RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4448
RECTRON
1N4448 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25
C)
Items
Symbol
Ratings
Unit
Reverse Voltage
VR
75
V
Reverse Recovery
Time
trr
4
ns
Power Dissipation
3.33mW/
C (25
C)
P
500
mW
Forward Current
IF
500
mA
Junction Temp.
Tj
-65 to 175
C
Storage Temp.
Tstg
-65 to 175
C
Mechanical Data
Items
Materials
Package
DO-35
Case
Hermetically sealed glass
Lead/Finish
Double stud/Solder Plating
Chip
Glass Passivated
Dimensions (DO-35
)
DO-35
0.457
0.559
2.0
max.
4.2
max.
26 MIN
26 MIN
Dimensions in millimeters
DIA.
DIA.
Electrical Characteristics (Ta=25
C)
Ratings
Symbol
Ratings
Unit
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
BV
75
100
V
Peak Forward Surge Current PW= 1sec.
IFsurge
1.0
A
Maximum Forward Voltage
IF= 100mA
VF
1.0
V
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150
C
IR
0.025
5.0
50
uA
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Cj
4
pF
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
trr
4
ns
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