Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Small-signal gain 25 dB (typ.)
3 dB compressed Pout 21 dBm (typ.)
Voltage detector included to monitor Pout
Chip size 2.2 mm x 1.7 mm
Features
The RMWB12001 is a 3-stage GaAs MMIC amplifier designed as an 8.5 to 12 GHz Buffer Amplifier for use in the LO
chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications.
In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz
transmit/receive chipset. The RMWB12001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently
versatile to serve in a variety of medium power amplifier applications.
Parameter
Min
Typ
Max
Unit
Frequency Range
8.5
12
GHz
Gate Supply Voltage
1
(Vg)
-0.2
V
Gain Small Signal
(Pin=-15 dBm)
23
25
dB
Gain Variation Vs
Frequency
3.0
dB
Power Output Saturated
(Pin=-1 dBm)
18
21
23
dBm
Drain Current Saturated
(Pin=-1 dBm)
120
220
mA
Parameter
Min
Typ
Max
Unit
Power Added Efficiency
(PAE) at Psat
26
%
Input Return Loss
(Pin=-15 dBm)
12
dB
Output Return Loss
(Pin=-15 dBm)
10
dB
DC detector voltage at
Pout=20 dBm
0.5
V
Absolute
Maximum
Ratings
Parameter
SymbolVal
ue
Units
Positive DC Voltage (+4 V Typical)
Vd
+6
Volts
Negative DC Voltage
Vg
-2
Volts
Simultaneous (Vd - Vg)
Vdg
8
Volts
Positive DC Current
I
D
207
mA
RF Input Power (from 50
source)
P
IN
+8
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance
R
jc
120
C/W
(Channel to Backside)
Note:
1. Typical range of gate voltage is -0.7 to -0.1V to set Idq of 96 mA.
Electrical
Characteristics
(At 25C),
50
system, Vd=+4 V,
Quiescent Current
Idq=96 mA
RMWB12001
12 GHZ Buffer Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 1
Functional
Block Diagram
Note:
Detector delivers > 0.1V DC into 3 k
load resistor for > +20 dBm output power. If output power level detection is not desired, do not connect to
detector bond pad.
RF IN
Drain Supply
Vd1
Drain Supply
Vd2 and Vd3
Output Power
Detector Voltage Vdet
RF OUT
Gate Supply Vg
Ground (Back of Chip)
MMIC Chip
Application
Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typically 2 mil between the chip and the substrate material.
Figure 2
Chip Layout and
Bond Pad locations.
Chip size is 2.24
mm x 1.70 mm x
100
m. Back of
chip is RF and DC
ground.
Dimensions in mm
0.00
0.00
1.11
2.12 2.24
1.42
1.60
1.70
0.11
0.48
0.73
2.03
2.24
0.00
0.69
1.60
1.70
0.10
0.10
RMWB12001
12 GHZ Buffer Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
MMIC Chip
RF IN
Gate Supply V
g
Ground
(Back of Chip)
Bond Wires
10,000 pF
Bond Wires
Drain Supply
V
d
=4 V
RF OUT
100 pF
Bond Wires
3 k
Output Power
Detector Voltage V
det
100 pF
100 pF
100 pF
10,000 pF
Note:
Detector delivers > 0.1 V DC into 3 k
load resistor for > +20 dBm output power. If output power level detection is not desired, do not connect to
detector bond pad.
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Figure 4
Application Information
Recommended
Assembly Diagram
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
Die-Attach
80Au/20Sn
Drain Supply
Vd= 4 V
Output Power
Detector Voltage
V
det
100pF
100pF
3k
10,000pF
Gate Supply Vg
100pF
10,000pF
L< 0.015"
(4 Places)
100pF
RMWB12001
12 GHZ Buffer Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier.
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=96 mA.
Recommended
Procedure
for Biasing and
Operation
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
RMWB12001 12 GHz BA, Typical Small Signal Performance
On-Wafer Measurements, Vd=4 V, Idq= 96 mA
20
22
24
26
28
30
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
Frequency (GHz)
S2
1
(dB)
-25
-20
-15
-10
-5
0
S1
1,
S
22
(
GHz
)
S21
S22
S11
Performance
Data
RMWB12001
12 GHZ Buffer Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
RMWB12001 12 GHz BA, Typical Small Signal Performance
On-Wafer Measurements, Vd=4 V, Idq= 96 mA
RMWB12001 12 GHz BA, Power Output and Gain at 3 dB Compression Vs. Frequency and
Temperature On-Wafer Measurements, Vd=4 V, Idq= 96 mA, T=25 C
18
20
22
24
26
28
30
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
Frequency (GHz)
S2
1
(dB)
-30
-25
-20
-15
-10
-5
0
S1
1,
S
22
(
GHz
)
S21
S11
S22
19
20
21
22
23
24
25
8.5
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
P3dB
(
d
B
m
)
,
G3dB
(
d
B
)
P3dB
G3dB
RMWB12001
12 GHZ Buffer Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 6
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
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