CSA950
PNP Planar Epitaxial Transistor
Symbol
Ratings
Unit
Collector-Emmiter Voltage
V
CEO
30
V
Collector Base Voltage
V
CBO
35
V
Emitter Base Voltage
V
EBO
5
V
Collector current
I
C
800
mA
Emitter Current
I
E M
800
mA
Collector Power Dissipation
P
C
600
mW
Operating and Storage Junction
T
j
T
stg
-50 to +150
C
Temperature Range
Absolute Maximun Ratings (Ta=25
o
C)
TECHNICAL SPECIFICATION
RECTRON
SEMICONDUCTOR
1. BASE
2. EMITTER
3. COLLECTOR
DIM MIN MAX
A 4.32 5.33
B 4.45 5.2
C 3.18 4.19
D 0.41 0.50
E 0.35 0.50
F
5
q 5
q
G 1.14 1.40
H 1.14 1.53
K 12.70 -
TO-92
Characteristics Ratings
(at Ta = 25
C unless otherwise specified)
* Pulse Condition: Width < 300mS, Duty Cycle < 2%
Symbol
Test Conditions
min.
Typ.
max.
Unit
Collector Emitter Voltage
V
CEO
I
C
= 10mA, I
B
=0
30
V
Collector Cut off Current
I
CBO
V
C
= 35V, I
E
=0
0.1
A
Emitter Cut off Current
I
EBO
V
EB
= 5V, I
C
=0
0.1
A
DC Current Gain
h
FE (1)
V
CE
= 1V, I
C
= 100mA
100
320
h
FE (2)
V
CE
= 1V, I
C
= 700mA
35
Collector Emitter Saturation Voltage
V
CE (SAT)
* I
C
= 500mA, I
B
= 20mA
0.7
V
Base Emitter on Voltage
V
BE (on)
V
CE
= 5V, I
C
= 10mA
0.5
0.8
Transition Frequency
f
T
I
C
= 10mA, V
CE
=5V
120
MHz
Collector Output Capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MHz
19
pF
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