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Электронный компонент: SLCD-61N2

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5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLCD-61N2
Solderable Planar Photodiode

Features
Fast response
High reliability, long life
Ideal for moderate reverse bias voltage operation
Linear short circuit current
Low capacitance
Description
The Silonex 5.1 x 5.1 solderable planar photodiodes
chips feature low cost, high reliability, and linear short
circuit current over a wide range of illumination.
These devices are widely used for light sensing and
power generation because of their stability and high
efficiency. They are particularly suited to power
conversion applications due to their low internal
impedance, relatively high shunt impedance, and
stability. These devices also provide a reliable and
inexpensive detector for instrumentation and light
beam sensing applications.
Absolute Maximum Ratings
Storage Temperature
-40
C to +125
C
Operating Temperature
-40
C to +105
C
Cathode
Sensitive Area
(21.4 sq.mm.)
Dimensions in mm. (+/- 0.13)
0.4
5.1
5.1
Solderable
Contact
1.0
0.8
0.6
0.4
100
90
80
70
60
50
40
30
20
10
Half Angle = 60
Directional Sensitivity Characteristics
20
40
60
80
100 120
0.0
0.2
0.4
0.6
0.8
1.0

Electrical Characteristics
(T
A
=25
C unless otherwise noted)
Symbol Parameter
Min
Typ
Max
Units
Test Conditions
I
SC
Short Circuit Current
1.0
1.25
mA
V
R
=0V, Ee=25mW/cm
2
(1)
V
OC
Open Circuit Voltage
0.40
V
Ee=25mW/cm
2
(1)
I
D
Reverse Dark Current
1.0
10
A
V
R
=5V, Ee=0
C
J
Junction Capacitance
0.8
nF
V
R
=0V, Ee=0, f=1MHz
S
Spectral Sensitivity
0.55
A/W
=940nm
V
BR
Reverse Breakdown Voltage
20
V
I
R
=100
A
P
Maximum Sensitivity Wavelength
930
nm
R
Sensitivity Spectral Range
400
1100
nm
1/2
Acceptance Half Angle
60
deg
(off center-line)
Notes: (1) Ee = source @ 2854
K
103226 REV 0
Specifications subject to change without notice.