Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
Parameter
Symbol
Value
Unit
RF Input Power (from 50
source)
P
IN
+25
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point
communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon RF
Components amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The
RMWM38001 is a GaAs MMIC diode mixer utilizing Raytheon RF Components' 0.25m power PHEMT process. The
MMIC can be used as both an Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of
mixer applications.
Absolute
Ratings
Description
4 mil substrate
Conversion loss 5 dB (Upconverter)
Conversion loss 8 dB (Downconverter)
No DC bias required
Chip size 1.4 mm x 1.4 mm
Features
Notes:
1. Device 100% RF tested as downconverter only. LO drive = +12 dBm, RF Pin = -10 dBm, IF = 5 GHz.
Electrical
Characteristics
(At 25C),
50
system,
LO = +12 dBm
RMWM38001
38 GHz Mixer MMIC
Parameter Min
Typ
Max
Unit
RF Frequency Range
37
40
GHz
LO Frequency Range
32 - 35
GHz
IF Frequency Range
4.7 - 5.3
GHz
LO Drive Power
12
16
dBm
Up Conversion Loss
5
dB
Down Conversion Loss
1
8
10
dB
Conversion Loss Variation
vs Freq
3
dB
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding
to a typical 2 mil gap between the chip and the substrate material.
Application
Information
Figure 1
Functional Block
Diagram
MMIC Chip
IF IN
RF OUT
Ground
(Back of Chip)
LO IN
Up-Conversion
MMIC Chip
IF OUT
RF IN
Ground
(Back of Chip)
LO IN
Down-Conversion
Dimensions in mm
0.0
0.0
0.0
0.0
1.4
1.4
1.4
1.4
0.7205
0.863
0.163
0.3055
0.164
0.3065
Figure 2
Chip Layout and
Bond Pad Locations
Chip Size is 1.4 mm
x 1.4 mm x 100
m.
Back of chip is RF
ground
RMWM38001
38 GHz Mixer MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
LO
Input
RF Input
/Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(6 Places)
Die-Attach
80Au/20Sn
IF Input
/Output
5 mil Thick
Alumina
50-Ohm
Figure 3
Recommended
Assembly Diagram
1
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The RMWM38001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input
drive level.
Recommended
Procedure for
Operation
Note:
1. Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
RMWM38001
38 GHz Mixer MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
www.raytheonrf.com
Performance
Data
RMWM38001 38 GHz Mixer on-Wafer Performance UpConverter.
LO Drive Power = 12 dBm
RMWP38001 38 GHz Mixer Typical On-Wafer Performance DownConverter.
LO Drive Power = 12 dBm
-10
-8
-6
-4
-2
0
37000
37500
38000
38500
39000
39500
40000
RF Output Frequency (GHz)
C
o
nver
s
io
n G
a
in (dB)
-10
-8
-6
-4
-2
0
37000
37500
38000
38500
39000
39500
40000
RF Input Frequency (GHz)
C
o
nver
s
io
n G
a
in (dB)
RMWM38001
38 GHz Mixer MMIC
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