Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Description
4 mil substrate
Small-signal gain 22.5 dB (typ.)
1dB compressed Pout 23.5 dBm (typ.)
Chip size 2.6 mm x 1.2 mm
Features
The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to
point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction
with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset.
The RMWP23001 utilizes Raytheon's 0.25m power PHEMT process and is sufficiently versatile to serve in a
variety of power amplifier applications.
RMWP23001
21-24 GHz Power Amplifier MMIC
Electrical
Characteristics
(At 25C),
50
system,
Vd = +4 V,
Quiescent Current
Idq = 400 mA
Parameter
Min
Typ
Max Unit
Frequency Range
21
24
GHz
Gate Supply Voltage (Vg)
1
-0.3
V
Gain Small Signal at
Pi n= -8 dBm
20
22.5
dB
Gain Variation vs. Frequency
1.0
dB
Gain at 1dB Compression
21.5
dB
Power Output at 1dB
Compression
24
dBm
Power Output Saturated:
Pin = +3 dBm
22
25
dBm
Drain Current at Pin = -8 dBm
400
mA
Parameter
Min
Typ
Max Unit
Drain Current at 1 dB
Compression
430
mA
Drain Current at Saturated:
Pin = +3 dBm
410
mA
Power Added Efficiency
(PAE): at P1 dB
15
%
Input Return Loss
(Pin = -8 dBm)
14
dB
Output Return Loss
(Pin = -8 dBm)
12
dB
OIP3
33
dBm
Noise Figure
8
dB
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Units
Positive DC voltage (+4 V Typical)
Vd
+6
Volts
Negative DC voltage
Vg
-2
Volts
Simultaneous (Vd - Vg)
Vdg
8
Volts
Positive DC Current
I
D
607
mA
RF Input Power (from 50
source)
P
IN
+8
dBm
Operating Baseplate Temperature
T
C
-30 to +85
C
Storage Temperature Range
T
stg
-55 to +125
C
Thermal Resistance
(Channel to Backside)
R
jc
36.5
C/W
Note:
1.
Typical range of gate voltage is -0.7 to -0.05 V to set Idq of 400 mA.
Functional
Block Diagram
RF IN
RF OUT
Drain
Supply
Vd1
Drain
Supply
Vd2
Drain
Supply
Vd3
Drain
Supply
Vd4
Gate Supply
Vg
Ground
(Back of Chip)
MMIC Chip
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high
thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined,
finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent
contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate
precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be
well grounded to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long
corresponding to a typically 2 mil between the chip and the substrate material.
CAUTION: LOSS OF GATE VOLTAGES (Vg) WHILE DRAIN VOLTAGES (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier.
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 400 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Application
Information
Recommended
Procedure
for Biasing and
Operation
Chip Layout and
Bond Pad
Locations
Chip Layout and Bond
Pad Locations
Chip Size is 2.6 mm x
1.2 mm x 100
m.
Back of chip is RF and
DC ground
Dimensions in mm
0.0
0.0
0.0
0.0
2.6
2.6
1.2
1.2
0.55
0.82
1.072
1.756
2.076
0.791
0.637
0.482
0.685
0.53
0.376
RMWP23001
21-24 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Recommended
Application
Schematic Circuit
Diagram
L
Drain Supply
Vd = +4 V
Ground
(Back of Chip)
MMIC Chip
RF OUT
RF IN
100pF
100pF
L
L
L
100pF
100pF
10,000pF
L
L
L
L
L
L = Bond Wire
Inductance
100pF
1
F
Gate Supply
Vg
L
Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Recommended
Assembly
Diagram
100pF
100pF
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015"
(4 Places)
Die-Attach
80Au/20Sn
100pF
Vg
(Negative)
100pF
10,000pF
Vd
(Positive)
1
F
100pF
RMWP23001
21-24 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
RMWP23001, 23GHz Power Amplifier, Typical Performance,
Vd=4V, Idq=370mA, Chip Bonded into 50ohm Test Fixture
-40
-30
-20
-10
0
10
20
30
40
0
10
20
30
40
Frequency (GHz)
S
21 (dB
)
-20
-15
-10
-5
0
5
10
15
20
S
11, S
22 (dB
)
S21
S11
S22
S21
S22
S11
RMWP23001, 23GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq=400mA
20
21
22
23
24
25
-15
-10
-5
0
5
Input Power (dBm)
Gain
(d
B)
5
10
15
20
25
30
Ou
tp
u
t
P
o
wer
(d
Bm
)
Gain @ 21GHz
Gain @ 22GHz
Gain @ 23GHz
Gain @ 24GHz
Pout @ 21GHz
Pout @ 22GHz
Pout @ 23GHz
Pout @ 24GHz
Performance
Data
RMWP23001
21-24 GHz Power Amplifier MMIC
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
RMWP23001, 23GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq=400mA and 435mA
18
19
20
21
22
23
24
25
26
18
19
20
21
22
23
24
25
Frequency (GHz)
Gain
(d
B)
18
19
20
21
22
23
24
25
26
P
o
u
t
at 1d
B Co
m
p
r
essio
n
(d
Bm
)
Gain - 400mA
Gain - 435mA
P1dB - 400mA
P1dB - 435mA
RMWP23001, Typical Performance variation with Temperature
Vd=4V, Idq=400mA, Chip Bonded into 50ohm Test Fixture
20
21
22
23
24
25
26
20
21
22
23
24
Frequency (GHz)
SS G
a
i
n
(
d
B)
+30C
-25C
+80C
+30C (room)
-25C
+80C
RMWP23001
21-24 GHz Power Amplifier MMIC
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