ChipFind - документация

Электронный компонент: BAV70

Скачать:  PDF   ZIP
1. ANODE
2. ANODE
3. CATHODE
3
2
-
T
O
S
3
2
-
T
O
S
3
2
-
T
O
S
3
2
-
T
O
S
3
2
-
T
O
S
(1)
(3)
(2)
(UNITS: mm)
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION
BAV70
RECTRON
SURFACE MOUNT, DUAL 1N4148 COMMON CATHODE DIODE
Absolute Maximum Ratings (Ta=25
C)
Items
Symbol
Ratings
Unit
Reverse Voltage
VR
70
V
Reverse
Recovery Time
trr
4
ns
Forward Voltage
@ If = 50 mA
VF
1.0
V
Forward Current
IF
215
mA
Junction Temp.
Tj
-55 to 150
C
Storage Temp.
Tstg
-55 to 150
C
Mechanical Data
Items
Materials
Package
SOT-23
Lead Frame
42 Alloy
Lead Finish
Solder Plating
Bond Wire
Au
Mold Resin
Epoxy
Chip
Silicon
Electrical Characteristics per Diode (Ta=25
C)
Ratings
Symbol
Ratings
Unit
Reverse Voltage IR= 100uA
VR
70
V
Repetitive Peak Reverse Voltage
VRRM
75
V
Repetitive Peak Forward Current
IFRM
450
mA
Forward Voltage
IF= 1mA
IF= 10mA
IF= 50mA
IF= 150mA
VF
715
855
1000
1250
mV
Reverse Current
VR= 75V
VR= 25V (Tj= 150
C)
VR= 75V (Tj= 150
C)
IR
2.5
60
100
uA
Junction Capacitance VR = 0 V, f = 1MHz
Cj
1.5
pF
Reverse Recovery Time IF= IR= 10mA; RL= 100 ohms
trr
4
ns
Thermal Resistance (junction to ambient)
R
JA
500
C/W