 GHz
5.15 GHz
5.25 GHz
5.35 GHz
RMPA5251-251 Typical Total Current Vs. Single Tone Output Pow er
VC=VM=3.3V, ICQ=184 m A, IMQ=16 m A, 5.2 - 5.8 GHz
100
150
200
250
300
350
400
450
500
550
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Output Pow er (dBm)
T
o
t
a
l
C
ur
r
ent
(
m
A
)
5.2 GHz
5.3 GHz
5.4 GHz
5.5 GHz
5.6 GHz
5.7 GHz
5.8 GHz
Performance
Data
Low Band
Configuration
High Band
Configuration
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 10
Specifications are based on most current or latest revision.
RMPA5251-251 EVM Increase QAM64 54 Mbps OFDM Modulation
VC=VM=3.3V, ICQ=184m A, IMQ=16m A, F=5.15- 5.85GHz, T=25
o
C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
4
5
6
7
8
9
10 11
12
13
14
15 16
17
18
19 20
21
22
Total Channel Pow er 16.7 MHz (dBm)
E
V
M
I
nc
r
eas
e
A
bov
e
S
y
s
t
e
m
(
%
)
5.15 GHz
5.25 GHz
5.35 GHz
5.45 GHz
5.55 GHz
5.65 GHz
5.75 GHz
5.85 GHz
RMPA5251-251 EVM Increase QAM64 54 Mbps OFDM Modulation
VC=VM=3.3V, ICQ=184m A, IMQ=16mA, F=5.15- 5.35GHz, T=25
o
C
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Total Channel Power 16.7 MHz (dBm)
EVM
I
n
cr
e
a
se
Ab
o
v
e
S
yst
e
m
(%
)
4.90 GHz
4.95 GHz
5.00 GHz
5.05 GHz
5.10 GHz
5.15 GHz
5.20 GHz
5.25 GHz
5.30 GHz
5.35 GHz
Performance
Data
Low Band
Configuration
High Band
Configuration
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 11
Specifications are based on most current or latest revision.
RMPA5251-251 Output Power for 3 % Increase in EVM 802.11a 54 Mbps
Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (Low Band Config)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency (GHz)
T
o
t
a
l
C
ha
nnel
P
o
w
e
r
(
dB
m
)
18 dBm
RMPA5251-251 Output Power for 3 % Increase in EVM 802.11a 54 Mbps
Modulation VM=VC=3.3 V, ICQ=184 mA, IMQ=16 mA (Low Band Config)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
4.9
4.95
5
5.05
5.1
5.15
5.2
5.25
5.3
5.35
Frequency (GHz)
T
o
t
a
l
C
hann
el
P
o
w
e
r
(
dB
m
)
18 dBm
Performance
Data
Low Band
Configuration
High Band
Configuration
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 12
Specifications are based on most current or latest revision.
RMPA5251-251 Spectral Plot Showing Compliance to 802.11a Spectral Mask Requirements
@ 21.0 dBm Modulated Output Power 54Mbps OFDM Data, 16.7 MHz BW, 176
S Burst,
100
S Idle, Frequency= 5.25 GHz, VC=VM=3.3V, ICQ=184mA, IMQ=16mA, T=25
o
C
Performance
Data
Low Band
Configuration
High Band
Configuration
RMPA5251-251 Spectral Plot Showing Compliance to 802.11a Spectral Mask Requirements
@ 21.0 dBm Modulated Output Power 54Mbps OFDM Data, 16.7 MHz BW, 176
S Burst,
100
S Idle, Frequency= 5.5 GHz, VC=VM=3.3V, ICQ=184mA, IMQ=16mA, T=25
o
C
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 13
Specifications are based on most current or latest revision.
RMPA5251-251 Single Tone Gain Vs. VC Vs. Frequency
VM=3.3V T=25C
0
5
10
15
20
25
30
35
4.85
4.95
5.05
5.15
5.25
5.35
5.45
5.55
5.65
5.75
5.85
5.95
6.05
Frequency (GHz)
Ga
i
n
(d
B
)
3.0V
3.3V
3.6V
VC
RMPA5251-251 Single Tone P1dB Vs. VC Vs. Frequency
VM=3.3V T=25C
15
16
17
18
19
20
21
22
23
24
25
26
27
28
4.85
4.95
5.05
5.15
5.25
5.35
5.45
5.55
5.65
5.75
5.85
5.95
6.05
Frequency (GHz)
P1
d
B
(
d
B
m
)
3.0V
3.3V
3.6V
VC
Performance
Data
High Band
Configuration
High Band
Configuration
RMPA5251-251 Performance Vs. Change in Collector Voltage (VC)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheonrf.com
Raytheon
RF Components
RMPA5251-251
4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier
ADVANCED INFORMATION
Revised June 30, 2003
Page 14
Specifications are based on most current or latest revision.
RMPA5251-251 Total Current VS. VM Vs. Modulated Output
Power VC=3.3V Frequency = 5.25 GHz T=25C
100
120
140
160
180
200
220
240
260
280
3
5
7
9
11
13
15
17
19
21
23
Modulated Output Power (dBm)
T
o
t
a
l
C
ur
r
ent
(
m
A
)
2.9V
3.0V
3.1V
3.2V
3.3V
2.9V
3.0V
3.1V
3.3V
3.2V
VM
VM:
Performance
Data
Low Band
Configuration
Gain and Total Quiescent Current Vs. Mirror Voltage (VM)
Frequency = 5.25 GHz, VC=3.3V, T=25C
19
20
21
22
23
24
25
26
27
28
29
30
2.9
3
3.1
3.2
3.3
Mirror Voltage, VM (V)
Gai
n
(
d
B
)
130
140
150
160
170
180
190
200
210
220
230
240
T
o
t
a
l
C
ur
r
ent
(
m
A
)
Total Current
Gain
RMPA5251-251 Output Power for 2% EVM Increase for VM
= 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation
15.5
16
16.5
17
17.5
18
18.5
19
19.5
20
5.15
5.2
5.25
5.3
5.35
Frequency (GHz)
Modu
l
a
t
e
d
O
ut
pu
t
P
ow
er
(d
B
m
)
VM = 2.9 V Itotal = 142 mA
VM = 3.0 V Itotal = 155 mA
VM = 3.1 V Itotal = 170 mA
VM = 3.2 V Itotal = 185 mA
VM = 3.3 V Itotal = 200 mA
2.9V
3.0V
3.1V
3.2V
3.3V
RMPA5251-251 Output Power for 3% EVM Increase for VM
= 2.9 to VM = 3.3V 802.11a 54 Mbps OFDM Modulation
15.5
16
16.5
17
17.5
18
18.5
19
19.5
20
5.15
5.2
5.25
5.3
5.35
Frequency (GHz)
M
o
d
u
l
a
t
e
d
O
u
t
put
P
o
w
e
r
(
dB
m
)
VM = 2.9 V Itotal = 142 m A
VM = 3.0 V Itotal = 155 m A
VM = 3.1 V Itotal = 170 m A
VM = 3.2 V Itotal = 185 m A
VM = 3.3 V Itotal = 200 m A
3.0V
3.1V
2.9V
3.2V
3.3V
RMPA5251-251 Modulated Output Power (OFDM 54 Mbps)
at 2% and 3% EVM Vs. Mirror Voltage Vs. Frequency,
VC=3.3V, T=25
o
C
Total current can
be varied by
resetting the
quiescent current
by means of
adjusting the
mirror voltage, VM.
RMPA5251-251 Performance Vs. Change in Mirror Voltage (VM)
Low Band
Configuration
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