BC556
PNP Planar Epitaxial Transistor
www.rectron.com
1.COLLECTOR
2.BASE
3. EMITTER
DIM MIN MAX
A 4.32 5.33
B 4.45 5.2
C 3.18 4.19
D 0.41 0.50
E 0.35 0.50
F
5
q 5
q
G 1.14 1.40
H 1.14 1.53
K 12.70 -
Absolute Maximun Ratings (Ta=25
o
C)
TO-92
TECHNICAL SPECIFICATION
Symbol
-
Ratings
Unit
Collector-Emmiter Voltage
V
CEO
-
65
V
Collector-Emmitor Voltage
V
CES
-
80
V
Collector Base Voltage
V
CBO
-
80
V
Emitter Base Voltage
V
EBO
-
5
V
Collector current Continuous
I
C
-
100
mA
Peak
I
CM
-
200
mA
Base Current - Peak
I
BM
-
200
mA
Emitter Current - Peak
I
E M
-
200
mA
Collector Power Dissapation Ta = 25 C
P
TA
-
500
mW
Operating and Storage Junction
T
j
T
stg
-
(-55 to +150)
C
THERMAL RESISTANCE
Junction to ambient
R
th(j-a)
-
250
C / W
Transition Frequency
f
T
I
C
= 10mA, V
CE
= 5V
f = 100MHz
-
150
-
MHz
Collector Output Capacitance
V
CBO
V
CB
= 10V, f = 1MHz
-
-
6
pF
Nose Figure
NF
V
CE
= 5V, I
C
= 0.2mA
R
S
N I .+]
B = 200 Hz
-
2
10
dB
Characteristics Ratings
(at Ta = 25
C unless otherwise specified)
Dynamics Characteristics
Symbol
Test Conditions
min.
Typ.
max.
Unit
Collector Emitter Voltage
V
CEO
I
C
= 2mA, I
B
=0
65
-
-
V
Collector Base voltage
V
CBO
I
C
= 100uA, I
E
=0
80
-
-
V
Emitter Base Voltage
V
EBO
I
E
= 100uA, I
C
=0
5
-
-
V
Collector Cut off Current
I
CBO
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
J
= 150C
-
0.2
-
15
4
nA
uA
Collector Cut off Current
I
CES
V
CE
= 80V
V
CE
= 80V, T
J
= 125C
-
0.2
-
15
4
nA
uA
DC Current Gain
h
FE
V
CE
= 5V. I
C
= 2mA
75
475
Collector Emitter Saturation Voltage
V
CE (SAT)
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
-
0.09
0.25
0.3
0.65
V
Base Emitter Saturation Voltage
V
BE (SAT)
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5mA
-
0.7
0.9
-
V
Base Emitter on Voltage
V
BE (SAT)
I
C
= 2mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
0.55
-
0.66
-
0.7
0.82
V
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