SINGLE-PHASE GLASS PASSIVATED
VOLTAGE RANGE 50 to 200 Volts CURRENT 0.5 Ampere
FEATURES
* Surge overload rating - 30 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 0.5 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
EMD1S
THRU
EMD4S
MINI SUPER FAST SURFACE MOUNT BRIDGE RECTIFIER
Dimensions in millimeters
MD-S
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
M D
1
2
3
4
.004(0.10) MAX.
0.028(0.9)
0.020(0.5)
0.106(2.7)
0.091(2.3)
0.193(4.9)
0.177(4.5)
0.157(4.0)
0.152(3.6)
0.014(0.35)
0.006(0.15)
0.157(4.0)
0.145(3.6)
2.756(7.0)
0.260(6.6)
0.108(2.74)
0.092(2.34)
0.193(4.9)
0.177(4.5)
MECHANICAL DATA
2002-4
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
V
F
SYMBOL
U N I T S
1.05
Maximum Forward Voltage Drop per Bridge Element at 0.5A DC
Volts
EMD1S
EMD3S
EMD4S
EMD2S
DC Blocking Voltage per element
I
R
0.5
m A m p s
uAmps
@T
A
= 25
o
C
@T
A
= 125
o
C
10
Maximum Reverse Current at rated
Maximum Reverse Recovery Time (Note 4)
trr
50
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05" (1.3 X 1.3mm) pads.
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25" (20 X 20 X 6.4mm) mounted on 0.05 X 0.05" (1.27 X 1.27mm) solder pad.
3. Suffix "-S" Surface Mount for Mini Dip Bridge.
nSec
4. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
SYMBOL
V
RRM
V
DC
I
O
I
FSM
V
RMS
Volts
Volts
Amp
0.5
20
U N I T S
Maximum Average Forward Output Rectified
Current at T
A
= 30
o
C - on glass-epoxy P.C.B. ( NOTE 1 )
- on aluminum substrate ( NOTE 2 )
50
150
200
100
35
105
140
70
Volts
Amps
EMD1S
EMD3S
EMD4S
EMD2S
50
150
200
100
0.8
Typical Junction Capacitance ( Note 5 )
C
J
15
pF
Operating and Storage Temperature Range
T
J,
T
STG
-55 to + 150
0
C
5. Measured at 1MHz and applied reverse voltage of 4.0 volts.
RECTRON
RATING AND CHARACTERISTIC CURVES ( EMD1S THRU EMD4S )
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
TJ = 25
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
10 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
1.0
0.5
0
25 50 75 100 125 150 175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01
40
0
20
60
80
100
120
140
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
35
30
25
20
15
10
5
0
1
2
5
10
20
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
FIG. 4 - TYPICAL INSTANTANEOUS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
0
.2
.4
.6
.8
1.0
1.2
1.4
.001
.01
.1
1.0
10
FORWARD CHARACTERISTICS
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
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