BC817
TECHNICAL SPECIFICATION
Absolute Maximun Ratings (
Ta=25
o
C unless specified otherwise
)
Dimensions SOT-23
Desription
SYMBOL
VALUE
UNITS
Collector-Emitter Voltage
(V
BE
= 0V)
V
CES
50
V
Collector Emitter Voltage (open base) I
C
= 10mA
V
CEO
45
V
Emitter Base Voltage
V
EBO
5
V
Collector Current (DC)
I
C
500
mA
Collector Current - Peak
I
CM
1000
mA
Emitter Current - Peak
(-I
EM
)
1000
mA
Base Current - (DC)
I
B
100
mA
Base Current - Peak
I
BM
200
mA
Total Power Dissipation up to T
amb
= 25 C
P
tot
250
mW
Storage Temperature
T
stg
(-55 to +150)
C
Junction Temperature
T
J
150
C
From junction to ambient
R
th(j-a)
500
k / W
Thermal Resistance
NPN Silicon Planar Epitaxial Transistor
1
BASE
2
EMITTER
3
COLLECTOR
Symbol
Test Conditions
Unit
Collector Cut off Current
I
CBO
V
CB
= 20V, I
E
= 0, TJ = 25C
V
CB
= 20V, I
E
= 0, T
J
= 150C
<
<
nA
A
Emitter cut-off current
I
EBO
I
C
= 0, V
EB
= 5V
<
A
Base Emitter on Voltage
V
BE
I
C
= 500 mA, V
CE
= 1V
<
V
Saturation Voltage
V
CEsat
I
C
= 500 mA, I
B
= 50mA
<
mV
DC Current Gain
h
FE
I
C
= 500 mA, V
CE
= 1V
I
C
= 100 mA, V
CE
= 1V
>
-
Collector Capacitance
C
C
I
E
= I
E
= 0, V
CB
= 10V,
f = 1MHz
typ.
pF
Transition Frequency
f
T
I
C
= 10mA, V
CE
= 5V,
f =100MHz
>
MHz
100
700
40
100 to 600
5
Typ.
100
5
10
1, 2V
Electical Characteristics
(at Ta = 25
C unless otherwise specified)
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