Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
The RMTR13390 is a 13 to 39 GHz Tripler designed to be used in the LO chain of point to point radios, point to
multi-point communications, LMDS, and other millimeter wave applications. The RMTR13390 is a three stage
amplifier in which the first stage acts as a harmonic generator followed by two stages of amplification at 3Fo. The
RMTR13390 utilizes Raytheon's advanced 0.15 m gate length PHEMT process and is sufficiently versatile to
serve in a variety of multiplier applications.
Description
2 mil substrate
Conversion Loss 5 dBm (typ.)
Wide operating bandwidth
Chip size 3.224 mm x 1.134 mm
Features
Electrical
Characteristics
(At 25C), 50
system,
Vd = +5 V, Quiescent
current (Idq)= 100 mA,
Pin=+17 dBm
Note: 1. Typical range of the negative gate voltage is -0.5 to 0.0V to set typical Idq of 100 mA.
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Unit
Positive DC Voltage (+5 V Typical)
Vd
+ 6
Volts
Negative DC Voltage
Vg
- 2
Volts
Simultaneous (Vd - Vg)
Vdg
+ 8
Volts
Positive DC Current
Id
187
mA
RF Input Power (from 50
source)
P
IN
+22
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance
R
j
117
C/W
(Channel to Backside)
Parameter
Min
Typ
Max
Unit
Input Frequency Range
12
13.5
GHz
Output Frequency Range
36
40.5
GHz
Gate Supply Voltage (Vg)
1
- 0.2
V
Input Drive Power @ Fo
+15
+17
dBm
Output Power @ 3Fo
+12
dBm
Parameter
Min
Typ
Max
Unit
Conversion Loss
5
dBm
Fundamental Rejection
-15
dBc
2nd Harmonic Rejection
-25
dBc
4th Harmonic Rejection
-25
dBc
Input Return Loss
8
dB
Output Return Loss
7
dB
RMTR13390
13-39 GHz Tripler MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mil between the chip and the substrate material.
Figure 1
Functional Block
Diagram
Application
Information
MMIC Chip
RF OUT
3Fo
RF IN
Fo
Ground
(Back of Chip)
Gate Supply
(Vg1, Vg2 & Vg3)
Drain Supply
(Vd2)
Drain Supply
(Vd3)
Drain Supply
(Vd1)
X3
0.0
0.974
1.883
0.182
2.369
1.019
2.529
2.025
1.723
0.113
1.007
0.127
3.042
3.111
1.134
0.777
0.577
0.377
0.115
3.224
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 3.224 mm x
1.134 mm. Back of chip
is RF ground.
Dimensions in mm
RMTR13390
13-39 GHz Tripler MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
RF OUT
3Fo
RF IN
Fo
Ground
(Back of Chip)
Gate Supply (Vg)
Drain Supply (Vd = +5 V)
100 pF
10,000 pF
100 pF
10,000 pF
100 pF
100 pF
L= Bond Wire Inductance
L
L
L
L
L
L
L
L
L
Figure 3
Recommended
Application Schematic
Circuit Diagram
RMTR13390
13-39 GHz Tripler MMIC
X3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Figure 4
Recommended
Assembly Diagram
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
100pF
`
100pF
Drain Supply (Vd = +5 V)
10,000pF
Gate Supply (Vg)
RMTR13390
13-39 GHz Tripler MMIC
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=100 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage (Vg).
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Performance
Data
RMTR13390 Fixtured Data
Vd = 5V Vg = -0.25V Id = 98 mA w/o RF
All Gates and Drains Separated on chip
Pin = 17 dBm
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
11
11.5
12
12.5
13
13.5
14
14.5
Input Freq. (GHz)
Harm
oni
c P
o
w
e
r
(dB
m
)
Pfo
P2fo
P3fo
P4fo
RMTR13390 Fixtured Data
Vd = 5V Vg = -0.25V Id = 98 mA w/o RF
All Gates and Drains Separated on chip
Pin = 15, 17 & 19 dBm
0
5
10
15
20
11
11.5
12
12.5
13
13.5
14
14.5
Input Freq. (GHz)
Harm
oni
c
P
ow
er
(
dB
m
)
P3fo_15 dBm
P3fo_17 dBm
P3fo_19 dBm
RMTR13390
13-39 GHz Tripler MMIC
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