SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.09 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
EFMB101
THRU
EFMB106
DO-214AA
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
SUPER FAST SILICON RECTIFIER
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
1998-8
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 55
o
C
Peak Forward Surge Current I
FM
(surge): 8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps
1.0
30
15
-65 to + 175
Amps
pF
0
C
UNITS
EFMB101
EFMB104
EFMB102
EFMB105 EFMB106
EFMB103
50
200
100
300
400
150
35
140
70
210
280
105
50
200
100
300
400
150
10
at Rated DC Blocking Voltage
CHARACTERISTICS
Maximum Reverse Recovery Time (Note 1)
V
F
SYMBOL
I
R
trr
UNITS
0.95
5.0
uAmps
nSec
Maximum DC Reverse Current
Maximum Forward Voltage at 1.0A DC
Volts
@T
A
= 25
o
C
@T
A
=150
o
C
EFMB101
EFMB104
EFMB102
EFMB105 EFMB106
EFMB103
1.25
50
35
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