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Электронный компонент: FFM306

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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.24 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FFM301
THRU
FFM307
DO-214AB
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 3.0 Amperes
FAST RECOVERY SILICON RECTIFIER
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm
2
copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm
2
copper pads to each terminal.
4. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
Dimensions in inches and (millimeters)
2001-5
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
A
= 55
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Amps
3.0
200
50
-65 to + 175
0
C / W
pF
0
C
UNITS
Volts
Volts
Maximum Thermal Resistance
(Note 2) R
JL
FFM301
FFM303
FFM302
FFM304
FFM306
FFM305
FFM307
50
100
200
400
600
800
1000
50
100
200
400
600
800
1000
35
70
140
280
420
560
700
15
Volts
Amps
60
0
C / W
(Note 3) R
JA
CHARACTERISTICS
Maximum Reverse Recovery Time (Note 4)
V
F
SYMBOL
I
R
trr
1.3
50
300
uAmps
uAmps
nSec
Maximum Full Load Reverse Current,Full cycle Average at T
A
= 55
o
C
Maximum Forward Voltage at 3.0A DC
Volts
U N I T S
Maximum DC Reverse Current at
Rated DC Blocking Voltage
@T
A
= 25
o
C
@T
A
= 125
o
C
FFM301
FFM303
FFM302
FFM304
FFM306
FFM305
FFM307
10
150
250
500
uAmps
0.006 (0.152)
0.012 (0.305)
0.008 (0.203)
0.004 (0.102)
0.320 (8.13)
0.305 (7.75)
0.030 (0.76)
0.060 (1.52)
0.079 (2.06)
0.103 (2.62)
0.260 (6.60)
0.280 (7.11)
0.220 (5.59)
0.245 (6.22)
0.125 (3.17)
0.115 (2.92)
MECHANICAL DATA
RECTRON
RATING AND CHARACTERISTIC CURVES ( FFM301 THRU FFM307 )
JUNCTION CAPACITANCE, (pF)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
TJ = 25
FIG. 1 - TYPICAL FORWARD CURRENT
AVERAGE FORWARD CURRENT, (A)
AMBIENT TEMPERATURE, ( )
DERATING CURVE
5
4
3
2
1
0
0
25
50
75
100 125 150 175
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
TJ = 25
J
Pulse Width=300uS
1% Duty Cycle
20
10
3.0
1.0
0.3
0.1
.03
.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
PEAK FORWARD SURGE
NUMBER OF CYCLES AT 60Hz
SURGE CURRENT
CURRENT, (A)
8.3ms Single Half Sine-Wave
(JEDED Method)
200
100
50
30
20
10
1
5
10
50
100